Effective Polysulfide Rejection by Dipole‐Aligned BaTiO3 Coated Separator in Lithium–Sulfur Batteries

Although the exceptional theoretical specific capacity (1672 mAh g^?1) of elemental sulfur makes lithium–sulfur (Li–S) batteries attractive for upcoming rechargeable battery applications (e.g., electrical vehicles, drones, unmanned aerial vehicles, etc.), insufficient cycle lives of Li–S cells leave a substantial gap before their wide penetration into commercial markets. Among the key features that affect the cyclability, the shuttling process involving polysulfides (PS) dissolution is most fatal. In an effort to suppress this chronic PS shuttling, herein, a separator coated with poled BaTiO₃ or BTO particles is introduced. Permanent dipoles that are formed in the BTO particles upon the application of an electric field can effectively reject PS from passing through the separator via electrostatic repulsion, resulting in significantly improved cyclability, even when a simple mixture of elemental sulfur and conductive carbon is used as a sulfur cathode. The coating of BTO particles also considerably suppresses thermal shrinkage of the poly(ethylene) separator at high temperatures and thus enhances the safety of the cell adopting the given separator. The incorporation of poled particles can be universally applied to a wide range of rechargeable batteries (i.e., metal‐air batteries) that suffer from cross‐contamination of charged species between both electrodes.     

NBT-KBT-BT系弛豫铁电体的弥散相变研究

采用传统压电陶瓷固相合成法制得纯钙钛矿相的(1.002-5x)NBT-4xKBT-(x-0.002)BT(x=0.026,0.028,0.030,0.032,0.034)(简写为BNBKT100x)系弛豫铁电体。通过X-射线衍射(XRD)分析,当x=0.030时为三方、四方两相共存,为该体系的准同型相界。系列样品的介电温谱显示在室温到500℃之间存在两个介电反常峰,分别对应于陶瓷材料的铁电-反铁电-顺电相变。同时发现该系列样品显示出弛豫铁电体特性。并用成分起伏理论解释了这种弛豫弥散相变。     

High pass filter with above IC integrated SrTiO3 high K MIM capacitors

This paper describes realization and characterization of SrTiO₃ (STO) high K MIM capacitors above BiCMOS integrated circuit (IC). These capacitances are connected to IC and are used as coupling capacitors in order to realize a high pass filter. Surface capacitance achieved is 10 nF/mm² with capacitance value of 1.2 nF. The process for STO MIM fabrication does not exceed 400 °C, which is compatible with interconnections. Typical K and dielectric losses values obtained are, respectively 110% and 2%. Yield obtained reaches 83% for capacitors. A functional high pass filter using these STO capacitors was realized in this study. It exhibits a cut-off frequency at 6.5 kHz and a constant gain at higher frequencies of −1.3 dB.     

Tunable ferroelectric impedance matching networks and their impact on digital modulation system performance

In this paper the bit error rate performance and error vector magnitude of a tunable impedance matching network is analyzed assuming QPSK, 16-QAM and 64-QAM digital modulation schemes. The characterized tunable impedance matching network is based on barium–strontium–titanate ferroelectric thick-film varactors. Inherent dispersive behavior is subsumed into the forward transmission of the passive device. Due to this nonlinear phase response, in general to maximize the overall system performance, an agile tuning of the varactor values is demonstrated, taking into account the phase and group delay of s₂₁ parameter. Detailed signal simulation results based on measured data of a testbed are presented. The influence of varying matched impedances on the tuning behavior with different modulation bandwidths is discussed at a center frequency of 1.9 GHz.     

化学共沉淀工艺制备钛酸锶钡纳米粉体

以硝酸钡、硝酸锶、草酸和钛酸丁酯为原料,采用草酸盐共沉淀法制备草酸氧钛锶钡(BSTO,Ba0.6Sr0.4TiO(C2O4)2·4H2O)前躯体粉体,将该前躯体800℃煅烧4h得到钛酸锶钡(BST,Ba0.6Sr0.4TiO3)纳米粉体。用差热分析仪研究BSTO的热分解过程,用X射线衍射仪(XRD)和扫描电镜(SEM)研究钛酸锶钡粉体的相组成和微观形貌。结果表明:BSTO前驱体的热分解过程可以分为失去结晶水、草酸氧钛跟(TiO(C2O4)22-)分解和BST结晶化3个阶段;所制备的钛酸锶钡粉体为高纯立方晶相,粉体呈类球状,平均粒径约为100nm。     

BST-BSL体系的烧结行为和介电性能

采用草酸盐共沉淀工艺制备高反应活性Ba0.6Sr0.4TiO3(BST)粉体,添加适量的B2O3-SiO2-Li2O(BSL)为烧结助剂,采用传统陶瓷制备工艺制备BST-BSL复相陶瓷。用扫描电镜(SEM)和X射线衍射(XRD)分别研究BST-BSL的微观形貌和相组成,并测试BST-BSL的介电性能参数。结果表明:添加的少量B2O3-Li2O-SiO2在烧结过程中与BST主晶相发生复杂的化学反应,使BST的烧结温度由1 350℃降低到1 000℃以下;B2O3-Li2O-SiO2的添加大幅改善BST的介电常数温度稳定性,引入的非铁电第二相对BST铁电性的‘稀释作用’使BST-BSL的可调率降低,但由于烧结助剂的添加量少,使BST-BSL在1 kV/mm外加偏场下的可调率仍在5%以上。     

BaTiO3烧结陶瓷的微结构及介电性能研究

以超重力反应沉淀法制得的纳米BaTiO3为初始粉体,在不同温度烧结得到BaTiO3陶瓷。分别用SEM和阻抗分析仪测试陶瓷微结构和介电性能。结果表明：陶瓷微结构尤其晶粒尺寸对陶瓷介电性能影响极大;烧结温度低于1250℃时得到细晶粒陶瓷(d=300～400nm),表现出明显的低介电常数和相变弥散的特征;烧结温度达1250℃时得到陶瓷超出细晶粒陶瓷范围,烧结温度为1300℃时,得到陶瓷晶粒尺寸为3～4μm,室温介电性能优于粗晶粒陶瓷。     

微波烧结钛酸锶钡陶瓷材料的介电性能

采用碳酸盐固相合成法制备Ba0.6Sr0.4TiO3(BST)粉体,应用微波烧结技术将粉体烧结成陶瓷。对样品的介电性能进行了测试,研究分析了材料的介电性能,并与传统制备工艺获得的样品进行了性能对比。结果表明:微波烧结成瓷温度和时间较传统制备工艺大大降低,分别为1 300℃和30 min,可以获得晶粒尺寸5μm以下的BST陶瓷;材料的εr变化不大,但tanδ大幅降低。     

N掺杂和氧空位对PbTiO3电子结构和导电性的影响研究

用第一性原理计算了P型N掺杂PbTiO3的电子密度差分、能带结构和态密度,讨论了氧空位对N掺杂PbTiO3性能的影响。在PbTiO3中掺杂N杂质后,PbTiO3的价带向高能级发生移动,费米能级进入价带顶部,带隙变窄,N掺杂PbTiO3表现出典型的P型半导体性能。当N掺杂PbTiO3中含有氧空位时,导带发生下移,受主被完全补偿。计算结果与实验数据相吻合。     

RF磁控溅射制备钛酸锶钡BST纳米薄膜

钛酸锶钡(BST)薄膜作为一种高K介质材料在微电子和微机电系统等领域具有广阔的应用前景,人们已对BST薄膜的制备工艺技术和介电性能进行了大量的研究。BST纳米薄膜的制备工艺直接影响和决定着薄膜的介电性能(介电常数、漏电流密度、介电强度等)。对RF磁控反应溅射制备BST纳米薄膜的工艺技术进行了综述。从溅射靶的制备、溅射工艺参数的优化、热处理、薄膜组分的控制,及制备工艺对介电性能的影响等方面,对现有研究成果进行了较全面的总结。