Dynamics of Solidification in 2% Corn Starch-Water Mixtures: Effect of Variations in Freezing Rate on Product Homogeneity

Directional solidification studies of gelatinized corn starch-water mixtures were undertaken in order to examine, in situ, the freezing behavior of this food model. The solidification rate was controlled by varying sample cell velocity as it moved from a 25°C hot stage to a -25°C cold stage. While freezing at cell velocities ≤7.5 μm/sec, starch granules were alternately pushed or entrapped by the advancing solid-liquid interface producing a segregated structure consisting of alternating high-starch and low-starch bands. At a cell velocity of 10 μm/sec, the frozen product was homogeneous. The relationship between the solid-liquid interface velocity and segregation behavior was quantified and compared to an existing model of particle-interface interactions.     

Kinetic analysis of the crystallization of poly(p-phenylene sulphide)

Growth rates of spherulites were measured in poly(p-phenylene sulphide) crystallized from the melt and the quenched glass over the temperature range 100°C–280°C, possibly the most extensive overall range yet reported for any polymer and, as such, most propitious for study of régime III crystallization. For a medium M.wt. polymer, a régime II → III transition was obtained at 208°C using values of transport parameters common to many polymers ($\text{U1 = 1400}\text{cal mol}{}^{\mathrm{?1}}$, T_∞ ? T_g = 30°C) together with experimentally determined values of T⁰_m(315°C) and T_g(92°C). Under these conditions, the régime III/II slope ratio was found to be 2.07 (i.e. only 3.5% higher than predicted by régime theory), and reasonable estimates of surface free energies and of the work of chain folding were obtained. Other choices of the transport terms, including WLF and zero values, did not allow successful kinetic analyses. Although a régime I → II transition is predicted to occur at the high-temperature end of our growth-rate data, we found no experimental evidence for it. For a low M.wt. polymer, our analysis showed that régime III kinetics is obeyed at low temperatures, while at higher ones there is a continuous departure from that behaviour without, however, full attainment of régime II kinetics.     

Melting and crystallization behaviour of elastoplastic semicrystalline copolymers: poly(ether ester)

The melting and crystallization behaviour of an elastoplastic semi-crystalline poly(etherester) has been studied by differential scanning calorimetry. The shape of the melting endotherm is strongly dependent on heating rate and annealing time and results from the sum of simultaneous melting and crystallization phenomena. Samples prepared by different techniques, i.e. by solvent evaporation or by melt extrusion, behave very differently owing to specific crystal morphologies. By applying the Hoffman-Weeks plot, the equilibrium melting temperature has been extrapolated. The Avrami treatment allows the calculation of the index n and of the rate constant K from the isothermal kinetic data.     

1000m~3/h空分设备板翅式换热器带水冻堵故障处理

介绍 10 0 0m3 /h空分设备板翅式换热器循环水加杀菌剂产生泡沫 ,引起空冷塔雾沫夹带而严重带水冻堵的故障现象、原因及处理措施 ,并指出运行中的不足。     

机械合金化Zr-Al-Ni-Cu-Ag非晶合金的晶化行为

研究了机械合金化非晶态Zr65Al7.5Ni10Cu7.5Ag10合金的晶化过程，由于存在扩散不均匀区，机械合金化非晶合金在深过冷液相区的退火组织不同于快淬合金，在深过冷液相区退火，析出二十面体准晶相及一些知相：在靠近第一个放热峰的温度退火，近出Zr2Cu相：第二个放热峰对应残余非晶相及准晶相向Zr2Ni,Zr2-Al3的转变。     

钙铁硅铁磁体微晶玻璃热处理制度的研究

使用XRD、DTA、VSM等分析测试手段对在还原气氛下含少量B2O3、P2O5钙铁硅微晶玻璃的热处理制度进行了较深入的研究。研究发展，预核化处理对于钙铁硅微晶玻璃的晶化无明显作用。900℃作为钙铁硅微晶玻璃的晶化温度较适宜，晶化时间宜8h以上。     

非晶Sm5Fe74.3Nb1.5Si11.7B4.5C2.5Cu0.5合金经预退火后的晶化动力学的DTA研究

研究了非晶Sm5Fe74.3Nb1.5Si11.7B4.5C2.5Cu0.5合金经400℃，保温10min预退火后的晶化动力学。结果表明；该合金的晶化相为α-Fe固溶体和Sm2Fe17Cx金属间化合物，两相的晶化表观激活能分别为557KJ/mol和514KJ/mol，当晶化体积分数为60%时，α-Fe相的晶化激活能达极大值；Sm2Fe17Cx相晶化激活能则随其晶化体积分数的增加而逐渐减小。     

Effect of pretreatments and freezing rate on the firmness of potato tissue after a freeze–thaw cycle

The texture of potato tissue after a freeze–thaw process using different freezing rates and different pretreatments was analysed, in order to select the best strategy for optimum preservation of the textural characteristics of pre‐frozen potato. Ten blanching conditions were tested and a two‐step blanching process with calcium chloride (0.07 g mL^?1) proved the most effective in protecting the tissue after a freeze–thaw process (maximum load force around 10–55% of the raw tissue, depending on potato batch, for air‐blast freezing and 20–60% for immersion freezing). Vacuum impregnation at 100 and 400 mbar, even when followed by different pre‐drying treatments to remove excess water, was very detrimental to resistance to a freeze–thaw process (maximum load force below 10% of the raw tissue for air‐blast freezing and below 20% for immersion freezing). Microstructure analysis confirmed better tissue integrity retention with ethyleneglycol immersion freezing instead of air‐freezing. Differences were found between batches with a 6‐month difference in storage time, indicating that the fresher batch was more suitable for freezing.     

Formation of low-resistivity poly-Si and SiNx films by Cat-CVD for ULSI application

In this paper, bulk-Si metal–oxide–semiconductor field effect transistors (MOSFETs) are fabricated using the catalytic chemical vapor deposition (Cat-CVD) method as an alternative technology to the conventional high-temperature thermal chemical vapor deposition. Particularly, formation of low-resistivity phosphorus (P)-doped poly-Si films is attempted by using Cat-CVD-deposited amorphous silicon (a-Si) films and successive rapid thermal annealing (RTA) of them. Even after RTA processes, neither peeling nor bubbling are observed, since hydrogen contents in Cat-CVD a-Si films can be as low as 1.1%. Both the crystallization and low resistivity of 0.004 Ω·cm are realized by RTA at 1000 °C for only 5 s. It is also revealed that Cat-CVD SiN_x films prepared at 250 °C show excellent oxidation resistance, when the thickness of films is larger than approximately 10 nm for wet O₂ oxidation at 1100 °C. It is found that the thickness required to stop oxygen penetration is equivalent to that for thermal CVD SiN_x prepared at 750 °C. Finally, complementary MOSFETs (CMOSs) of single-crystalline Si were fabricated by using Cat-CVD poly-Si for gate electrodes and SiN_x films for masks of local oxidation of silicon (LOCOS). At 3.3 V operation, less than 1.0 pA μm⁻¹ of OFF leakage current and ON/OFF ratio of 10⁷–10⁸ are realized, i.e. the devices can operate similarly to conventional thermal CVD process.