PBSZT系大功率压电陶瓷极化工艺的研究

为探索大功率低损耗压电陶瓷材料的最佳制备工艺,对改性锆钛酸铅压电陶瓷Pb0.9Ba0.05Sr0.05(Sn1/3Nb2/3)0.06(Zn1/3Nb2/3)0.06Ti0.44Zr0.44O3 0.5wt%MnO2 0.5wt%Sb2O3的极化工艺进行研究。结果表明,该体系的最佳极化电场为4Kv/mm,极化温度120℃左右,此时得到的陶瓷性能较佳。     

New approach for the preparation of nanoporous polyorganosilicate low‐k films

The distribution of pores and the mechanical properties of materials are the key factors in preparing satisfactory low‐k films. In the present study, a kind of silsesquioxane‐polyethylene glycol (SSQ‐PEG) was synthesized and used as a template to make the distribution of pores more even in the low‐k films. The crosslinking density of films could be adjusted by the sol‐gel of tetramethoxysilane/dimethoxydimethylsilane with various proportions. The porosity of films could also be adjusted with different proportions of pendant PEG chains introduced. A dielectric constant as low as 2.1 had been achieved for nanoporous polyorganosilicate films with good tenacity. © 2006 Wiley Periodicals, Inc. J Appl Polym Sci 103: 1238–1243, 2007     

Investigation of conductivity characteristics of nitrile butadiene rubber vulcanizates filled with semiconducting carbide ceramic

SiC‐ and B₄C‐filled NBR rubber composites were prepared with various volume fractions of filler by a conventional roll‐mill method. The morphological structures of the NBR–SiC and NBR–B₄C composites were analyzed by scanning electron microscopy. The dependence of room‐temperature volume resistivity (ρ_v) on the concentration of filler in the two systems was studied. In addition, variation in the number of current carriers (n), mobility carriers (μ), dielectric constant (ε), and dielectric loss factor (tan δ) on filler concentration in the two systems were investigated in detail. The applicability of composites as negative temperature coefficient (NTCR) linear thermistors was studied by the dependence of volume resistivity on temperature. The resistivity showed negative temperature dependence and changed linearly with temperature parallel. The conduction mechanism of the conductivity of the two composites was analyzed in terms of the computed activation energy and hopping energy. Change in volume resistivity as a function of frequency for the two systems was also investigated. Finally, the dependence of volume resistivity on applied pressure and possible real applications of these composites as transducers in pressure sensors were also studied. © 2006 Wiley Periodicals, Inc. J Appl Polym Sci 103: 2158–2165, 2007     

Measurement of AC conductivity and dielectric properties of flexible conductive styrene–butadiene rubber‐carbon black composites

Flexible conductive polymer composites were prepared using styrene–butadiene rubber (SBR) as a matrix and conductive carbon black as filler. The filler loading was varied from 10 to 60 phr. The effect of frequency, filler loading, temperature, and applied pressure on the AC conductivity, permittivity, and loss factor of the composites was studied. The AC conductivity of low and high loaded composites was found to be frequency dependent and independent respectively. The permittivity and the loss factor were continuously decreasing with increasing frequency. The increase in filler loading increased the AC conductivity, dielectric constant, and loss factor of the composites. Increase in temperature imposed increase in conductivity and permittivity of the composites. With increasing applied pressure the properties showed exponential increase. The effect of time under a constant compressive stress was studied and dielectric relaxation times were evaluated. © 2007 Wiley Periodicals, Inc. J Appl Polym Sci 104: 986–995, 2007     

Molecular dynamics of poly(glycolide‐co‐L‐lactide) copolymer during isothermal cold crystallization

Poly(glycolide‐co‐l ‐lactide) (PGA/PLLA) is a random copolymer with 92 wt % PGA, being the basic resin for Vicryl® suture. Molecular dynamics of PGA/PLLA in its wholly amorphous state and during isothermal cold crystallization at 70 and 80°C have been analyzed. Experimental results were generated over a wide range of frequency and temperature by broad‐band dielectric spectroscopy (DRS). The variation of the average relaxation time (defined as τ = [1/2]πf_max where f_max is the frequency at maximum loss for the main α relaxation) has been studied during cold crystallization and the temperature dependence of this average relaxation time for wholly amorphous and crystallized samples has been analyzed. This behavior has been modeled by Havriliak–Negami, Vogel–Fulcher–Tammann, and Kohlrausch–Williams–Watts equations. The evolution profile of the dynamics (frequency at which the maximum loss appears, f_max) depends on the crystallization temperature, being different at 80°C relatively to 70°C, which could reflect different progress of the spherulitic morphology, as it is shown by the evolution of the morphologies obtained during the crystallization processes, followed by optical microscopy. While the loss maximum (and consequently relaxation times) remains almost unmodified during the crystallization process at 70°C, for the process at 80°C the maximum first moves slightly to higher frequencies (shortening of relaxation times) and at the final stages of crystallization it moves to lower frequencies (increasing the relaxation times). Supporting evidence about the thermal behavior of the polymers has been obtained with DSC. © 2007 Wiley Periodicals, Inc. J Appl Polym Sci, 2007     

Effect of the matrix crystallinity on the percolation threshold and dielectric behavior in percolative composites

Through the use of polyethylenes with different crystallinities as matrices, the effects of the matrix crystallinity on the percolation threshold and dielectric behavior of percolative composites have been investigated. The results suggest that the percolation threshold is negatively related to the matrix crystallinity, whereas the enhancement of the dielectric constant is positively related to the matrix crystallinity. A two‐dimensional diagram is proposed to illustrate such relationships. In addition, it has been found that the insulator–conductor transition is much flatter in low‐crystallinity‐matrix‐based composites, and this may be favorable for preparing threshold composites with a high dielectric constant and a low loss tangent. © 2007 Wiley Periodicals, Inc. J Appl Polym Sci, 2007     

Electrical discharge machining using simple and powder-mixed dielectric: The effect of the electrode area in the surface roughness and topography

Electrical discharge machining (EDM) is one of the most widely disseminated manufacturing technologies, in particular as regards the generation of accurate and complex geometrical shapes on hard metallic components. Nevertheless current EDM technologies have major limitations when dealing with fine surface finish over large process area. Indeed this is one reason that explains the need of final manual polishing of mould cavities performed by EDM. Recently EDM with powder-mixed dielectric (PMD-EDM) has been a focus of an intense research work in order to overcome these technological performance barriers. This paper presents a research work within the objective to acquire deep knowledge on EDM technology with powder mixed dielectric and to compare its performance to the conventional EDM when dealing with the generation of high-quality surfaces. In particular the analysis of the effect of the electrode area in the surface quality measured by the surface roughness and craters morphology was carried out for both technologies. The results achieved evidenced a linear relationship between the electrode area and the surface quality measures as well as a significant performance improvement when the powder mixed dielectric is used.     

常压干燥法的疏水型低介电常数气凝胶薄膜

气凝胶薄膜具有超低的介电常数,在超大规模集成电路互连系统中有着巨大的应用潜力.采用溶胶-凝胶技术,通过酸/碱二步法控制实验条件,结合低表面张力溶剂替换以及CH3非活性基团置换修饰、超声振荡等,不需要超临界干燥,而仅在常压下就可以通过简单的提拉过程制备出疏水型低介电常数气凝胶薄膜.测得的红外透射光谱表明所制备的薄膜由于掺入甲基基团而疏水,接触角测试值约120°,制备过程中充分注意到稀释、老化、有机修饰表面、热处理和提拉条件对膜的影响,使其过程达到最佳.热处理温度在150～650℃,采用6%三甲基氯硅烷时,制得的疏水型气凝胶薄膜折射率为1.08～1.12,介电常数为1.62～1.92.     

添加TiO2对Mg4Nb2O9陶瓷的结构与性能的影响

Mg4Nb2O9具有与α-Al2O3相同的刚玉型晶体结构,可望成为新一代高Q、低ε基板材料.然而,该材料却具有很大的负谐振频率温度系数(τf=-7.05×10-5/℃),期望通过添加TiO2(τf=4.50×10-4/℃)以达到调整的目的.适量的添加TiO2将Mg4Nb2O9陶瓷的烧结温度降低了约100℃,并增强了陶瓷的性能,微波介电性能与其密度呈线性关系.由于添加的TiO2与Mg5Nb4O15反应形成了(Ng,Ti)5(Nb,Ti)4O15第二相,使得TiO2对该陶瓷τf值的调整作用不显著.1300℃、5h烧结添加质量分数为2.5%的TiO2的Mg4Nb2O9陶瓷具有最佳的性能:εr=13.61,Q·f=196620GHz,τf=-5.04×10-5/℃.     

BaTi1-xSnxO3系铁电体的相变弥散与介电弛豫

用固相反应法制备了BaTi1-xSnxO3(0.15≤x≤0.30)系铁电陶瓷.研究了它们的介电常数与温度和频率的关系,发现BaTi1-xSnxO3经历了一个由单纯相变弥散铁电体到弛豫型铁电体的变化过程.数据分析表明,BaTi1-xSnxO3系铁电材料是否出现介电弛豫与最大介电常数值对应的温度Tm以上一段温度区间内的介电弥散程度存在对应关系.研究还发现,将交变测量电压由1 Vrms提高到20 Vrms时,可以使BaTi1-xSnxO3陶瓷的Tm向低温方向移动.