溅射——气体——聚集共沉积法制备金属／金属（介质）复合团簇镶嵌薄膜

提出了溅射－气体－聚集共沉积制备金属／金属（介质）复合团簇镶嵌薄膜的新方法，并利用该方法成功地在方华膜衬底上制备了系列Ｆｅ／Ａｇ及ＣａＦ２复合团簇镶嵌薄膜样品。透射电镜分析结果表明，样品中Ｆｅ（Ｃｕ）团簇都较好地镶嵌于Ａｇ（ＣａＦ２）基质中，其结构为两种材料的多晶共存形态。进一步分析发现，与块材相比，Ｆｅ／Ａｇ样品中Ｆｅ团簇晶格常数呈现出不同程度的收缩，而Ｃｕ／ＣａＦ２样品中Ｃｕ团簇晶格常数则呈现出不同程度的膨胀。运用附加压力的模型对该现象进行了解释。     

粉尘薄膜爆轰

与普通爆轰不同，粉尘薄膜爆轰波前氧化剂与燃料处于分离状态．由于激波作用下壁面燃料的注入才于壁面附近形成燃烧的粉尘云，燃烧释放的热使激波自持形成粉尘薄膜爆轰。本文在长2、8m，横截面20mm×20mm的方型水平激波管中对此类爆轰进行了实验研究．并根据作者建立的模型对其二维结构进行了数值模拟。     

薄Si膜对基底表面粗糙度的影响

利用ＺＹＧＯ光学干涉测量仪，散射积分测量法观测了光学元件表面均方根粗糙度．详细分析了薄Ｓｉ膜对基底均方根粗糙度的影响，由此认为薄膜并不总是复制基底表面的粗糙度，结果出现了薄膜降低表面粗糙度的现象．提出了一定厚度范围的薄Ｓｉ膜的表面粗糙度存在着一个稳定值的新设想．     

薄膜干涉型光学全通滤波器的设计与分析

设计并分析了用于多信道色谱补偿的薄膜Gires-Tournois干涉仪（GTI）型光学全通滤波（OAPF），讨论了反射镜的膜层结构对器件 的群延迟谱和反射谱的影响，。以及大角度入射引起的偏分离现象和幅度畸变现象，给出了单级和多级串拉OAPF的初步设计结果。     

Mathematical modeling of falling liquid film evaporation process

A mathematical model of evaporation process from a laminar falling liquid film on a vertical plate of constant temperature is presented. The model is developed with and without interfacial shear stress due to the vapor flow at the liquid film surface. The vapor pressure drop, vapor exit velocity and cooling rate are calculated for different liquid mass flow values. It is shown that lower liquid mass flow produces higher cooling rate. The results also show that the interfacial shear stress has a considerable negative effect on the cooling rate. It is proved that there exists an optimum distance between the plates, which gives the maximum volumetric cooling rate.     

低银医用X光胶片的研制

对几种增黑剂进行了筛选实验研究，选用了两种增黑剂组合使用，提高了遮盖力，使医用Ｘ光胶片涂布银量由原业的９ｇ／ｍ２降到了６．８ｇ／ｍ２，与美国医用Ｘ光胶片涂布银量（６．７ｇ／ｍ２）相当，照相性能不低于国产医用Ｘ光胶片。     

空气中烧成的镍导体及其应用

将空气中烧成的镍导体用于散热制冷片制作工艺中，可降低成本，提高合格率。通过实验得到的最佳值为：镍导体中４号玻璃（ＳｉＯ２＞３０，Ｂ２Ｏ３＞１０，ＰｂＯ＜５５，ＴｉＯ２少许）的含量４．５％，化学镀镍时间５０ｍｉｎ，方阻４７．５ｍΩ／□，附着力８．１Ｎ／ｍｍ２。     

钛酸铅系薄膜的热释电性能及其应用

叙述了钛酸铅系薄膜的热释电原理，介绍了国际上近几年钛酸铅系薄膜材料、制备工艺及热释电性能，并与块状陶瓷材料进行了比较，分析表明钛酸铅系薄膜具有优良的热释电性能及可观的应用前景。     

Improvement of the optical properties of electrodeposited CuInSe2 thin films by thermal and chemical treatments

Cu, In and Se have been codeposited in thin films by potentiostatic one-step electrodeposition. The as-deposited material has shown direct optical transitions attributable to the CuInSe₂ semiconductor, but also additional absorption corresponding to another semimetallic phase. The secondary phases are selenium and copper selenide compounds which have been determined by composition measurements. In order to eliminate the semimetallic phases and to improve the semiconductor behaviour of the electrodeposited material, thermal and chemical treatments have been performed. After heat-treatment of the samples at 400°C in flowing argon, elemental selenium loss has been detected together with an enhancement of the allowed direct optical transition. The subsequent chemical etching of the layers in a KCN solution has showed to be successful in eliminating the copper selenide phases which were responsible of the remaining sub-bandgap absorption.