钕铁硼稀土永磁材料室温熔盐电镀铝的研究

在钕铁硼(NdFeB)稀土材料表面直接进行水溶液电镀时,存在镀层分层、易起泡等缺陷.采用AlCl3/EMIC(1-甲基-3-乙基氯化咪唑)室温熔盐电解质在NdFeB永磁材料表面电镀铝,是提高其表面防护质量的有效方法.探讨了NdFeB永磁材料在室温熔盐中电镀铝的可行性、熔盐配比和芳香化合物对电镀铝层组织形态的影响,同时对镀层形成的机理进行了初步探讨.研究表明:采用AlCl3/EMIC室温熔盐电解质可在NdFeB永磁材料表面获得满意的铝镀层;铝镀层纯度很高,较完整平滑;添加芳香化合物可以大大提高镀层的质量,使晶粒细小、致密.     

改性蛭石吸附电镀废水中铜离子的研究

将天然蛭石进行处理制备出改性蛭石.在静态条件下,对改性蛭石处理含铜废水进行了研究,探讨了改性蛭石用量、废水酸度、接触时间、温度对除铜效果的影响.结果表明,在废水pH值5.0～7.0、Cu2 浓度0～100 mg/L范围内,按Cu2 与改性蛭石质量比为1/30投加改性蛭石进行处理,Cu2 去除率可达98%以上,且处理后废水pH值为7.62,废水近中性.含Cu2 为28.6 mg/L的电镀废水经改性蛭石处理后,废水中Cu2 含量为0.36 mg/L,Cu2 含量显著低于国家排放标准.     

Selective Recovery of Cadmium,Cobalt, and Nickel from Spent Ni–Cd Batteries Using Adogen® 464 and Mesoporous Silica Derivatives

Spent Ni–Cd batteries are now considered an important source for many valuable metals. The recovery of cadmium, cobalt, and nickel from spent Ni–Cd Batteries has been performed in this study. The optimum leaching process was achieved using 20% H₂SO₄, solid/liquid (S/L) 1/5 at 80 °C for 6 h. The leaching efficiency of Fe, Cd, and Co was nearly 100%, whereas the leaching efficiency of Ni was 95%. The recovery of the concerned elements was attained using successive different separation techniques. Cd(II) ions were extracted by a solvent, namely, Adogen^® 464, and precipitated as CdS with 0.5% Na₂S solution at pH of 1.25 and room temperature. The extraction process corresponded to pseudo-2nd-order. The prepared PTU-MS silica was applied for adsorption of Co(II) ions from aqueous solution, while the desorption process was performed using 0.3 M H₂SO₄. Cobalt was precipitated at pH 9.0 as Co(OH)₂ using NH₄OH. The kinetic and thermodynamic parameters were also investigated. Nickel was directly precipitated at pH 8.25 using a 10% NaOH solution at ambient temperature. FTIR, SEM, and EDX confirm the structure of the products.     

PVC塑料电镀铜的研究

研究了工艺条件和添加剂对PVC塑料上电镀铜的沉积速度、硬度、结合力、耐蚀性、表面形貌等性能的影响。结果表明,PVC塑料上电镀铜的合理配方及工艺:CuSO4150g/L,H2SO440g/L,NaCl0.08g/L,0.015A/cm2,50℃,1.5h;较优单组分添加剂为:聚乙二醇-6000(50mg/L);最佳复合添加剂为:聚乙二醇-6000(50mg/L)+光亮剂OP-10(50mg/L)。     

电刷镀Ni-PTFE复合镀层工艺研究

采用电刷镀技术,在不同工艺参数条件下,制备了Ni-PTFE复合镀层,并研究了各工艺参数对PTFE复合量,以及PTFE复合量对摩擦系数的影响。结果表明,PTFE加入量和镀液温度对复合量的影响较大,而电压和相对运动速度对复合量影响较小;摩擦系数随PTFE复合量的增加先减小,然后保持不变;PTFE加入量为10mL/L、镀液温度为40°C、电压为8V、相对运动速度为12m/min时,可获得PTFE复合量较高且分布均匀、表面形貌好的Ni-PTFE复合镀层。     

叠层模板电沉积直接制造金属零件的研究

如何从现有的快速成型(RP)工艺直接得到金属零件以及如何开发新的适合于金属直接成型的工艺是当前RP研究的一个热点问题.本文提出了一种基于离散/堆积快速成型原理和金属电沉积原理的新的金属零件直接成型工艺--叠层模板电沉积直接制造金属零件.具体介绍其成型设备的结构及工艺原理,并结合加工实例(铜的电沉积)对加工过程中影响成型质量、效率的主要因素进行了分析,提出了解决方案.     

(Cd,Co,Nb)掺杂的SnO2压敏材料的电学性质

研究了Cd对(Co，Nb)掺杂SnO2压敏材料电学性质的影响。组分为97．65％SnO2 O．75％Co2O3 0．10％Nb2O5 1．50％CdO的压敏电阻具有最大非线性系数(a=22．2)和最高的势垒(ψB=0．761eV)．当CdO的摩尔分数从0增加到3％时，(Co，Nb)掺杂SnO2压敏电阻的击穿电压从366V／mm增大到556V／mm，1kHz时的相对介电常数从1429减小到1108。晶界势垒高度测量揭示，SnO2的晶粒尺寸的减小是击穿电压增高和介电常数减小的主要原因。对Cd掺杂量增加引起SnO2晶粒减小的根源进行了解释。     

A Facile Microwave Avenue to Electrochemiluminescent Two‐Color Graphene Quantum Dots

With the assistance of microwave irradiation, greenish‐yellow luminescent graphene quantum dots (gGQDs) with a quantum yield (QY) up to 11.7% are successfully prepared via cleaving graphene oxide (GO) under acid conditions. The cleaving and reduction processes are accomplished simultaneously using microwave treatment without additional reducing agent. When the gGQDs are further reduced with NaBH₄, bright blue luminescent graphene quantum dots (bGQDs) are obtained with a QY as high as 22.9%. Both GQDs show well‐known excitation‐dependent PL behavior, which could be ascribed to the transition from the lowest unoccupied molecular orbital (LUMO) to the highest occupied molecular orbital (HOMO) with a carbene‐like triplet ground state. Electrochemiluminescence (ECL) is observed from the graphene quantum dots for the first time, suggesting promising applications in ECL biosensing and imaging. The ECL mechanism is investigated in detail. Furthermore, a novel sensor for Cd²⁺ is proposed based on Cd²⁺ induced ECL quenching with cysteine (Cys) as the masking agent.     

电镀废水处理分布式智能控制系统

文章针对电镀废水分类处理的工艺特点,提出了一套实用的分布式智能控制系统方案,详细叙述了系统整体结构和控制器的硬件电路设计。实际应用结果表明,分布式系统架构的引入,极大地提高了系统的稳定性、可靠性和可扩展性,上位机强大的运算能力为高级控制算法的实现提供了一个平台。