考虑冷变形加工硬化的翻边力理论计算

在分析现有计算公式存在不足的基础上,根据翻边变形区材料的应力应变特点,考虑了冷变形加工硬化(取幂函数硬化规律)和变形区材料厚度变化(翻边为变薄)两个因素的影响,利用金属塑性成形问题求解理论中的主应力法,推导和提出了圆孔翻边力计算的一个新公式.通过用钢板(SPCC)和铜板(T1)进行了翻边工艺试验的验证,并与经验公式和现有理论公式的计算结果进行了比较,表明新公式计算结果能接近于实际,且原理上更为科学合理.     

一种光纤陀螺随机漂移的高精度建模方法

为减小光纤陀螺随机漂移,采用时间序列分析法对其进行ARMA模型辨识.提出一种全局最优的模型阶次搜索算法,将模型适用性检验方法中的BIC(Bayesian information criterion)用于模型阶次搜索,并采用Pandit-Wu建模思想,把二维搜索化为一维搜索,得到了模型阶次的一致性估计.提出了一种改进的U-C算法,并与长自回归模型计算残差法相结合共同估计模型参数.它将非线性参数估计过程转化为线性过程,使用了正置与逆置漂移时序参与估计,以前向和后向模型的滤波误差平方和最小为参数估计的指标,在p+1维空间中求极小值.采用上述方法确定的模型其残差标准差为0.002 4°,最大预报误差为0.011 2°,能准确预报光纤陀螺随机漂移趋势.     

壁湍流周期性吹吸减阻的实验研究

为了研究局部周期性吹吸小扰动对湍流边界层的影响和湍流相干结构减阻控制机理,用实验方法研究了局部周期性吹吸小扰动与湍流边界层的相互作用.采用热线测速技术精细测量了施加吹扰动前后平板湍流边界层不同法向位置的流向、法向和展向速度分量的时间序列信号;通过测量扰动源下游近壁区域平均速度剖面的变化,发现在扰动下游一定空间范围内,粘性底层增厚和壁面减阻;通过对湍流度变化的分析,发现扰动影响猝发的发生;此外通过对展向平均涡量变化的分析发现,在扰动下游形成了2个定常的、强度相似的、大尺度的展向涡,它们起到流体滚动轴承的作用,减小了壁面摩擦阻力.     

基于改进PSO算法的自适应均衡算法

传统的自适应均衡算法存在收敛速度慢,稳定性差、均衡效果不理想等缺点,从而使自适应均衡器在高速光纤通信系统中的应用受到限制.具有梯度搜索因子的Grads-PSO算法,结合了传统数值优化方法在计算速度和计算精度上的优势,将梯度法引入粒子群算法中.在梯度搜索因子的指导下,PSO算法的运算过程显得更加有规则,从而提高了算法的收敛速度和运算精度.因此,本文提出将改进PSO算法用作自适应均衡器均衡算法.通过仿真实验表明,改进PSO算法具有收敛速度快,计算精度高的优点,将其作为自适应均衡器的控制算法可收到很好的均衡效果,优于传统的控制算法.     

光源谱宽通过光纤色散对AOCS输出的影响

基于光纤色散引起的脉冲展宽效应,在理论和实验上研究了有源光学电流传感器（AOCS）中宽带光源对系统输出的影响．理论结果表明：对于长度为500m的光纤,当光源谱宽在40—60nm之间变化时,多模光纤传输下的脉冲展宽范围在0．5～0．8ns,单模光纤传输下的脉冲展宽范围在2×10^-5～4×10^-5,信号衰减量对系统输出影响很小,且随光源谱宽的增加而有微弱的增加,实验与理论相符合．     

基于光纤像面全息的金属构件微位移测量

针对激光全息技术能处理常规方法难以解决的问题以及光纤具有环境适应性的特点,设计了一种基于光纤像面全息干涉计量对金属材料构件微小位移测量的方法.通过对不同芯径传像光纤束情况下的成像结果分析,得出了与材料力学相符合的结论.实验结果表明,提出的方案适用于对金属材料特性的高精度测量,可以解决阻碍激光全息技术推广应用和发展的环境要求.     

不同线密度粘胶原丝及其碳纤维的结构性能对比

用Weibull分析处理 10mm长的 4种不同线密度粘胶原丝和相应碳纤维的单丝断裂强度 ,得到原丝线密度、强度分布和碳纤维强度的对应关系。采用透射电镜 (TEM )和小角X散射 (SAXS)分析粗旦原丝 ,发现孔洞较多 ,并存在大于 70nm的大孔洞。截面和表面照片也揭示出细旦原丝截面相对规整 ,表面较光滑 ,粗旦原丝则反之。结果表明 ,原丝线密度小 ,截面形状圆整 ,缺陷少 ,所制得的碳纤维强度高。     

Effects of coagulation bath temperature on structure and performance of poly （vinyl butyral） hollow fiber membranes via thermally induced phase separation

Poly （vinyl butyral） （PVB） hollow fiber membranes were fabricated via thermally induced phase separation （TIPS）. The effects of coagulation bath temperature （CBT） on the structure and performance of membranes were investigated in detail. The morphologies of the membranes were studied by scanning electron microscopy （SEM）, the performances of water permeability, rejection, breaking strength and elongation were measured, respectively. The results indicate that all the membranes have the asymmetric morphology and the thickness of the skin layer decreases and the pore size of the outer layer increases with the increase of CBT. The permeability of membranes prepared at air gap 1.0 cm and take-up speed 0.253 m/s increases from 1.047×10-7 to 5.909×10-7 m3/（m2·s-kPa） with the CBT increasing from 20 ℃ to 40℃, and sharply increases to 35.226×10 7 m3/（m2.s.kPa）once the CBT arrives at 50 ℃. While the carbonic ink rejections have no significant decrease, totally exceed 98%, but that of acid-maleic acid copolymer greatly decreases with the increase of CBT. Both the breaking strength and elongation decrease with the increase of CBT.     

Effects of coating thickness and residual stresses on the bond strength of ASTM C633-79 thermal spray coating test specimens

Wire-arc-sprayed nickel-aluminum is widely used in the aircraft industry for dimensional restoration of worn parts and as a bond coat for thermal barrier coatings and other top coats. Some repair applications require thick coatings, which often result in lower bond strength. A mechanism being investigated to ex-plain this decrease in bond strength is the free edge effect, which includes both coating residual stresses and coating thickness. The layer-removal method was used to determine experimentally the residual stresses in wire-arc-sprayed nickel-aluminum coatings of different thicknesses. Bond strength evalu-ations were performed using an improved ASTM C 633-79 test specimen. Finite-element analysis and fracture mechanics were used to investigate the effects of coating thickness and residual stress state on coating bond strength.     

Oxide formation during etching of gallium arsenide

Characterisation of n-type GaAs, etched in a 5:1:1 mixture of H₂SO₄:H₂O₂:H₂O, was performed using X-ray photoelectron spectroscopy (XPS) and electrochemical AC impedance. Quantitative XPS analysis of GaAs indicated that the as-received wafers had a gallium-rich native oxide which was not affected by solvent degreasing treatments. Subsequent, oxidative etching formed a thinner arsenic-rich oxide. It is suggested that etching causes initial thinning of the native oxide; subsequently, transport of Ga and As ions occurs through the film by high-field ionic conduction. Arsenic enrichment in the resultant oxide film arises from the greater mobility of Ga³⁺ ions compared with As³⁺ ions as well as the relative solubility of Ga₂O₃ compared with As₂O₃. The as-received oxide film thickness, determined from the ratio of the oxide to substrate XPS peaks, was approximately 1.1 nm. After etching this was reduced to about 0.7 nm. This thickness is consistent with the driving voltage for oxide formation being provided by the electrochemical potential difference between hydrogen peroxide and the GaAs wafer (i.e. between 0.4 V, for As, and 1.2 V, for Ga, at a nm V⁻¹ ratio of 2). Capacitance measurements, derived from electrochemical impedance data, combined with film thickness data, gave a value of about 5 for the dielectric constant of As₂O₃.