Analysis of adhesive bonded composite lap joints with transverse stitching

The effect of transverse stitching on the stresses in the adhesive is investigated using an adhesive sandwich model with nonlinear adhesive properties and a transverse stitching model for adhesive bonded composite single-lap and double-lap joints. Numerical results indicate that, among all stitching parameters, thread pretension and stitch density have significant effect on the peel stresses in the adhesive; increase in the thread pretension and the stitch density leads to a decrease in peel stress in the adhesive, while an increase in other parameters generally results in a negligible reduction in peel stress. The effect of stitching was found to be negligible on the shear stresses in the adhesive. Thus it is concluded that stitching is effective for the joints where peel stresses are critical and ineffective for those where shear stresses are critical.     

山西塔儿山地区金成矿的构造控制因素

本文通过分析晋南塔儿山地区的构造特征，探讨了该区金成矿作用的构造控制因素。     

ANALYSIS ON ROOM TEMPERATURE TENSILE STRENGTH OF δ-Al_2O_3, FIBER / Al-12Si COMPOSITE

对δ－Ａｌ２Ｏ３纤维／Ａｌ－１２Ｓｉ复合材料室温拉伸强度的分析表明，在实验条件下该复合材料存在δ－Ａｌ２Ｏ３纤维的最小体积分数Ｖｍｉｎ和临界体积分数Ｖｃｒｉｔ，并求出其基体强度δｍ和室温强度σｃ－δ－Ａｌ２Ｏ３纤维体积分数Ｖｆ直线方程及纤维的临界长度ｌｃ和复合材料的剪切应力τＰ确定复合材料的ＲＯＭ预测曲线，应首先判断σｍ是否等于未增强合金的强度σｕｍ才能得出正确的结论。     

用于多种组装技术的厚膜导体复合结构

厚膜导体Ｐｄ－Ａｇ／Ａｕ、Ｐｔ－Ｐｄ－Ａｕ／Ａｕ平面复合结构，Ｐｄ－Ａｇ／Ａｕ立体复合结构可使多种组装技术相互兼容。立体复合结构还可有效地降低导体线电阻，减少线损耗。而且，其超声键合性尤佳     

Use of inverse gas chromatography to quantify interactions in amine cured epoxy resins

Flory–Huggins interaction parameters, λ, were determined for a series of probes in an amine cured epoxy resin matrix (433–493 K) and its precursors (324–363 K) by inverse gas chromatography (IGC). Hildebrand–Scatchard theory was combined with Flory–Huggins theory in order to estimate infinte dilution solubility parameters (δ₂) for the matrix and its precursors at 298 K. It was shown that the value of the solubility parameter for the cured resin matrix lies between those of its precursors. Compared to the majority of published work, an unusual aspect of this application of IGC is that solubility parameters have been determined when the stationery phases are (i) small molecules and (ii) a highly crosslinked polymer. Moreover, all possible attempts have been made to ensure equilibrium conditions between probe and stationary phase, and compensation for asymmetry of peak profile has been applied in determining δ₂. The solubility parameters estimated by IGC are in good agreement with those calculated by other methods.     

n-Al2O3/Ni复合镀层的组织与滑动磨损性能研究

用电刷镀技术制得了镍基n-Al2O3复合镀层，并对镀层的滑动磨损性能进行了试验研究。纳米复合镀层的表面形貌比较细腻，镀层中纳米粒子分布均匀，与基质金属结合紧密。镀层显微硬度达到HV700，比快速镍镀层提高约40％。滑动磨损试验结果表明，随着纳米粒子含量的增大，镀层的耐磨性提高，摩擦系数也呈增大趋势；但当镀层中n-Al2O3粒子的超过2.56%(质量分数）时，镀层的耐磨性显著下降。纳米复合镀层的磨损机制以疲劳磨损为主，而快速镍底层以粘着磨损为主。     

混凝土芯砂石桩复合地基加固堤防软基试验研究

介绍了一种新型的地基处理方法——混凝土芯砂石桩复合地基法及其在水利防洪堤软基加固工程中的应用情况。通过现场原位观测和试验,研究了混凝土芯砂石桩复合地基固结变形、孔压消散、桩土应力分担及承载力特性,结果表明混凝土芯砂石桩强度高,排水固结能力强,能迅速提高桩间土强度和承载力,应用于水利堤防工程既能控制堤防深厚软基的工后沉降,又能提高堤防边坡的稳定性,推广应用前景良好。     

Development of sealing compositions with nanostructure iron-based fillers

The possibility of utilizing nanopowders of iron and Fe-Co-Ni produced bu a thermochemical method in the fabrication of sealing composition materials is investigated. It is established that such hermetic sealing composition materials function reliably under extremal conditions and guarantee elevated strength of adhesion to the surface of the metal and high corrosion and temperature stability. __________ Translated from Poroshkaya Metallurgiya, Nos. 3–4(448), pp. 112–117, March–April, 2006.     

Growth and characterization of GaAs films deposited on Ge/Si composite substrates by metalorganic chemical vapor deposition

We report the results of studies which have been made on heteroepitaxial layers of GaAs and AlGaAs grown by metalorganic chemical vapor deposition on composite substrates that consist of four different types of heteroepitaxial layered structures of Ge and Ge-Si grown by molecular beam epitaxy on (100)-oriented Si substrates. It is found that of the four structures studied, the preferred composite substrate is a single layer of Ge ∼1 μm thick grown directly on a Si buffer layer. The double-crystal X-ray rocking curves of 2 μm thick GaAs films grown on such substrates have FWHM values as small as 168 arc sec. Transmission electron micrographs of these Ge/Si composite substrates has shown that the number of dislocations in the Ge heteroepitaxial layer can be greatly reduced by an anneal at about 750° C for 30 min which is simultaneously carried out during the growth of the GaAs layer. The quality of the GaAs layers grown on these composite substrates can be greatly improved by the use of a five-period GaAs-GaAsP strained-layer superlattice (SLS). Using the results of these studies, low-threshold optically pumped AlGaAs-GaAs DH laser structures have been grown by MOCVD on MBE Ge/Si composite substrates.     

表面引发剂对熔融铝合金直接氧化生长的影响

为了控制熔融铝合金直接氧化法制备Al2O3/Al复合材料的氧化生长,采用ZnO,SiO2和MgO3种表面引发剂,研究它们对Al-Si-Zn合金氧化生长过程及Al2O3/Al复合材料组织形貌的影响.结果表明:与未使用引发剂时相比,使用SiO2,ZnO或MgO表面引发剂制备的粉末都能显著地缩短Al-Si-Zn合金的氧化生长孕育期,提高合金氧化生长速率,改善复合材料的胞状生长方式,提高复合材料的组织均匀度和致密度,为实际生产应用提供了依据.实验发现:ZnO表面引发剂的使用效果最为突出,其最佳添加量为12mg/cm2.