锗酸铋（Bi4Ge3O12）单晶热物理性质的研究

本文用不同的测试技术和方法测定了锗酸铋(BGO)单晶的比热(300～800K)热膨胀系数(100～1100K)和导温系数(140～700K),进而导出了 BGO 单晶不同温度下的导热系数、定容比热、德拜温度和格虑内森数。本文还对 BGO 单晶热物理性质的变化规律作了理论解释。     

Melting and crystallization behaviour of elastoplastic semicrystalline copolymers: poly(ether ester)

The melting and crystallization behaviour of an elastoplastic semi-crystalline poly(etherester) has been studied by differential scanning calorimetry. The shape of the melting endotherm is strongly dependent on heating rate and annealing time and results from the sum of simultaneous melting and crystallization phenomena. Samples prepared by different techniques, i.e. by solvent evaporation or by melt extrusion, behave very differently owing to specific crystal morphologies. By applying the Hoffman-Weeks plot, the equilibrium melting temperature has been extrapolated. The Avrami treatment allows the calculation of the index n and of the rate constant K from the isothermal kinetic data.     

Structure and Magnetic Properties of LaCo_(13-X)M_X Intermetallic Compounds

ＳｔｒｕｃｔｕｒｅａｎｄＭａｇｎｅｔｉｃＰｒｏｐｅｒｔｉｅｓｏｆＬａＣｏ＿（１３－Ｘ）Ｍ＿ＸＩｎｔｅｒｍｅｔａｌｌｉｃＣｏｍｐｏｕｎｄｓＷＵＪｉａｎＭｉｎ；ＬＩＦｅｎｇ；ＴＡＩＬｉＣｈｉａｎｄＺＨＥＭＧＱｕｎＳｔｒｕｃｔｕｒｅａｎｄＭａｇｎｅｔｉｃＰ...     

K0.9Li0.1（Ta0.5Nb0.5）O3晶体压电应变系数的测量

用准静态ｄ＿（３３）测量仪和干涉法相结合。测量了Ｋ＿（０．９）Ｌｉ＿（０．１）（Ｔａ＿（０．５）Ｎｂ＿（０．５）Ｎｂ＿（０．５））Ｏ＿３晶体的压电应变系数。结果为：ｄ＿（３３）＝８６．０，ｄ＿（３３）＝一２９．５，ｄ＿（１５）＝１１２．９×１０￣（－１２）Ｃ／Ｎ．     

Nd：MgO：LiNbO3晶体的荧光光谱及其双晶体腔内互倍频实验

采用激光感生荧光技术测量了Ｎｄ：ＭｇＯ：ＬｉＮｂＯ３晶体的偏振荧光光谱，简要地说明了Ｎｄ：ＭｇＯ：ＬｉＮｂＯ３双晶体腔内互倍频的基本原理，并在实验中用染料激光作泵浦源实现了其双晶体腔内互倍频运转；得到５４３ｎｍ横模倍频绿光单端输出约ＹＭＷ，腔前泵浦阈值约３８ＭＷ，总转换效率约为１．３％。     

机械合金化Zr-Al-Ni-Cu-Ag非晶合金的晶化行为

研究了机械合金化非晶态Zr65Al7.5Ni10Cu7.5Ag10合金的晶化过程，由于存在扩散不均匀区，机械合金化非晶合金在深过冷液相区的退火组织不同于快淬合金，在深过冷液相区退火，析出二十面体准晶相及一些知相：在靠近第一个放热峰的温度退火，近出Zr2Cu相：第二个放热峰对应残余非晶相及准晶相向Zr2Ni,Zr2-Al3的转变。     

钙铁硅铁磁体微晶玻璃热处理制度的研究

使用XRD、DTA、VSM等分析测试手段对在还原气氛下含少量B2O3、P2O5钙铁硅微晶玻璃的热处理制度进行了较深入的研究。研究发展，预核化处理对于钙铁硅微晶玻璃的晶化无明显作用。900℃作为钙铁硅微晶玻璃的晶化温度较适宜，晶化时间宜8h以上。     

非晶Sm5Fe74.3Nb1.5Si11.7B4.5C2.5Cu0.5合金经预退火后的晶化动力学的DTA研究

研究了非晶Sm5Fe74.3Nb1.5Si11.7B4.5C2.5Cu0.5合金经400℃，保温10min预退火后的晶化动力学。结果表明；该合金的晶化相为α-Fe固溶体和Sm2Fe17Cx金属间化合物，两相的晶化表观激活能分别为557KJ/mol和514KJ/mol，当晶化体积分数为60%时，α-Fe相的晶化激活能达极大值；Sm2Fe17Cx相晶化激活能则随其晶化体积分数的增加而逐渐减小。     

Formation of low-resistivity poly-Si and SiNx films by Cat-CVD for ULSI application

In this paper, bulk-Si metal–oxide–semiconductor field effect transistors (MOSFETs) are fabricated using the catalytic chemical vapor deposition (Cat-CVD) method as an alternative technology to the conventional high-temperature thermal chemical vapor deposition. Particularly, formation of low-resistivity phosphorus (P)-doped poly-Si films is attempted by using Cat-CVD-deposited amorphous silicon (a-Si) films and successive rapid thermal annealing (RTA) of them. Even after RTA processes, neither peeling nor bubbling are observed, since hydrogen contents in Cat-CVD a-Si films can be as low as 1.1%. Both the crystallization and low resistivity of 0.004 Ω·cm are realized by RTA at 1000 °C for only 5 s. It is also revealed that Cat-CVD SiN_x films prepared at 250 °C show excellent oxidation resistance, when the thickness of films is larger than approximately 10 nm for wet O₂ oxidation at 1100 °C. It is found that the thickness required to stop oxygen penetration is equivalent to that for thermal CVD SiN_x prepared at 750 °C. Finally, complementary MOSFETs (CMOSs) of single-crystalline Si were fabricated by using Cat-CVD poly-Si for gate electrodes and SiN_x films for masks of local oxidation of silicon (LOCOS). At 3.3 V operation, less than 1.0 pA μm⁻¹ of OFF leakage current and ON/OFF ratio of 10⁷–10⁸ are realized, i.e. the devices can operate similarly to conventional thermal CVD process.     

Effects of α‐form or β‐form nuclei on polymorphic crystalline morphology of poly(butylene adipate)

The effects of α‐form and β‐form nuclei on polymorphic morphology of poly(butylene adipate) (PBA) upon recrystallization from the molten state up to various T_max values were examined by differential scanning calorimetry (DSC), wide‐angle X‐ray diffraction (WAXD) and polarized light microscopy (PLM). In this study, PBA with complex melting and polymorphism behaviour was used as a model for examining different types and extents of residual nuclei. As the PBA initially containing the sole α‐crystal was brought to a molten state of various T_max, the extents of trace α‐form crystal nuclei varied and were dependent on T_max. Furthermore, it did not matter whether, initially, the PBA contained α‐ or β‐form crystals (or both) because only a single type of α‐nuclei could be left upon treatment to the molten liquid state at T_max. Therefore, only the α‐crystal in PBA had ‘memory capacity’ in the molten liquid state while the β‐crystal did not. This was so because the latter had been completely transformed into the solid state prior to being heated into a liquid. PBA crystallized before α‐nuclei could be packed into α‐crystal, regardless of the crystallization temperature (T_c). For recrystallization from molten PBA without any nuclei, the crystalline polymorphism was correspondingly influenced by T_c. Copyright © 2005 Society of Chemical Industry