Interfacial electron density profile in Nb/Si bilayer films: an X-ray reflectivity study

This article describes a systematic study of the nature of interfaces involved in a Nb layer deposited on Si (Nb-on-Si) and Si layer deposited on Nb (Si-on-Nb) bilayer films by using a UHV electron beam evaporation technique, having individual layer thickness of 35 and 100 Å each. By using Grazing angle X-ray reflectivity and adopting a proper modelling technique the electron density profile (EDP) as a function of depth has been determined in the samples. EDP determined in as-deposited 35 Å Nb and 35 Å Si bilayer films show that the width of Si-on-Nb and Nb-on-Si interfaces are 20 Å and 40 Å, respectively. The difference observed in the width of two interfaces is attributed to the different growth morphology of 35 Å Nb and 35 Å Si single-layer films as revealed by atomic force microscopy (AFM) investigations. EDP determined from measured XRR data for 100 Å Nb and 100 Å Si deposited bilayer film shows that the width of Si-on-Nb interface is 10 Å. This observed width is smaller than the similar interface in the case of samples having an individual layer thickness of 35 Å. The corresponding interface width of Nb-on-Si is found to be 45 Å and marginally more than the similar interface in the case of the 35 Å Nb/35 Å Si bilayer samples. AFM studies carried out on 100 Å Nb and Si layers deposited separately on float glass substrate indicate similar gross as well as subtle morphological features and cannot be attributed to the observed asymmetry in this case. The observed asymmetry in EDP of two interfaces in this case is due to the enhanced diffusion of Si into the formed metal layer relative to the diffusion into the already deposited metal layer.     

Structural and optical properties of four-hexagonal polytype nanocrystalline silicon carbide films deposited by plasma enhanced chemical vapor deposition technique

Four-hexagonal polytype films of nanocrystalline silicon carbide (4H-nc-SiC) were deposited by plasma enhanced chemical vapor deposition method with more than 3×10⁴ W m⁻² threshold of power density, high hydrogen dilution ratio, and bias pretreatment. The source gases were silane, methane and hydrogen. Our work showed that under conditions similar to those used for the growth of μc-SiC—except a higher power densities over a threshold, a bigger bias pretreatment on substrates, and a moderate bias deposition—nc-SiC films could indeed be achieved. The Raman spectra and transmission electron microscopy diffraction patterns demonstrated that the as-grown films from the H₂-CH₄-SiH₄ plasma consist of amorphous network and phase-pure crystalline silicon carbide which has the 4H polytype structure. The microcolumnar 4H-SiC nanocrystallites of a mean size of approximately 1.6×10⁻⁸ m in diameter are encapsulated by amorphous SiC networks. The photoluminescence spectra of 4H-SiC at room temperature, peaking at 8.10×10⁻⁷ m using a wavelength of 5.145×10⁻⁷ m of argon ion laser, were obtained at room temperature; the luminescence mechanism is thought to be related to transitions in the energy band gap which could be ascribed to the surface states and defects in the structure of 4H-SiC nanocrystalline in these films due to its small size. The as-grown films showed an optical transmittance of 89% at 6.58×10⁻⁷ m. This higher transmittance is believed to be from the small size and amorphous matrix.     

一次时滞微分方程零解的全局吸引性

讨论了含有一个滞量的线性、非线性泛函微分方程零解的全局吸引性，对于线性泛函微分方程，x(t)=-a(t)x(t)-6(t)x(t-τ)，构造了Liapunov泛函，利用Liapunov稳定性定理，得到了线性泛函微分方程零解全局吸引的一个充分条件，同时将这一结论应用于非线性方程x(t)=F(t，x(t)，x(t-τ))和立xt)=f(x(t-τ))，证明了在一定条件下它的零解是全局吸引的。     

两种低密度校验码译码算法的性能比较与分析

研究了迭代译码算法和迭代接收算法性能,提出了64-QAM调制时伪对数似然比率的简化计算公式,并利用高斯近似密度进化技术分析了两种译码算法的性能差异.     

系统功能语法在写作教学中的运用

写作通常被认为是英语教学过程中最为困难的一个环节．如何提高写作教学水平是广大教师和研究者普遍关心的问题．探讨了如何将系统功能语法运用于写作课堂，以提高写作课教学效果．文章讨论了该语法理论在教学过程中的一些具体运用步骤，并例举一篇习作，对其进行了功能分析．分析表明系统功能语法是研究语言使用的一种极有用的工具，对指导写作教学有重要意义．     

H_2S·HO_2氢键配合物的量子化学研究

用B3LYP/6 31 1 + +G 方法研究了H2 S与HO2 自由基之间的氢键。发现了三个能量极小点。同时做了H2 S·HO2 的振动频率分析。计算预测了能量整体最小点的构型为带有 2个扭曲的氢键的五元环结构     

磁场对大鼠血清营养相关生化指标的影响

报道了旋转恒定磁场对大鼠血液生化指标的影响.在强度为0 4T,旋转速率为8Hz的磁场条件下,鼠龄3周的大鼠,磁场每天处理2h,共持续10周,导致血清葡萄糖水平显著下降;鼠龄为10周的大鼠,每天磁场处理2h,共持续4周,则引起血清甘油三酯水平的显著降低,血清高密度脂蛋白水平则显著上升.     

矿物功能材料对混凝土氯离子渗透性的影响

在单因素影响方案的基础上 ,研究了多种磨细工业废渣及天然矿物材料的不同组合与叠加对混凝土氯离子渗透性的影响。通过试验研究和理论分析证实了硅灰与偏高岭土、粉煤灰、矿渣之间存在着“超复合叠加效应”,为合理选择矿物功能材料的种类及掺配方式 ,特别是偏高岭土的合理应用提供了技术思路 ,实现了矿物功能材料在提高混凝土抗氯离子渗透性方面的性能优化与降低成本的双重效用     

有机-多金属氧酸盐杂化材料的研究进展

综述了多金属氧酸盐与几类有机物杂化所得具有新型功能性材料的研究状况，从参与杂化的有机物四硫富瓦烯类、含氮有机物、含茂环有机金属和有机高聚物等方面进行评述，总结各类有机-多金属氧酸盐杂化材料在光、电和磁等方面性质并展望其作为功能性分子材料的发展趋势和应用前景。     

Classification of amorphous-silicon microstructures by structural parameters: molecular dynamics study

Amorphous silicon is the most popular material in the field of semiconductors. However, little is known about its microstructures. To understand the dependence of these microstructures on the fabrication process and on structural relaxation, amorphous silicon samples fabricated by various simulated processes are classified according to structural parameters within the molecular dynamics method.

The results show that the amorphous structures fabricated by the melt-quench method have many odd-membered rings and large bond-angle deviation. The structures fabricated by the molecular-beam epitaxy method involve fewer floating bonds, smaller bond-angle deviations, and fewer six-membered rings in comparison with the melt-quenched structure. Through long-term annealing, both structures are transformed to the most stable structure as described by the Tersoff potential. It is also found that the continuous random network structure does not meet the Tersoff potential. Verification of the results through first-principle calculations shows that well-relaxed amorphous structure can be described by classical molecular dynamics despite the slightly large number of the floating bond and the overestimation of amorphous-phase energy.