TFT-LCD技术的研究进展与发展趋势

介绍了近年来世界ＴＦＴ ＬＣＤ技术的研究现状,论述了未来ＴＦＴ ＬＣＤ技术的发展趋势     

Back channel etch chemistry of advanced a-Si:H TFTs

We report on the effects of back channel etch depth and etchant chemistry on the electrical characteristics of inverted staggered advanced amorphous silicon thin-film transistors. We found that the optimum amorphous silicon film thickness in the channel is about 800-1100 Å. Three dry etch, HBr + Cl₂, C₂F₆, and CCl₂F₂ + O₂, and one wet etch, KOH, chemistries are used for the back channel etch processing. We established that dry etch can be used for the back channel etch of amorphous silicon transistor without degrading its electrical characteristics.     

有机聚合物太阳电池电极的表面性能研究

采用多种方法对有机聚合物电池的电极进行表面处理,在测量接触角的基础上,应用几何平均法计算了电极样品的表面能和极性度,研究了处理方法对电极表面润湿性能的影响。结果表明,电极表面性能与其处理方法密切相关,等离子处理具有最小的接触角、最大的表面能和极性度,有效增强了电极表面的润湿性能,这一结果对于优化电极/活性层的界面性质,改善有机聚合物太阳电池的光伏性能具有非常重要的作用。     

新型横向脉冲快放电S_2激光管的设计

针对放电型 S2 激光管的设计中始终未能很好解决电极可拆卸性及可靠性的难题 ,首次提出了一个以不锈钢材料作激光管管壳 ,借助于燕尾槽实现电极可拆卸的设计方案 ,从而为横向脉冲快放电型 S2 激光器实现激光振荡创造了条件。     

Interdigitated back‐contact heterojunction solar cell concept for liquid phase crystallized thin‐film silicon on glass

We present an interdigitated back‐contact silicon heterojunction system designed for liquid‐phase crystallized thin‐film (~10 µm) silicon on glass. The preparation of the interdigitated emitter (a‐Si:H(p)) and absorber (a‐Si:H(n)) contact layers relies on the etch selectivity of doped amorphous silicon layers in alkaline solutions. The etch rates of a‐Si:H(n) and a‐Si:H(p) in 0.6% NaOH were determined and interdigitated back‐contact silicon heterojunction solar cells with two different metallizations, namely Al and ITO/Ag electrodes, were evaluated regarding electrical and optical properties. An additional random pyramid texture on the back side provides short‐circuit current density (j_SC) of up to 30.3 mA/cm² using the ITO/Ag metallization. The maximum efficiency of 10.5% is mainly limited by a low of fill factor of 57%. However, the high j_SC, as well as V_OC values of 633 mV and pseudo‐fill factors of 77%, underline the high potential of this approach. Copyright © 2015 John Wiley & Sons, Ltd.     

双层反射膜空芯传能光纤

利用化学气相沉积法 ,在毛细石英管内沉积GeO2 Al双层反射膜结构 ,增加内表面膜的反射率 ,降低传输损耗 ,该光纤可传输功率大于 80W的连续CO2 激光     

Determination of Optical Constant and Thickness for Thin Film by Using Improved FTM

A new method to determine the optical constant and thickness of thin films is proposed. Based on the Fresnel＇s optical expression, the improved flexible tolerance method（FTM） is employed in the case of a digital model of thin film to fit the curve of measured reflectance spectrum. The simulation results show a satisfactory correlation of the optical constant with the thickness of the target film. By taking the influence of nonlinear condition into account as well as more direct and indirect limitation, the precision and value-searching efficiency have been improved. Furthermore, the problem of dimension degradation, which exists in “Downhill Simplex”, has been successfully avoided. No initial input is needed for the procedure of optimization to achieve optical solution, which makes the whole processing of value calculation much more convenient and efficient.     

ZnO薄膜材料的发光特性

回顾了最近几年对 Zn O薄膜材料发光特性的研究进展 ,介绍了用不同方法制备 Zn O薄膜的自发辐射和受激辐射发光特性。     

Amorphous Ta-nanocrystalline RuOx diffusion barrier for lower electrode of high density memory devices

The effects of the amount of RuO₂ added in the Ta film on the electrical properties of a Ta-RuO₂ diffusion barrier were investigated using n⁺⁺-poly-Si substrate at a temperature range of 650–800°C. For the Ta layer prepared without RuO₂ addition, Ta₂O₅ phase formed after annealing at 650°C by reaction between Ta and external oxygen, leading to a higher total resistance and a non-linear I-V curve. Meanwhile, in the case of the Ta film being deposited with RuO₂ incorporation, not only a lower total resistance and ohmic characteristics exhibited, but also the bottom electrode structure was retained up to 800°C, attributing to the formation of a conductive RuO₂ crystalline phase in the barrier film by reaction with the indiffused oxygen because of a Ta amorphous structure formed by chemially strong Ta-O or Ta-Ru-O bonds and a large amount of conductive RuO₂ added. Since a kinetic barrier for nucleation in formation of the crystalline Ta₂O₅ phase from an amorphous Ta(O) phase is much higher than that of crystalline RuO₂ phase from nanocrystalline RuO_x phase, the formation of the RuO₂ phase by reaction between the indiffused oxygen and the RuO_x nanocrystallites is kinetically more favorable than that of Ta₂O₅ phase.     

Fabrication of organic thin film transistors on Polyethylene Terephthalate (PET) fabric substrates

In this paper organic thin film transistors (OTFTs) are directly fabricated on fabric substrates consisting of Polyethylene Terephthalate (PET) fibers. A key process is coating the polymer layers on the fabric in order to reduce the large surface roughness of the fabric substrate. Two polymers, i.e. polyurethane (PU) and photo-acryl (PA), are used to reduce the large surface roughness and simultaneously improve the process compatibility of the layers with the subsequent OTFTs processes while also retaining the original flexibility of the fabric. The surface roughness of the PU/PA-coated fabric is significantly reduced to 0.3 μm. Furthermore, the original flexibility of the PET fabric remained after coating of the PU/PA polymer layers. The mobility of the OTFTs fabricated on the PU-PA coated fabric substrate is 0.05 ± 0.02 cm²/V s when three PA layers and 90 nm thick pentacene layer were used. The performance does not vary even after 30,000 bending test.