用于高压电容器的SrTiO3基陶瓷

报道ＳｒＴｉＯ３基陶瓷的制备方法和介电性质，给出了用此种陶瓷制成的高压电容器的试验结果，并对它位进行了讨论。     

SOI全介质隔离与高频互补双极兼容工艺

ＳＯＩ材料的全介质隔离技术与高频互补双极工艺的结合是研制抗辐照能力强、频带宽、速度高的集成运算放大器的理想途径，从实验的角度提出了一种ＳＯＩ材料全介质隔离与高频互补双极工艺兼容的工艺途径。     

对洪水分级的浅见

洪水的等级划分应考虑流量、水位、防洪能力及灾害等因素,综合这些因素把洪水分成5个等级。1、2级洪水,洪水流量小,水位低,基本无灾;3级洪水,洪水流量较大或水位较高,有一定灾害;4级洪水,为大洪水或高水位,有较大灾害;5级洪水,为特大洪水或高水位,灾情严重。     

海洋石油开发工业污染物产生系数和排放系数研究

污染物产生系数和排放系数是工程环境影响评价的重要指标,但对于海洋石油开发工程环境影响评价来说,迄今尚无具权威性的系数可资使用。在我国近海石油开发工程污染源系统调查的基础上,对海洋石油开发行业污染物产生系数和排放系数的定义、计算方法、应用范围及应用方式进行了探讨,研究结果可为海洋石油开发工程项目环境影响评价及环境保护管理,以及行业或企业有关标准的制定提供参考。     

电源对介质阻挡放电(DBD)激发准分子(XeCl*)辐射的影响

本文对电源参数如电压幅值、频率及正负电压对介质阻挡放电激发准分子XeCl 紫外 (30 8nm)辐射的影响进行了实验研究。结果表明 ,UV辐射随电压幅度的增加而增强 ,但效率下降 ;提高频率 ,增加了放电次数 ,导致UV辐射的增强 ;此外 ,在较高的频率下 ,电压上升沿变陡 ,使得电子获得的能量主要用于原子的激发和电离。正、负电压放电的不对称源于电极结构的不对称而引起的放电过程的差异 ,负电压内电极可向放电管中馈入更多的能量 ;比较发光光谱可判断生成准分子的等离子体化学过程没有明显的差别     

Barrier layer effect of tantalum on the electromigration in sputtered copper films on hydrogen silsesguioxane and SiO2

As IC devices scale down to the submicron level, the resistance-capacitance (RC) time delays are the limitation to circuit speed. A solution is to use low dielectric constant materials and low resistivity materials. In this work, the influence of underlying barrier Ta on the electromigration (EM) of Cu on hydrogen silsesquioxane (HSQ) and SiO₂ substrates was investigated. The presence of a Ta barrier not only improves the adhesion between Cu and dielectrics, but also enhances the crystallinity of Cu film and improves the Cu electromigration resistance. The activation energy obtained suggests a grain boundary migration mechanism and the current exponent calculated indicates the Joule heating effect.     

浮体门设计的探索与实践

水电站泄水道破坏修复工程,是一项风险高、难度大、前景广阔的系统工程。刘家峡水电站泄水道2号孔破坏修复的关键,是采用人工深水软导向浮体闸门封堵孔口,形成门后洞内旱地施工条件;龚嘴水电站10号冲砂底孔破坏修复的关键,增设浮体闸门采用自动潜行式浮体闸门封堵孔口,形成门后洞内旱地施工条件;哈萨克斯坦CHARDARA水电站SYNAS项目泄水底孔修复的关键,采用分次降水安装浮体闸门侧支承的方法,挡住引水发电机组的下游尾水,在泄水道进口检修门和流道出口之间形成门旱地施工。此3项泄水道修复工程在行业内没有先例,难度很大。整体方案具有创新性,并且均已高质量竣工并投入正常运行。     

复合聚全氟乙丙烯材料的介电及高频击穿性能研究

在聚全氟乙丙烯(FEP)中添加 TiO_2和 Al_2O_3,通过热压成型的方法制备了 FEP/TiO_2复合材料和 FEP/Al_2O_3复合材料,研究了氧化物添加量对复合材料介电常数、介电损耗和高频击穿性能的影响。结果表明,随氧化物含量的增加,复合材料的介电常数和介电损耗均增加;在同一添加量下,TiO_2对复合体系的介电性能影响较大。FEP/TiO_2复合材料的高频击穿性能随 TiO_2含量的增加而下降,在 TiO_2含量为4.0%(质量分数,下同)时,复合材料的损伤阈值已降为 FEP 材料损伤阈值的48.9 %。而 FEP/Al_2O_3复合材料的高频击穿性能随 Al_2O_3含量的增加而升高,当 Al_2O_3含量为1.2%时,复合材料的损伤阈值已增大到 FEP 材料损伤阈值的2倍,达到313 J/m~2。     

Extracting Electron Densities in N-Type GaAs From Raman Spectra: Theory

In this paper, we present the theory for calculating Raman line shapes as functions of the Fermi energy and finite temperatures in zinc blende, n-type GaAs for donor densities between 10¹⁶ cm⁻³ and 10¹⁹ cm⁻³. Compared to other theories, this theory is unique in two respects: 1) the many-body effects are treated self-consistently and 2) the theory is valid at room temperature for arbitrary values of the ratio R = (Q²/α), where Q is the magnitude of the normalized wave vector and α is the normalized frequency used in the Raman measurements. These calculations solve the charge neutrality equation self-consistently for a two-band model of GaAs at 300 K that includes the effects of high carrier concentrations and dopant densities on the perturbed densities of states used to calculate the Fermi energy as a function of temperature. The results are then applied to obtain the carrier concentrations from Fermi energies in the context of line shapes in Raman spectra due to the coupling between longitudinal optical phonons and plasmons. Raman measurements have been proposed as a non-destructive method for wafer acceptance tests of carrier density in semiconductor epilayers. The interpretation of Raman spectra to determine the majority electron density in n-type semiconductors requires an interdisciplinary effort involving experiments, theory, and computer-based simulations and visualizations of the theoretical calculations.     

（Ba1-xSrx）（Zn1/3Nb2/3）O3微波介质陶瓷温度系数的异常

研究了（Ba1-xSrx）（Zn1/3Nb2/3）O3微波介质陶瓷温度系数的非线性变化以及异常的原因。根据CM公式，随着系统中Sr（Zn1/3Nb2/3）O3的增多，τc的异常是由于氧八面体的畸变导致的相转变（对称性降低）所造成的（晶体结构由无序立方相向有序赝立方相的连续变化）。相转变的发生相应影响了极化以及极化模式，这是造成τc异常的根本原因。