纤维共晶生长界面前沿三维扩散场解析

修正Ｊａｃｋｓｏｎ和Ｈｕｎｔ关于在垂直生长方向截面上溶质扩散各向同性假设，求解三维Ｌａｐｏｌａｃｅ方程，获得纤维共晶生长界面前沿三维稳态扩散场，并证明Ｊａｃｋｓｏｎ和Ｈｕｎｔ的二维模型是实际生长的二维简化和一阶近似，并用丁二腈（ＳＣＮ）一梓脑（ＣＡＭ）纤维共晶系统计算生长界面前沿溶质分布。     

大尺寸氟化铅晶体的生长

描述了不用高真空条件，在通常的Ｂｒｉｄｇｍａｎ－Ｓｔｏｃｋｂａｒｇｅｒ炉中，用高温下的反应方法，消除了原料及生长炉内残存的Ｏ＾２－及ＯＨ＾－，生长出优质，大尺寸的β－ＰｂＦ２晶体。在晶体生长时，出现的主要问题是在晶体中的针状结构及开裂，但可通过控制条件来解决。     

Studies of photoconductivity in β-Apo-8′ carotenal

The photoconductive properties of a carotenoid polyene,β-Apo-8′ carotenal in polycrystalline form has been studied. The growth of the photocurrent shows an overshoot in the growth-time curve before steady state value is attained. This behaviour of photocurrent is proposed to be due to higher value of recombination coefficient than trapping coefficient. From the temperature dependence study it is observed that the steady state photocurrent, at first increases with increase of temperature, attains a maximum at a particular temperatureT _max and then decreases with temperature. TheT _max value agrees with the temperature above and below which steady state photocurrent is attained differently. Monomolecular and bimolecular recombination processes at two temperature regimes are proposed to account for the observed behaviour. The dependence of photocurrent with excitation light intensity and wavelength study provide information on the carrier generation processes. The fast decay of photocurrent have been observed at different temperatures and from this study the decay constant is calculated and it is found to be temperature independent.     

A computational model for analysing interactive buckling and delamination growth in composite structures

In this paper, a unified method is presented: (i) to model delaminated stiffened laminated composite shells; (ii) for synthesising accurate multiple post-buckling solution paths under compressive loading; and (iii) for predicting delamination growth. A multi-domain modelling technique is used for modelling the delaminated stiffened shell structures. Error-free geometrically nonlinear element formulations — a 2-noded curved stiffener element (BEAM2) and a 3-noded shell element (SHELL3) — are used for the finite element analysis. An accurate and simple automated solution strategy based on Newton type iterations is used for predicting the general geometrically nonlinear and postbuckling behaviour of structures. A simple method derived from the 3-dimensionalJ-integral is used for computing the pointwise energy release rate at the delamination front in the plate/shell models. Finally, the influence of post-buckling structural behaviour and the delamination growth on each other has been demonstrated.     

鱼类耳石扫描电镜样品制备与观察

本文介绍了一种鱼类耳石样品的扫描电镜制样方法，通过对草鱼耳石进行包埋，抛磨，并用合适的腐蚀剂处理，用ＳＥＭ成功地观察了耳石的日轮及超微结构，该方法简便易行，保证所观察耳石样品的微观结构完整与清晰。     

Morphological and kinetics study of PEO/PVC blends

The kinetics of spherulite radial growth and the morphology of the compatible system PEO/PVC have been studied by optical microscopy. The usual spherulite radial growth behaviour has been found for compatible blends with PEO content higher than 70%. For lower composition, distortion of the usual spherulite morphology has been observed; the anomalies have been attributed to partial miscibility of the components.     

Selective area epitaxy of CdTe

We have performed selective area epitaxy (SAE) of CdTe layers grown by molecular beam epitaxy using a shadow mask technique. This technique was chosen over other SAE techniques due to its simplicity and its compatibility with multiple SAE patterning steps. Features as small as 50 microns × 50 microns were obtained with sharp, abrupt side walls and flat mesa tops. Separations between mesas as small as 20 microns were also obtained. Shadowing effects due to the finite thickness of the mask were reduced by placing the CdTe source in a near normal incidence position. Intimate contact between the mask and the substrate was essential in order to achieve good pattern definition.     

An investigation of pore cracking in titanium welds

Two welded Ti-6A1-4V pressure vessels leaked prematurely in service. The leaks were caused by cracks emanating from weld porosity. The cracks originated during fabrication, with subsequent growth in service leading to the formation of the leak paths. Pore cracking is thought to be caused by a mechanism that involves both sustained-load and cyclic contributions, with the former being the more prominent. It is shown that the tendency for cracking is influenced by pore position and that pore size is not a deciding factor in that regard. The factors that govern pore cracking are discussed, and the possible role of interstitial embrittlement is assessed.     

Crystal orientation of β-phase isotactic polypropylene induced by magnetic orientation of N,N′-dicyclohexyl-2,6-naphthalenedicarboxamide

Melt crystallization of isotactic polypropylene (iPP), containing crystallites of N,N′-dicyclohexyl-2,6-naphthalenedicarboxamide (DCNDCA) as a nucleating agent of the the β-phase iPP crystal, is carried out under a magnetic field (6 T) to obtain the alignment of the iPP crystal induced by magnetic alignment of DCNDCA. In a previous paper, DCNDCA was reported to undergo magnetic alignment in a liquid suspension. The obtained iPP sample exhibits alignment of the β-phase crystal with the c-axis aligned perpendicular to the magnetic field. The comparison of this alignment of iPP with the reported magnetic alignment of DCNDCA indicates that the β-phase crystal grows epitaxially on the DCNDCA crystal. The (330)_β plane of the iPP crystal lies on the bc-plane of the DCNDCA crystal in which the direction of the c-axis of the iPP coincides with the direction of the b-axis of the DCNDCA crystal.     

Growth rate and surface microstructure in α(6H)–SiC thin films grown by chemical vapor deposition

Monocrystalline 6H-SiC thin films have been epitaxially grown on off-axis 6H-SiC {0001} substrates in the temperature range of 1623–1873 K via chemical vapor deposition. The growth rate was a strong function of the growth temperature and the reactant gas concentration. The activation energies for growth were 64 kJ/mole and 55 kJ/mole for the (0001) Si face and the (0001) C face, respectively. The concentration of growth pits in the films increased as a function of decreasing deposition temperature, increasing concentration of reactant gases and increasing off-axis orientation. Beta-SiC islands were also observed in the epilayers when the (SiH₄ + C₂H₄)/H₂ ratio was ≥2.5:3000.