有机高分子磁性材料研究进展

有机高分子磁性材料作为一种新型的功能材料,在超高频装置、高密度存贮材料、吸波材料和微电子工业等需要轻质磁性材料的领域具有很好的应用前景。室温稳定且具有实用价值的有机高分子磁性材料一直是该领域研究的热点。文中概述了纯有机类,大π键体系类,电荷转移复合物类和含金属原子复合物类等有机高分子磁性材料的最新研究进展,并介绍了各类有机高分子磁性材料的磁性能特点。     

配体-金属电子转移强化类芬顿技术的破络特性与机制

为有效分解近中性废水中典型难降解强络合物Ni-EDTA,构建配体-金属电子转移强化类芬顿技术（LFGR）,基于Ni(Ⅱ)去除效能等系统分析其在近中性条件下对Ni-EDTA的破络特性,重点探究Fe(Ⅲ)与H₂O₂投加量、pH值、浊度、常见有机酸与常规无机盐对LFGR破络特性的影响。结合H₂O₂消耗观测、自由基淬灭实验、自由基信号检测与降解产物分析等科学识别LFGR体系中主要活性氧物种,并进一步剖析Ni-EDTA的破络过程与主导机制。定量比较分析LFGR与其他UV活化氧化技术去除多种重金属EDTA络合物（M-EDTA）的特性,并进一步阐明LFGR的运行成本优势。对于络合物浓度为1.0 mmol/L的近中性模拟废水,LFGR的优化反应条件为：Fe(Ⅲ)投加量为0.1 mmol/L,H₂O₂投加量为50 mmol/L,UV光照时间为20 min。该条件下,EDTA可完全转化,且经碱沉淀后Ni(Ⅱ)去除率可高达99.40%;LFGR对水中常见有机酸与常规无机盐呈现出良好的抗干扰性;H₂O₂主要通过与配体-金属电子转移产生的Fe(Ⅱ)发生类芬顿反应消耗;LFGR的主要作用过程是Fe(Ⅲ)置换Ni(Ⅱ)并激发配体-金属电子转移反应从而促进EDTA光解,UV进一步驱动Fe(Ⅲ)还原并加快Fe物种循环,进而强化类芬顿技术活性氧自由基（主要为·OH和·O₂^-）的催化作用。LFGR可在近中性条件下实现多种M-EDTA的良好破络效果,水处理费用合计为4.21元/t,具有良好技术经济性。     

有机电荷转移络合物的研究方法及其发展趋势

从电荷转移络合物的生成测定、组成测定及其热力学常数测定等几方面综述了目前研究有机电荷转移络合物的光谱方法，包括紫外及可见光分光光度法、核磁共振法、红外光谱法及Ｘ射线光电子能谱法等；并对有机电荷转移络合物方法的发展趋势作了评述。     

2—乙烯基萘／反丁烯二腈光照下共聚合

2-乙烯基萘与反丁烯二腈可以在365nm光照下共聚合,生成1:1交替共聚物。研究了聚合反应的引发机理,认为通过二者的基态电荷转移复合物受光激发和2-乙烯基萘的定域激发形成激发态复合物,其进一步反应生成1,4-双自由基,引发链增长。     

Alkali Metal Cations as Charge-Transfer Bridge for Polarization Promoted Solar-to-H2 Conversion

Utilization of spontaneous polarization electric field of ferroelectric materials to realize the spatial separation and fast transfer of photogenerated charges has been regarded as a promising strategy to fabricate highly efficient photocatalysts. Herein, a novel heterostructure is constructed by coupling potassium poly(heptazine imide) (K-PHI) with ferroelectric Ba_xSr_1-xTiO₃ (B_xST) through a facile electrostatic self-assembly strategy. The ionic species of K-PHI can neutralize the polarized charges in B_xST to form intimate interfacial contact, substantially boosting the internal electric field. Notably, K⁺ cations intercalated into K-PHI act as charge-transfer bridge to promote migration and separation of photogenerated charge carriers. As a result, a significantly improved H₂-evolution rate of 1087.4 µmol h⁻¹ g⁻¹ with an apparent quantum yield (AQY) of 8.05% at 420 nm is achieved over 5% K-PHI/B_0.8ST, standing among the best polymeric carbon nitride-based photocatalysts reported up to date. Moreover, the extreme stability of the catalysts is evidenced by remaining outstanding catalytic performance even after storage for half a year. This strategy can be extended to other alkali metal (Na⁺ and Cs⁺) modified polymeric materials, highlighting the key role of the bridging ions in constructing polarized heterostructure, which sheds light on the design of ferroelectric-assisted photocatalysts.     

Cache Memory Design for Single Bit Architecture with Different SenseAmplifiers

Most modern microprocessors have one or two levels of on-chip caches to make things run faster, but this is not always the case. Most of the time, these caches are made of static random access memory cells. They take up a lot of space on the chip and use a lot of electricity. A lot of the time, low power is more important than several aspects. This is true for phones and tablets. Cache memory design for single bit architecture consists of six transistors static random access memory cell, a circuit of write driver, and sense amplifiers (such as voltage differential sense amplifier, current differential sense amplifier, charge transfer differential sense amplifier, voltage latch sense amplifier, and current latch sense amplifier, all of which are compared on different resistance values in terms of a number of transistors, delay in sensing and consumption of power. The conclusion arises that single bit six transistor static random access memory cell voltage differential sense amplifier architecture consumes 11.34 μW of power which shows that power is reduced up to 83%, 77.75% reduction in the case of the current differential sense amplifier, 39.62% in case of charge transfer differential sense amplifier and 50% in case of voltage latch sense amplifier when compared to existing latch sense amplifier architecture. Furthermore, power reduction techniques are applied over different blocks of cache memory architecture to optimize energy. The single-bit six transistors static random access memory cell with forced tack technique and voltage differential sense amplifier with dual sleep technique consumes 8.078 μW of power, i.e., reduce 28% more power that makes single bit six transistor static random access memory cell with forced tack technique and voltage differential sense amplifier with dual sleep technique more energy efficient.     

Some Novel Features of the Oxidative Polymerization of N-Vinylcarbazole by Vanadium (V) Ion in Aqueous Medium

Oxidative polymerization of N-vinylcarbazole (NVC) was achieved in an aqueous suspension by vanadium (V) ion as the oxidant. Formation of polyN-vinylcarbazole (PNVC) was confirmed by Fourier transformed infrared (FTIR) spectroscopic analyses. Scanning electron microscopic (SEM) analyses of PNVC showed distinctive morphological pattern. Thermogravimetric stability studies (TGA/DTA) revealed that PNVC underwent about 60% weight loss up to 1,000°C temperature and suggested the formation of a structure different from that of conventional PNVC homopolymer soluble in solvents. PNVC obtained from the present study of NVC-V^V polymerization system was found to be intractable in nature and confirmed to be due to the formation of a cross-linked polymer structure. A possible pathway for the polymerization of NVC is via coupling of aromatic rings vis-à-vis in situ formation of cross-linked PNVC (CLPNVC) has been proposed.     

线性羧酸酯对锰酸锂-石墨电池低温性能的影响(英文)

以线性羧酸酯EA、EP和EB分别替代工业用1.0 mol/L LiPF6 EC/EMC/DMC(1:1:1,质量比)电解液中的DMC,配制了1.0 mol/L LiPF6 EC/EMC/EA(1:1:2,质量比)、1.0 mol/L LiPF6 EC/EMC/EP(1:1:2,质量比)和1.0mol/L Li PF6 EC/EMC/EB(1:1:2,质量比)3种包含线性羧酸酯的电解液,采用18650全电池研究线性羧酸酯作为电解液溶剂组元对锰酸锂-石墨电池低温性能的影响。结果表明,采用3种包含线性羧酸酯的电解液,电池在-20°C、5C倍率下放电容量保持率均大于93%,而采用工业用电解液时,电池无法在-20°C、5C倍率下放电。电化学阻抗谱分析表明,在低温下电池放电容量和放电能量衰减的主要原因是电荷转移阻抗随温度的降低而增大。在3种含线性羧酸酯的电解液中,使用1.0 mol/L LiPF6 EC/EMC/EA(1:1:2,质量比)电解液的电池因具有最低的电荷转移阻抗,表现出最好的电化学性能,在-40°C下放电容量保持率大于90%,在-60°C下放电容量保持率大于44.41%。     

基于触摸传感器QT1101的触摸屏设计

QT1101是QTouch电荷转移(QT)器件,是一款完整的数字控制器,能检测到接近或触摸多达10个独立按键时的信号,可广泛应用于MP3播放器、移动式电话、PC外围设备、电视机控制、定点设备、远距离控制等领域.详细介绍了QT1101的原理及其在触摸屏中的应用.