Modification of Boundary Parameters and Fluctuations by IBW and LHCD in the HT-7 Tokamak

Measurements of boundary parameters and their fluctuations have been performed in ohmic (OH) plasma and Ion Bernstein Wave (IBW) and Lower Hybrid Current Drive (LHCD) enhanced confinement plasma using a pneumatically driven Langmuir probe array on HT-7 toka-maX. In the enhanced confinement plasma~ the gradients of electron density and temperature become higher and a transport barrier comes into being in the vicinity of the limiter. The boundary potential shows a clear modification in the same region. The fluctuation levels are significantly depressed and the coherences between fluctuations are reduced evidently in the enhanced plasma.Meanwhile, we obtained the spectral features and the poloidal phase velocity of fluctuations us-ing a two-point correlation technique and found obvious modifications of the turbulence and the poloidal flow. The results suggest that the improved confinement in the IBW and LHCD enhanced plasma is at least partially due to the modification of the boundary parameters and the suppression of the boundary fluctuations and fluctuation induced fluxes.     

一级除盐系统再生酸碱用量调整与探讨

论述了该厂300MW机组火电厂化学水处理一级除盐设备再生的酸碱用量调整试验的基本过程，并对一级除盐设备运行提出了相应的措施，调整试验达到节约酸碱用量、降低生产成本的目的。     

湿法磷酸脱硫（SO4^2—）净化研究

针对云南湿法磷酸进行了脱除硫酸根的实验研究，考察了沉淀剂用量，反应时间及温度等因素对硫酸根去除率的影响     

高流速双室床节水效果评价

高流速双室床(HDCB)是我国自主开发的一项水处理新技术。陕西某热电厂1年多的运行结果表明,其自用水率仅为3.2%,远低于反渗透(33%)及其他离子交换技术(10%)。HDCB自用水率低是由其结构及运行特性决定的,它具有周期制水量大,再生步骤少,再生过程用水量少,大反洗(清洗)次数少等特性,是目前化学水处理技术中节水效果最好的一种技术。     

链状纳米碳酸钙的制备

用间歇鼓泡碳化法制备了链状纳米CaCO3,用pH计和电导仪对碳化反应跟踪检测 ,对其形成机理进行了分析 ,实现了对链状CaCO3的粒度控制。考察了碳化反应过程中pH值、电导率和反应物质量分数、反应温度、CO2 气体流等因素对产品粒径和形态的影响。结果表明 ,碳化反应过程中 pH值和电导率都有一个快速下降阶段。其中电导率有两个下降回复过程。Ca(OH) 2 质量分数、CO2 流量的增大、反应温度升高都会使反应速率和晶核生长速率变大。反应温度控制在 30℃左右 ,Ca(OH) 2 质量分数为 1 0 %左右 ,在一定范围内CO2 流量越大所得晶体结构越好     

全钒液流电池隔膜在钒溶液中的性能

考察了Nafion、日-160、日-80、FYM(日本产Nafion膜)和均相膜5种离子交换膜的两个关键性能(渗透性和面电阻)及其影响因素,对均相膜的化学稳定性进行了初步研究,并对两种膜进行了改性。实验发现:均相膜的钒扩散系数最小,但面电阻较大,化学稳定性不好;用二乙烯苯(DVB)对均相膜改性,综合性能较好;减小电场可降低钒离子扩散,提高钒溶液中氢离子浓度可减小面电阻。     

Effect of Ion Dose on Growth of Relaxed SiGe Layer on Ion Implantation Si Substrate

Thin strain-relaxed Si0.8Ge0.2 films (57.6 nm) on the 30 keV Ar ion implantation Si substrates for different dose (1 × 1014, 5 × 1014, 3 × 1015 cm-2) were grown by ultra high vacuum chemical vapor deposition (UHVCVD) system.Rutherford backscattering/ion channeling (RBS/C), high resolution X-ray diffraction (HRXRD), Raman spectra as well as atomic force microscopy (AFM) were used to characterize these SiGe films. Investigations by RBS/C as well as HRXRD demonstrate that these thin Sio.8Geo.2 films could indeed epitaxially grow on the Ar ion implantation Si substrates. Under low dose ( 1 × 1014 cm-2) and medium dose (5 × 1014 cm-2) implantation conditions, the relaxation extents of SiGe films are 60.6% and 63.6%, respectively. However, high dose implantation (3 × 1015 cm-2) prompt the strain in epitaxial SiGe film to be close to full relaxation status (relaxation extent of 96.6% ). On the other hand, determinations of RBS/C also indicate the crystalline quality of SiGe film grown on high dose implantation Si substrate is nearly identical to that grown on low dose (1 × 1014 cm-2) implantation Si substrate.     

4A和13X分子筛去除水中重金属Cd2＋及其吸附性能研究

以4A和13X分子筛为吸附材料,考察废水pH值和Cd2＋初始浓度等对Cd2＋去除率的影响,并研究了分子筛对Cd2＋的吸附性能。结果表明,4A和13X分子筛投加量为0．16 g/L、废水pH值为5、Cd2＋浓度为20 mg/L时,Cd2＋去除率达到95％以上;分子筛对Cd2＋的去除机理以离子交换吸附为主,交换出来的Na＋与分子筛吸附的Cd2＋摩尔浓度比为2;在吸附热力学和动力学方面,4A和13X分子筛均符合Langmuir吸附等温模型和Lagergren二级速率方程,计算的饱和吸附容量 Q0分别为150．15、163．67 mg/g ,二级反应速率常数K2分别为2．45＆#215;10-3、3．96＆#215;10-4 g/（mg ＆#183; s）。该吸附反应是一种单分子层反应速度较快的化学吸附过程。     

苛性碱分解高钙黑钨精矿试验研究

研究了在高温，高压（Ｔ＝１８０℃，ｐ＝１．０～１．２×１０＾６Ｐａ）的加磷酸盐情况下，苛性碱分解高钙黑钨精矿的工艺，试验表明，高钙钨精矿的分解率（η）可达９８％以上，钨酸钠溶液中Ｐ／Ｗ比值也能满足工艺要求，与常温，常压工艺相比苛性碱的用量降低，分解时间缩短。     

直读式测钙仪电计电位校准方法研究

介绍了直读式测钙仪电计电位的校准方法,包括电计电位示值误差和重复性测量方法,以及对仪器电计电位示值误差测量不确定度的评定等。