Controlling Chiral Spin States of a Triangular‐Lattice Magnet by Cooling in a Magnetic Field

Magnetic materials with a non‐collinear and non‐coplanar arrangement of magnetic moments hosting a nonzero scalar spin‐chirality exhibit unique magnetic and spin‐dependent electronic transport properties. The spin chirality often occurs in materials where competing exchange interactions lead to geometrical frustrations between magnetic moments and to a strong coupling between the crystal lattice and the magnetic structure. These characteristics are particularly strong in Mn‐based antiperovskites where the interactions and chirality can be tuned by substitutional modifications of the crystalline lattice. This study presents evidence for the formation of two unequal chiral spin states in magnetically ordered Mn_3.338Ni_0.651N antiperovskite based on density functional theory calculations and supported by magnetization measurements after cooling in a magnetic field. The existence of two scalar spin‐chiralities of opposite sign and different magnitude is demonstrated by a vertical shift of the magnetic‐field dependent magnetization and Hall effect at low fields and from an asymmetrical magnetoresistivity when the applied magnetic field is oriented parallel or antiparallel to the direction of the cooling field. This opens up the possibility of manipulating the spin chirality for potential use in the emerging field of chiral spintronics.     

Si基有机异质结势垒特性的研究

在电阻率为０．２Ω．ｃｍ的ｐ－Ｓｉ衬底上沉积了厚度为２０ｎｍ的有机半导体材料四甲酸二酐（ＰＴＣＤＡ）薄膜,由此形成有机／无机异质结。从它们的能带结构出发,通过实验测试分析了这种有机／无机半导体异质结（ＯＩＨＪ）的电容－电压及电流－电压特性。     

Temperature dependent of the current–voltage (I–V) characteristics of TaSi2/n-Si structure

Tantalum silicide (TaSi₂) thin films were deposited on n-type silicon single crystal substrates using a dual electron-gun system and with Ta and Si targets. The electrical transport properties of the TaSi₂/n-Si structures were investigated by temperature-dependent current–voltage (I–V) measurements. The temperature-dependent I–V characteristics revealed that the forward conduction was determined by thermionic-emission and space-charge-limited current mechanisms at low and high voltage respectively. On the other hand, the reverse current is limited by the carrier generation process.     

Intermetallic reactions in reflowed and aged Sn-9Zn solder ball grid array packages with Au/Ni/Cu and Ag/Cu pads

During the reflowing of Sn-9Zn solder ball grid array (BGA) packages with Au/Ni/Cu and Ag/Cu pads, the surface-finished Au and Ag film dissolved rapidly and reacted with the Sn-9Zn solder to form a γ₃-AuZn₄/γ-Au₇Zn₁₈ intermetallic double layer and ε-AgZn₆ intermetallic scallops, respectively. The growth of γ₃-AuZn₄ is prompted by further aging at 100°C through the reaction of γ-Au₇Zn₁₈ with the Zn atoms dissolved from the Zn-rich precipitates embedded in the β-Sn matrix of Sn-9Zn solder BGA with Au/Ni/Cu pads. No intermetallic compounds can be observed at the solder/pad interface of the Sn-9Zn BGA specimens aged at 100°C. However, after aging at 150°C, a Ni₄Zn₂₁ intermetallic layer is formed at the interface between Sn-9Zn solder and Ni/Cu pads. Aging the immersion Ag packages at 100°C and 150°C caused a γ-Cu₅Zn₈ intermetallic layer to appear between ε-AgZn₆ intermetallics and the Cu pad. The scallop-shaped ε-AgZn₆ intermetallics were found to detach from the γ-Cu₅Zn₈ layer and float into the solder ball. Accompanied with the intermetallic reactions during the aging process of reflowed Sn-9Zn solder BGA packages with Au/Ni/Cu and Ag/Cu pads, their ball shear strengths degrade from 8.6 N and 4.8 N to about 7.2 N and 2.9 N, respectively.     

Intermetallic formation in Sn3Ag0.5Cu and Sn3Ag0.5Cu0.06Ni0.01Ge solder BGA packages with immersion Ag surface finish

The intermetallic compounds formed in Sn3Ag0.5Cu and Sn3Ag0.5Cu0.06Ni0.01Ge solder BGA packages with Ag/Cu pads are investigated. After reflow, scallop-shaped η-Cu₆Sn₅ and continuous planar η-(cu_0.9Ni_0.1)₆Sn₅ intermetallics appear at the interfaces of the Sn3Ag0.5Cu and Sn3Ag0.5Cu0.06Ni0.01Ge solder joints, respectively. In the case of the Sn3Ag0.5Cu specimens, an additional ε-Cu₃Sn intermetallic layer is formed at the interface between the η-Cu₆Sn₅ and Cu pads after aging at 150°C, while the same type of intermetallic formation is inhibited in the Sn3Ag0.5Cu0.06Ni0.01Ge packages. In addition, the coarsening of Ag₃Sn precipitates also abates in the solder matrix of the Sn3Ag0.5Cu0.06Ni0.01Ge packages, which results in a slightly higher ball shear strength for the specimens.     

Synthesis,Properties, and Photopolymerization of Liquid‐Crystalline Oxetanes: Application in Transflective Liquid‐Crystal Displays

Mixtures of liquid‐crystalline di‐oxetanes and mono‐oxetanes are made for the purpose of making birefringent films by photopolymerization. The composition of a di‐oxetane mixture that forms spin‐coated films of planarly aligned nematic monomers is reported. These films are photopolymerized in air. The molecular order of the monomers can be changed on the microscale to form thin films with alternating birefringent and isotropic parts by using a combination of photopolymerization and heating. The interface observed between the birefringent and isotropic 10 μm × 10 μm domains is very sharp and the films show hardly any surface corrugation. In addition, the polymerized films are thermally stable, making them very suitable for use as patterned thin‐film retarders in high‐performance transflective liquid‐crystal displays (LCDs) which satisfy customer demand for displays that are brighter and thinner and that deliver better optical performance than conventional LCDs with an external non‐patterned retarder.     

填充旋波媒质矩形波导电磁场的解析求解

提出了一种获得填充旋波媒质矩形波导电磁场解析解的新方法.从旋波媒质本构方程和麦克斯韦方程出发,讨论了电磁波在旋波媒质中的传播特性.经过矢量变换,将难以解析求解的波动方程化简为常规的波动方程,并对其进行了求解.利用矢量变换关系和场矢量的边界条件,求得了电磁场分量表达式和求解传播常数的特征方程组.     

An investigation on hydride VPE growth and properties of semi-insulating InP:Fe

Growth of highly resistive semi-insulating InP : Fe has been achieved by the Hydride VPE technique in an ambient consisting mostly of nitrogen. After dealing with some thermodynamic considerations pertinent to InP:Fe growth, the experimental growth parameters are described. It is shown that various amounts of iron can be introduced into the InP crystal just by varying the temperature of the iron source. The crystal quality of the grown material is estimated to be good by etch pit density and x-ray diffraction analyses. Current-voltage behaviour and capacitance studies on ann ⁺-SI-n ⁺ structure are explained by invoking the theory of current injection in solids by Lampert and Mark: the experimental current densities at the threshold of each observed regime are compared with the theoretically derived current densities; in the absence of current injection, the measured capacitance is found to be the same as the geometrical capacitance.     

The stability of α-Sn grown on CdTe by molecular beam epitaxy

We have examined the effect of the substrate orientation, thickness, growth rate, substrate temperature and inclusion of small amounts of Ge on the transition temperature of α-Sn films grown on CdTe. The transition temperature from α-Sn to β-Sn was determined by optical microscopy to be as high as 132° C. CdTe(ll0) is a somewhat better orientation than CdTe(100), and CdTe(lll)B appears to be totally unacceptable. The transition temperature from α-Sn to β-Sn depends on the film thickness; thinner films have a somewhat higher transition temperature than thicker films. The film quality can be increased by lowering the growth rate and raising the growth temperature to about 75° C. Since the transition from α-Sn to β-Sn starts at defects in the film, improving the film quality by lowering the growth rate and raising the growth temperature raises the transition temperature. Also by adding small amounts of Ge (∼2%) the transition temperature of films grown on CdTe can be significantly increased.     

Hydrated Bi-Ti-Bimetal Ethylene Glycol: A New High-Capacity and Stable Anode Material for Potassium-Ion Batteries

Potassium-ion batteries have emerged not only as low-cost alternatives to lithium-ion batteries, but also as high-voltage energy storage systems. However, their development is still encumbered by the scarcity of high-performance electrode materials that can endure successive potassium-ion uptake. Herein, a hydrated Bi-Ti bimetallic ethylene glycol (H-Bi-Ti-EG) compound is reported as a new high-capacity and stable anode material for potassium storage. H-Bi-Ti-EG possesses a long-range disordered layered framework, which helps to facilitate electrolyte ingress into the entire Bi nanoparticles. A suite of spectroscopic analyses reveals the in situ formation Bi nanoparticles within the organic polymer matrix, which can alleviate stresses caused by the huge volume expansion/contraction during deep cycles, thereby maintaining the superior structural integrity of H-Bi-Ti-EG organic anode. As expected, H-Bi-Ti-EG anode exhibits a high capacity and superior long-term cycling stability. Importantly for potassium storage, it can be cycled at current densities of 0.1, 0.5, 1, and 2 Ag⁻¹ for 800, 700, 1000, and even 6000 cycles, retaining charging capacities of 361, 206, 185, and 85.8 mAh g⁻¹, respectively. The scalable synthetic method along with the outstanding electrochemical performance of hydrated Bi-Ti-EG, which is superior to other reported Bi-based anode materials, places it as a promising anode material for high-performance potassium storage.