Selective Coating of SnS on the Bio‐Inspired Moth‐Eye Patterned PEDOT:PSS Polymer Films

A new strategy for the selective coating of tin sulfide (SnS) on the surface of moth‐eye patterned (MEP) conducting polymer film is studied by considering the optical properties of the antireflective moth‐eye pattern and flexibility of polymer films. The semiconductor SnS is selectively coated on the surface of MEP microdomes of poly(3,4‐ethylenedioxythiophene) poly(styrene‐sulfonate) (PEDOT:PSS) film. The SnS coated MEP film is obtained by using pore selectively SnS thin layer functionalized polystyrene honeycomb‐patterned porous (HCP) film as a template. Aqueous PEDOT:PSS solution is poured on the SnS functionalized HCP films and detached for the fabrication of SnS coated MEP films. The films show a satisfactory photo‐responsive property under solar stimulated light illumination due to the antireflective MEP structure of PEDOT film and homogenous SnS coating on the surface of the conducting polymer.     

Quantitative investigation of electromechanical coupling of potassium sodium niobate-based thin films

High-performance environment-friendly piezoelectric potassium sodium niobate (KNN)-based thin films have been emerged as promising lead-free candidates, while their substrate-dependent piezoelectricity faces the lack of high-quality information due to restraints in measurements. Although piezoresponse force microscopy (PFM) is a potential measuring tool, still its regular mode is not considered as a reliable characterization method for quantification. After combining machine-learning enabled analysis using PFM datasets, it is possible to measure piezoelectric properties quantitatively. Here we utilized advanced PFM technology empowered by machine learning to measure and compare the piezoelectricity of KNN based thin films on different substrates. The results provide a better understanding of the relationship between structures and piezoelectric properties of the thin films.     

Mechanical properties of graphene films enhanced by homo-telechelic functionalized polymer fillers via π–π stacking interactions

Most researches on graphene/polymer composites are focusing on improving the mechanical and electrical properties of polymers at low graphene content instead of paying attention to constructing graphene’s macroscopic structures. In current study the homo-telechelic functionalized polyethylene glycols (FPEGs) were tailored with π-orbital-rich groups (namely phenyl, pyrene and di-pyrene) via esterification reactions, which enhanced the interaction between polyethylene glycol (PEG) molecules and chemical reduced graphene oxide (RGO) sheets. The π–π stacking interactions between graphene sheets and π-orbital-rich groups endowed the composite films with enhanced tensile strength and tunable electrical conductivity. The formation of graphene network structure mediated by the FPEGs fillers via π–π stacking non-covalent interactions should account for the experimental results. The experimental investigations were also complemented with theoretical calculation using a density functional theory. Atomic force microscope (AFM), scanning electron microscope (SEM), X-ray diffraction (XRD), nuclear magnetic resonance (NMR), thermal gravimetric analysis (TGA), UV–vis and fluorescence spectroscopy were used to monitor the step-wise preparation of graphene composite films.     

Preparation and characterization of Fe‐Tetranitro phthalocyanine/polyurethane blends

In this article, Fe‐Tetranitro phthalocyanine (Fe‐TNPc)/polyurethane (PU) blends were prepared by solution blending. The mechanical properties of the samples were studied by tensile tests. The results showed that the tensile strength and the elongation at break of the samples increased with increasing Fe‐TNPc content. The improved mechanical properties for the samples containing Fe‐TNPc was attributed to the increased microphase separation degree of PU, which was further investigated by dynamic mechanical analysis (DMA) and Fourier transform infrared analysis. The lower T_g of the soft segments and the higher T_g of the hard segments for the samples containing Fe‐TNPc indicated an increase of microphase separation degree of PU. The increased hydrogen bonded carbonyl groups in the samples with increasing Fe‐TNPc content also proved the conclusion. Quantitative evaluation of the interaction between Fe‐TNPc and PU was also investigated by analyzing the physical crosslinking density of the samples. The results indicated that the physical crosslinking density of the samples increased with increasing Fe‐TNPc content. The antibacterial properties of the samples were investigated. The results showed that the percentage bacterial inactivation toward S. aureus and E. coli of the samples were 98.9% and 90.9%, respectively, when Fe‐TNPc was added to 1%. © 2014 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2015 , 132, 41284.     

High-Tg porous polyimide films with low dielectric constant derived from spiro-(adamantane-2,9′(2′,7′-diamino)-fluorene)

Porous polyimide (PI) films with low dielectric constants and excellent thermal properties have been a pressing demand for the next generation of high-performance, miniature, and ultrathin microelectronic devices. A series of novel porous PI films containing fluorenyl-adamantane groups were prepared successfully via thermolysis of poly(ethylene glycol) (PEG) added in the PI matrix. The cross-sectional morphologies of porous PI films showed closed pores with diameters ranging from 135 to 158 nm, which were uniform and regular in shape without interconnectivity. These porous PI films exhibited excellent thermal properties with a glass-transition temperature at 376 °C whereas the 5% weight loss temperature in air excess of 405 °C due to enhanced rigidity afforded by fluorenyl-adamantane groups. Accompanied by thermolysis content of PEG increasing from 0 to 20 wt %, the density of porous PI films decreased, and the corresponding porosity grew significantly from 0 to 11.48%. Depending on porosity, the dielectric constant and dielectric loss of porous PI films significantly declined from 2.89 to 2.37 and from 0.050 to 0.021, respectively. These excellent properties benefit the as-prepared porous PI films for application as interlayer dielectrics, integrated circuit chips, or multichip modules in microelectronic fields. © 2018 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2019 , 136, 47313.     

Study of the effect of BDMA catalyst in the epoxy novolac curing process by isothermal DSC

Epoxy novolac/anhydride cure kinetics has been studied by differential scanning calorimetry under isothermal conditions. The system used in this study was an epoxy novolac resin (DEN431), with nadic methyl anhydride as hardener and benzyldimethylamine as accelerator. Kinetic parameters including the reaction order, activation energy and kinetic rate constants, were investigated. The cure reaction was described with the catalyst concentration, and a normalized kinetic model developed for it. It is shown that the cure reaction is dependent on the cure temperature and catalyst concentration, and that it proceeds through an autocatalytic kinetic mechanism. The curing kinetic constants and the cure activation energies were obtained using the Arrhenius kinetic model. A suggested kinetic model with a diffusion term was successfully used to describe and predict the cure kinetics of epoxy novolac resin compositions as a function of the catalyst content and temperature. Copyright © 2003 Society of Chemical Industry     

新型壳聚糖/纳米二氧化硅杂化材料的制备与性能

在纳米S iO2颗粒表面引入羟丙基氯活性基团,得到功能化S iO2颗粒,再将羟丙基氯化的S iO2颗粒交联固定在壳聚糖上,制备了一种新型的壳聚糖/纳米S iO2杂化材料(简称杂化材料);通过傅里叶变换红外光谱、透射电镜、扫描电镜方法对杂化材料进行表征,采用热重(TG)分析研究杂化材料的热性能;考察了杂化材料的沉降速率和对金属离子Ca2+和M g2+的吸附能力。电镜分析结果表明,杂化材料微粒为纳米尺度的无机S iO2加强化的微粒,S iO2颗粒分散在材料中,形成均匀的表面;TG分析结果表明,杂化材料的热性能有所提高;沉降实验测得壳聚糖和杂化材料作为吸附剂的沉降时间分别为130.3,68.5s,表明杂化材料的沉降速率比壳聚糖的沉降速率快了近一倍;杂化材料对金属离子Ca2+和M g2+的吸附量分别可达到0.289 3,1.445 6mm ol/g。     

Silicon for thin-film transistors

We are standing at the beginning of the industrialization of flexible thin-film transistor (TFT) backplanes. The two important research directions for the TFTs are (i) processability on flexible substrates and (ii) sufficient field-effect mobilities of electrons and holes to support complementary metal insulator semiconductor operation. The most important group of TFT capable semiconductors are the several modifications of silicon films: amorphous, nanocrystalline and microcrystalline. We summarize their TFT properties and their compatibility with foil substrate materials.