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71.
混凝土结构的质量通病——裂缝 总被引:3,自引:1,他引:2
从材料、结构构造、施工工艺、地基变形、温湿度变形等方面论述了混凝土裂缝产生的原因 ,提出只有真正了解裂缝产生的原因 ,才能有针对性地采取有效措施 ,确保工程质量 相似文献
72.
高层地下室底板混凝土施工的裂缝控制 总被引:1,自引:0,他引:1
以德益花园写字公寓楼地下室底板205m厚混凝土的施工工程为例,坚持预防为主的原则,采取了一系列温控技术措施,有效地防止或控制了温度裂缝(收缩裂缝)的产生,确保了混凝土的施工质量。 相似文献
73.
74.
Epitaxial lamellar gallium selenide (GaSe) semiconductors have been grown on trench-patterned silicon (Si) substrates by molecular beam epitaxy. An intriguing star-like patterned morphology was identified by atomic force microscopy on these epilayers. This non-trivial feature can be correlated with the accumulation of stacking faults of two concurrent epitaxial domains around self-oriented triangular pits developed earlier on the Si(111) surface by the chemical etching. Crystallographic considerations show how the stars can be formed. 相似文献
75.
Sintering and grain growth of nano-crystalline undoped ZnO has been studied in detail over a wide range of temperature and holding time. Below 800 °C, sintering of over 70% theoretical density is not observed, irrespective of particle size. At 900 °C for 6 h, the nano-crystalline sample sinters to 99% of theoretical density whereas the density for as received sample is 93% of theoretical density. However, at 1300 °C or higher, the densification is found to be much faster and after a few hours becomes independent of holding time. Grain growth studies reveal a similar feature of attaining saturation over holding time. The average saturated grain size is found to be ∼1.5 and ∼2.2 μm at 800 and 900 °C, respectively, while at 1300 °C or higher, it is in between 12 and 13 μm. 相似文献
76.
77.
Some therapists hold that the Bobo and other aggressive toys should be excluded from the playroom as they elicit acting-out behavior that is transferred to the world outside the playroom. However, many therapists view the inclusion of these items as imperative elements that facilitate positive growth and maturation in the child. Interviews with authorities in the field of play therapy support the position that the inclusion of the Bobo is not only useful, but a therapeutic necessity. (PsycINFO Database Record (c) 2010 APA, all rights reserved) 相似文献
78.
Y. MURAKAMI K. TAKAHASHI R. KUSUMOTO 《Fatigue & Fracture of Engineering Materials & Structures》2003,26(6):523-531
ABSTRACT The fatigue crack growth behaviour of 0.47% carbon steel was studied under mode II and III loadings. Mode II fatigue crack growth tests were carried out using specially designed double cantilever (DC) type specimens in order to measure the mode II threshold stress intensity factor range, ΔKIIth. The relationship ΔKIIth > ΔKIth caused crack branching from mode II to I after a crack reached the mode II threshold. Torsion fatigue tests on circumferentially cracked specimens were carried out to study the mechanisms of both mode III crack growth and of the formation of the factory‐roof crack surface morphology. A change in microstructure occurred at a crack tip during crack growth in both mode II and mode III shear cracks. It is presumed that the crack growth mechanisms in mode II and in mode III are essentially the same. Detailed fractographic investigation showed that factory‐roofs were formed by crack branching into mode I. Crack branching started from small semi‐elliptical cracks nucleated by shear at the tip of the original circumferential crack. 相似文献
79.
The purpose of this study is to clarify damage process of “Type IV cracking” in weldment of a 2.25Cr-1Mo steel and to propose a micro damage prediction method. From continuous observation under a creep-fatigue test, it was found that spherical shape voids initiated and grew on grain boundaries in fine grain region and these voids grow continuously by changing their shape to crack-like. Both spherical and crack-like void growth rate equations were derived from the proposed void growth model. It was indicated that measured void growth rate under the creep-fatigue loading was well predicted by the growth rate equations. 相似文献
80.
D. SHERMAN 《Fatigue & Fracture of Engineering Materials & Structures》2007,30(1):32-40
Fracture experiments with silicon specimens in recent years have shown the need for a new approach to the analysis of rapidly propagating cracks in single crystals. Behaviour and phenomena have been revealed that fracture in these materials is rather different from the fracture of both amorphous and polycrystalline materials. We show that continuum mechanics is insufficient for analyzing crack propagation in single crystals since it is unable to consider atomistic‐scale phenomena. Accordingly, we describe basic phenomena associated with rapid crack propagation in silicon : (i) anisotropic velocity‐dependent R‐curve behaviour, as a key phenomenon dictating atomistic scale behaviour, (ii) crack deflection from one cleavage plane to another as a mesoscopic scale phenomenon in single‐crystal fracture, (iii) the Rayleigh surface wave speed as the limiting crack tip velocity is re‐examined, (vi) the lowest crack velocity in brittle crystals is examined, and finally (v) the interaction between crack path and preferred cleavage planes in single crystals is depicted. 相似文献