均匀设计试验方法及其在Ni-P-MoS2化学镀上的应用

均匀设计是基于试验点在整个试验范围内均匀散布的一种试验设计方法。介绍了该法的特点及其软件的基本功能与基本操作过程。从均匀设计试验方案的建立、试验结果的回归分析及优化、镀液最佳配方的试验验证3个方面介绍了均匀设计法在Ni-P-MoS2化学复合镀中的应用，并得到了最佳的Ni-P-MoS2化学复合镀液配方。该法应用于化学镀的工艺试验，简便可行。     

离子束增强沉积薄膜合成及其在材料表面优化中的应用

作者在多年实验工作的基础上，论述了离子束增强沉积薄膜合成及其在材料表面优化中的应用、所用设备、膜的合成、表面优化技术与机理，并展望了前景。     

Behaviour of self-cleaning glass in urban atmosphere

In order to analyse the self-cleaning mechanism of TiO₂-coated window float glass, a field experiment was conducted in Paris, at a site representative of background urban pollution. Two hydrophilic photocatalytic TiO₂-coated industrial glasses and a traditional float glass (reference) were exposed in unsheltered and sheltered condition for various time duration. The sheltered exposure allowed to study the soiling and self-cleaning mechanism without the disturbing effect of rain washing. In parallel, air filtrations were carried out in order to assess the chemical composition of airborne particulate.     

流量比对等离子体基团分布和薄膜结构的影响

使用光强标定的发射光谱(AOES)测量了CHF3／C6H6混合气体的微波电子回旋共振(ECR)放电等离子体中基团的分布状态。实验发现随着CHF3流量的增加，成膜基团CF、CF2、CH等的相对密度增大，而刻蚀基团F的密度也会增加，从而使得a—C：F薄膜的沉积速率降低。同时红外吸收谱(IR)分析表明，在高CHF3流量下沉积的a—C：F薄膜中含有更高的C—F键成分。可见在a—C：F薄膜的制备中CHF3／(CHF3 C6H6)流量比是重要的控制参量。     

水合肼和次磷酸钠为还原剂的化学镀Ni-P合金研究

铜上化学镀Ni-P合金通常需要用钯催化剂或其它无钯催化剂催化后才能施镀,研究了利用水合肼为引发剂,以水合肼和次磷酸钠为还原剂的化学镀Ni-P合金液,在铜箔上直接施镀,铜箔无须镀前催化。利用扫描电镜和X-射线衍射仪研究了镀层的表面形貌,利用能谱仪测定了镀层中P含量,同时研究了水合肼和次磷酸钠的浓度对镀速和P含量的影响,探讨了无催化铜箔化学镀Ni-P合金的反应机理。     

装载比对化学镀镍-磷合金的影响

以镀速、镀层中磷的质量分数和稳定常数为评价指标,在保持镀液组成和工艺条件不变的情况下,考察装载比对化学镀镍工艺的影响。结果表明:镀速随装载比的增加而降低;镀层中磷的质量分数随装载比的增加而增大;稳定常数在80%～94%之间波动;当装载比为1.5dm2/L时,镀液得到充分利用。     

钕铁硼化学镀防护及在模拟海洋大气环境中的腐蚀行为

采用化学镀方法在钕铁硼表面分别制备Ni-P合金镀层、Ni-Mo-P合金镀层、Ni-P/PTFE复合镀层和Ni-Mo-P/PTFE复合镀层,并研究了不同化学镀层在模拟海洋大气环境中的腐蚀行为。结果表明:Ni-P合金镀层、Ni-Mo-P合金镀层、Ni-P/PTFE复合镀层和Ni-Mo-P/PTFE复合镀层都完整覆盖钕铁硼表面,它们的粗糙度差别不大,在模拟海洋大气环境中的腐蚀失重都低于钕铁硼的腐蚀失重,容抗弧半径增大且电荷转移电阻有不同程度的提高。与Ni-P合金镀层和Ni-Mo-P合金镀层相比,Ni-P/PTFE复合镀层和Ni-Mo-P/PTFE复合镀层具有优良的耐腐蚀性能,原因在于PTFE颗粒较均匀的沉积在镀层表面增加一道屏蔽层,也起到阻碍腐蚀介质渗透腐蚀的作用。尤其是Ni-Mo-P/PTFE复合镀层,其表面更致密,PTFE颗粒沉积更均匀,能更有效延缓腐蚀介质与钕铁硼接触,显著提高钕铁硼在模拟海洋大气环境中的耐腐蚀性能。     

裂解硒技术及在CIGS薄膜太阳电池中的应用

普通Se源提供的硒蒸气主要由活性较低的Sen大原子团构成(n≥4),这不利于生长高质量的CIGS薄膜。理论计算表明,等离子体裂解Se蒸气技术和热裂解Se蒸气技术均可以提供足够的能量使Sen大原子团裂解为高活性的Se2或Se。实验证明,裂解Se技术显著降低了CIGS薄膜生长过程中Se原料的使用量。高化学活性的硒蒸气使生长CIGS薄膜的动力学过程发生变化,显著改善了低温沉积CIGS薄膜性质,在一定程度上提高了相应的电池性能。因此,裂解Se蒸气技术在聚酰亚胺(PI)衬底CIGS薄膜太阳电池的研究及组件产业化领域具有很好的应用前景。     

Chemical-mechanical polishing of SiO2 thin films studied by X-ray reflectivity

Specular X-ray reflectivity from SiO₂ thin films prepared on silicon substrates by plasma-enhanced chemical vapor deposition showed the films to have a characteristic width of the decay in density at the free surface of 17 Å, to be about three-quarters the density of -quartz, and to have an interfacial layer at the silicon interface that was of the order of 100 Å wide and less dense than the bulk of the film. After chemical-mechanical polishing the characteristic width of the decay in density at the free surface was reduced to 10 Å; furthermore, the near-surface region to a depth of 30 Å had a greater density than the as-deposited film. Off-specular reflectivity confirmed that the decrease in characteristic width at the free surface was due to reduced roughness upon polishing and also revealed that the lateral correlation length in the limit of long wavelengths was the same for both polished and unpolished samples. The compression of the near-surface region during polishing is believed to enhance the dissolution of SiO₂ into the slurry which is necessary to achieve smooth surfaces.     

Multiple microscale plasma CVD apparatuses on a substrate

Plasma chemical vapor depositions (CVD) of carbon films using a CH₄---H₂ gas system have been performed with a prototype 2×2 plasma chip which consists of 2×2 coplanar film electrodes (CFE). Using this chip, we could perform four plasma processing experiments simultaneously. A plasma chip on which plasma-processing apparatuses are integrated has advantages in plasma processing compared to conventional ones, such as high processing speed due to the high density of the microscale plasma, and high efficiency due to parallel processing. We have obtained various carbon films easily, such as glassy carbon and diamond-like carbon, with this simple prototype plasma chip. This is the first report on plasma processing with this innovative processing device, the plasma chip.