中国光纤通信技术的研究、应用和发展

主要从光纤光缆、光器件与组件、光传输设备与系统、光网络建设等方面论述光纤通信技术在我国的研究、应用发展历程，并对我国光纤通信技术的未来发展进行展望。     

SiCf/SiC陶瓷复合材料的研究进展

SiCf/SiC陶瓷复合材料具有良好的力学性能、高温抗氧化性和化学稳定性，是航空航天和原子能等领域理想的新一代高温结构材料。本文概述了增强体SiCt的发展状况及存在的问题，对SiCt/SiC材料的制备工艺、界面相的研究状态、材料的损伤破坏机理和目前的应用研究进展做了综述，并分析了SiCf/SiC陶瓷复合材料的研究重点和发展前景。     

针对混合应用业务的ARQ改进方案

在高速无线通信中,自动请求重传(ARQ)是链路层不可缺少的技术,它通过重传向上层屏蔽无线链路上包的丢失。随着无线网络的发展,无线传输速率不断提高,应用的业务类型也越来越广泛。目前,众多ARQ技术的研究都集中在如何提高该技术的确认效率,以适应更高的传输速率,但鲜有研究着手于如何使ARQ能够更好地应用于混合业务环境。针对混合业务环境下的ARQ改进提出了2种方案,并给出其中1种在实际应用中的改善效果。     

光纤接入网步入快速发展期

光纤接入一直是多年来人们不断追求的梦想和探索的技术方向，但由于成本、技术、需求等方面的障碍，至今还没有得到大规模推广与发展。然而，这种局面最近有了很大的改观，出现可迅速发展的势头。主要是因为一些国家政策的扶持、运营商竞争的需要、对收入的追求，以及设备本身价格的下降，光纤接入技术由于各种原因，至今尚未在全球广泛应用，但在日本、美国、瑞典和意大利等国都获得了较多的应用。在中国，光纤接入也有了良好的开端，将在大城市广泛应用，并逐渐推广到全国。     

Optical properties of Nd-doped Ca3(VO4)2 single crystal fiber

Optical absorption and photoluminescence of Ca₃(VO₄)₂ single crystal grown by a floating-zone technique and containing Nd³⁺ ions were investigated. High absorption coefficients and broadening of most absorption bands are present at 300 K, while substructures in some of the same bands can be evidenced at 12 K. Most features of measured spectra are characteristic of random occupation of more than a single Ca²⁺ site by the Nd³⁺ ion and of distortions provoked by different charge compensation mechanisms involving oxygen vacancies promotion in the crystal lattice. Nd³⁺ optical properties were studied by using the Judd-Ofelt theory to calculate the spectral parameters relevant for laser applications.     

高入纤功率光纤通信系统的可靠性研究

掺铒光纤放大器(EDFA)和拉曼放大器(FRA)的使用,使得光纤通信系统中的入纤功率有了很大的提高.较高的入纤功率不仅会在光纤中引起各种非线性效应,对光脉冲的传输产生影响,也会对光纤本身的可靠性产生影响,为此介绍了高入纤功率对光纤系统的影响,分析了其产生的机理,并提出了应对措施.     

无线网状网技术与应用

无线网状网(WMNs)由网状路由器节点和客户机节点组成,其中的网状路由器节点组成了无线网状网的网络骨干,其移动性很小。他们一起为无线网状网和其他常规无线网络的客户机节点提供网络的无线接入。WMNs技术结合了中心式控制的蜂窝网与分布式控制的无线自组织网的优点,可有效克服这两种技术的缺陷并显著提高无线网络的性能,已经成为下一代无线通信网络的研究热点之一。WMNs可为无线个域网、局域网、校园网、城域网的一系列应用提供高速无线宽带接入服务。虽然目前WMNs技术发展很快,但其协议栈各层仍存在许多有待研究的课题。首先简要介绍了无线网状网的结构与特点;随后重点分析了其主要的几个应用领域;最后探讨了WMNs各协议层的研究现状与关键技术,并分析了该技术存在的问题及未来的研究方向。     

HART协议物理层设备的测试（II）

本文介绍HART协议物理层设备的测试要求、测试设备、测试方法及测试时的一些特别说明。     

W‐band physical layer design issues in the context of the DAVID–DCE experiment

This paper aims at focusing on the aspects concerning the physical layer design for an innovative satellite communication experiment. Such an experiment, denoted by the acronym DAVID–DCE (Data and Video Interactive Distribution—Data Collection Experiment) is based on the exploitation of the W‐band (75–110 GHz) for high‐bit‐rate satellite transmission. The potential advantages of using of the W‐band are mainly related to the great bandwidth availability, and to the absence of interference. Moreover, an expected result of the experiment is a substantive improvement in the communication system's performances in the presence of meteorological phenomena (e.g. rain) as compared with the more conventional Ka‐band satellite transmission. On the other hand, problems to be faced concern the non‐ideal behaviours of hardware devices employed for high‐frequency digital transmission. In particular, carrier recovery and timing recovery are the most crucial signal‐processing tasks to be carefully considered in the design of the physical level of the system, because they considerably suffer from hardware impairments. The purpose of this work is to illustrate the proposed solutions in terms of the most critical modulation, demodulation and synchronization design issues, together with the effects of non‐ideal behaviours of hardware components on BER performances. Copyright © 2004 John Wiley & Sons, Ltd.     

Optical and structural properties of MOVPE grown GaxIn1−xAs/InP strained multiple quantum well atructures

This paper presents a study of the structural and optical properties of strained GaInAs/ InP multiple quantum well (MQW) structures fabricated by LP-MOVPE. The composition of the Ga _x In_1−x As films ranged fromx = 0.17 tox = 1.0 and was determined by sputtered neutral mass spectrometry (SNMS) on thick layers. The structures of the MQW samples with well widths from 1.5 to 5 nm were investigated by high resolution x-ray diffraction (HR-XRD). Simulations of the diffraction patterns showed that transition layers of approximately 2 monolayer (ML) thickness with high lattice mismatch exist at the interfaces. Photoluminescence (PL) measurements indicate well widths of a multiple of a monolayer with local variations of one monolayer. The PL peak energies vary smoothly with the Ga concentration. These results were confirmed by optical absorption measurements.