玻璃工业中的计算机应用

本文对国内外微机在玻璃工业中的应用现状进行了综述与评价 ,主要讨论微机应用对玻璃工业的影响 ,并初步探讨了玻璃工业中微机应用的前景     

TiB2与BN复相陶瓷的渗流模型

试验结果证实,TiB₂与BN复相陶瓷的导电性能符合渗流理论,原料粉粒度配比下,其渗流阀值为V_c%=22.9%;原料粉粒度比的改变将改变渗流阀值,从而改变各配比下的电阻率值;TiB₂与BN在SPS系统中快速烧结,晶粒的尺度比与原料粉的粒度比基本保持一致。     

工艺条件对薄片陶瓷材料凝胶流延成型的影响

利用有机单体的聚合原理，成功进行了陶瓷薄片材料的凝胶流延成型。讨论了工艺条件对成型的影响。使用惰性气氛保护克服了单体聚合反应中的氧气阻聚问题，浆料在一定温度和气氛条件下能够顺利完成聚合反应。所成型的坯体具有良好的强度和柔韧性，在1550℃经2h烧结，烧结样品显微结构均匀，没有发现晶粒异常长大现象，烧结体致密度达到97．7％。     

金属PTC陶瓷复合材料结构及其导电机理

研究了金属ＰＴＣ陶瓷复合材料的电学性能和其材料组分。结果表明，掺入金属的ＰＴＣ陶瓷材料经氮气中烧结，然后在空气中进行热处理，材料表面形成高势垒层，金属ＰＴＣ陶瓷复合材料的室温电阻较ＰＴＣ的陶瓷高。样品之中存在大量不同类型的极化，在低温时样品电阻较高，温度增加后，大量各种类型离子极化出现，在变价金属铁的变价导电作用下，削弱表面势垒，使金属ＰＴＣ陶瓷复合材料电阻降低，表现出ＮＴＣ现象。在电场作用下，正负电荷、晶粒畸变和空位缺陷等产生空间电荷极化使金属ＰＴＣ陶瓷复合材料有较高介电常数。介电损耗（ｔｇδ）频谱和介电δ温度谱上都出现一个介电峰，其主要原因是跃迁极化，金属阳离子由一个位置跃迁到另一个位置，在介电损耗所对应的频率和温度时出现跃迁极化率最大     

热释电系数的测量方法

描述热释电系数的两种测量方法。其一为电荷积分法，测试系统简单，测量数据准确，且能满足零电场条件下的测量。其二为动态电流法，采用调制热源技术，研究在特定温度条件下热释电材料的动态热释电响应。     

电致伸缩陶瓷微位移器非线性的数值方法补偿

本文通过对电致伸缩陶瓷材料的非线性进行分析。找到了补偿电致伸缩陶瓷非线性的数值方法，并对不同回程大小的电滞回线进行了分段处理，使补偿结果更为精确。     

Sol-gel processing: A versatile concept for special glasses and ceramics

The various parameters related to sol-gel processing are discussed with special reference to those which usually attract less attention but depending on the final product in mind, can play important roles. The versatility of the sol-gel technique in materials preparation is demonstrated by discussing the various products developed at the author’s laboratory by using this processing method.     

改性玻纤增强尼龙610,1010塑料

研究了采用(准)中粘度级尼龙做基体树脂,加入成核剂改善尼龙的结晶过程,提高结晶速率和初始熔融温度;添加光、热氧稳定剂,防止尼龙在成型加工和使用过程中产生降解与老化,提高塑料制品的质量和减少性能的分散性;采用合理的工艺条件,确保添加剂的均匀分散与减少玻纤的磨损,得到适于军工、航空和机电等领域需要的高性能的受力结构工程塑料。     

Application of SiC-Si functionally gradient material to thermoelectric energy conversion device

Because of its high–temperature chemical stability, SiC ceramic is a promising material for high-temperature device applications such as thermoelectric energy converters. However, the electrical conductivity of SiC ceramic is too low for it to be used as a thermoelectric energy converter at the cold junction. Therefore, we propose a SiC-Si functionally gradient material (FGM) in order to improve the electrical conductivity of the SiC ceramic at the cold junction. An SiC rod was fired in a temperature gradient furnace. One end of the SiC rod was maintained at 2473 K and the other end was maintained at 1973 K for 30 min. After firing, the porous SiC edge fired at 1973 K was dipped into molten Si in order to infiltrate molten Si into the porous SiC. The microstructure of the FGM is classified into three regions: the SiC-Si composite material; the porous SiC ceramic; and the densified SiC ceramic. The electrical conductivity, the Seebeck coefficient and the thermal conductivity for each region of SiC-Si FGM was measured at 300 K; a figure of merit was calculated. The figure of merit of the SiC-Si FGM at the cold junction, at room temperature, was 10⁸ times higher than that of a nongradient SiC ceramic.     

工业化陶瓷超滤膜的表征

以液-液排除法测定工业化陶瓷超滤膜的孔径及孔径分布，比较了两种渗透体系对测定结果的影响；用已知分子量标准物质考察了不同膜的截留行为，获得了各膜的切割分子量值，并分析了截留率与孔径的对应关系，为工业化陶瓷膜的开发提供依据。