Effect of N, C and B interstitial atoms on local bonding structure in mechanically activated TiH2/h-BN, TiH2/C, and TiH2/B mixtures

Mechanically activated TiH₂/h-BN, TiH₂/C and TiH₂/B mixtures was studied by temperature-programmed desorption, X-ray diffraction, transmission electron microscopy and X-ray emission spectroscopy. Ball milling in the presence of additives results in a modification of hydrogen occupation sites. Additional Ti-N, Ti-C or Ti-B bonds from chemical bonding of Ti with interstitial N, C and B atoms, are formed in TiH₂ due to contact of TiH₂ nanoparticles with the respective additive matrix materials. Mixed configurations around Ti atoms with proportional combination of local Ti-H and Ti-N, Ti-C or Ti-B bonds significantly decrease the thermal stability of TiH₂. The effect is most pronounced when boron is the additive.     

Effects of silanization of C/C composites and grafting of h-BN fillers on the microstructure and interfacial properties of CVI-based C/C-BN composites

A low-density carbon/carbon (C/C) composite/silane coupling agent/hexagonal boron nitride (h-BN) hybrid reinforcement was prepared by grafting polyethyleneimine (PEI)-encapsulated modified h-BN fillers onto a carbon fiber surface using 3-aminopropyltriethoxysilane (APS) as the connection to improve the distribution uniformity of h-BN fillers in quasi-three-dimensional reinforcements and the interfacial properties between the fibers/pyrocarbon (PyC) in the C/C-BN composites obtained after densification by chemical vapor infiltration (CVI). The microstructure and chemical components of the hybrid reinforcement were investigated. The transmission electron microscopy (TEM) sample was prepared using a focused-ion beam (FIB) for the h-BN/PyC interfacial zone. The interlaminar shear strength (ILSS) and impact toughness were analyzed to inspect the composites’ interfacial properties. The results show that APS and h-BN are uniformly grafted on the fiber surface in the chopped fiber web inside the C/C composite without a density gradient, and agglomeration occurred and significantly increasing the fiber surface roughness. The highly ordered h-BN basal plane may affect the order degree of PyC near the h-BN/PyC interface. The addition of h-BN reduces the PyC texture near it, causing the annular cracks to disappear gradually. The lower PyC texture and the rougher fiber surface strengthen the interfacial bond of the fiber/matrix. Consequently, the ILSS strength of the C/C-BN composites first increases and then decreases as the h-BN filler content increases and is always higher than that of the C/C composite, while the addition of h-BN fillers weakens its impact toughness. When the h-BN content in the C/C-BN composite is 10 vol%, the ILSS of the C/C-BN composites was 15.6% higher than that of the C/C composites. However, when the h-BN content is excessive (15 vol%), the densely grafted h-BN will bridge each other, reducing the subsequent CVI densification efficiency to form a loose interface, causing a decrease in the shear strength.     

Synthesis of vertically aligned flower-like morphologies of BNNTs with the help of nucleation sites in Co–Ni alloy

A Co–Ni alloy deposited at the top of Si substrate produces nucleation sites when etches with ammonia. The as-produced nucleation sites are used as a pattern to grow flower-like morphologies of vertically aligned Boron nitride nanotubes (BNNTs) in the present study. HR-TEM micrographs show black-blur like morphology on the outer part of the BNNTs. The sample contains BNNTs with and without internal bamboo like structures. XPS survey shows B 1s and N 1s peaks at ~191 eV and ~398 eV that indicate the presence of Boron and Nitrogen components in the synthesized sample. Raman spectrum shows a major peak at 1370 cm⁻¹ that corresponds to E_2g mode of h-BN. The as-synthesized BNNTs can be used for its potential applications without any further purification.     

基于氮化硼薄膜的alpha粒子探测器

本文利用低压化学气相沉积法在蓝宝石衬底上外延生长了高质量的厚度为1μm的h-BN。在h-BN上沉积Au电极制备了MSM(Metal-Semiconductor-Metal)结构的alpha粒子探测器。对制备器件的电学特性进行测试,结果表明无论是正向电压还是反向电压,探测器的漏电流都在纳安数量级,满足核辐射探测器的要求。利用能量为5.48MeV的241Am alpha源测试了探测器的alpha粒子响应,测试结果表明,探测器能够实现对alpha粒子的探测,这些结果清楚的表明,高质量的h-BN有望在核辐射探测领域得到应用。     

六方氮化硼薄膜制备及其压电响应的研究

采用射频（RF）磁控溅射的方法,通过改变工艺参数在n型Si（100）片上制备六方氮化硼（h—BN）薄膜。通过傅立叶红外（FTIR）光谱仪,x射线衍射（xRD）仪进行结构表征,原子力显微镜（AFM）进行表面形貌和压电性能表征。测试结果表明,在射频功率为300W、衬底温度为500℃、工作压强在0．8Pa、N2与Ar流量比为4：20和衬底偏压在-200V时制备的六方BN薄膜具有高纯度、高c-轴择优取向,颗粒均匀致密,粗糙度为2．26nm,具有压电性并且压电响应均匀,符合高频声表面波器件基片高声速、优压电性要求。薄膜压电性测试研究表明,AFM的PFM测试方法适用于纳米结构半导体薄膜的压电性及其压电响应分布特性的表征。     

类石墨烯结构二维氮化硼材料:结构特性、合成方法、性能及应用

石墨烯的发现和成功制备引起了人们对二维材料的研究热潮。六方氮化硼(h-BN)薄膜作为类石墨烯结构的二维层状材料,也是当前的研究热点。介绍了h-BN及其相应的低维纳米结构,并概述了近期对二维BN纳米材料的形貌、合成、性能和应用的研究进展。目前对一维和二维纳米材料的研究表明,BN纳米材料具有诸多优异性能,包括高温稳定性、低介电常数、高力学性能、高热导率、高硬度和高耐腐蚀性,BN纳米材料系统已成为最具前景的非碳纳米系统,在不远的将来将有广泛的应用。     

NiCrAlYSi / h-BN 高温可磨耗封严涂层摩擦磨损性能研究

目的加入h-BN和团聚聚苯酯分别作为固体润滑剂和造孔剂,以提高NiCrAlYSi基封严涂层的高温摩擦磨损性能。方法采用真空熔炼雾化造粒和料浆喷雾造粒技术制备NiCrAlYSi/h-BN聚苯酯复合粉体,再利用大气等离子喷涂技术制备高温可磨耗封严涂层,通过扫描电子显微镜(SEM)、能谱仪(EDS)、CSM摩擦磨损试验机和三维轮廓仪等手段,研究NiCrAlYSi/h-BN封严涂层显微结构、元素组成以及室温和800℃下的摩擦磨损性能,探究涂层在室温和800℃下的磨损机理。结果等离子喷涂NiCrAlYSi/h-BN封严涂层组织比较均匀,涂层结合强度可达15MPa,孔隙率约为32%。室温下封严涂层与DD6镍基单晶高温合金球间的平均摩擦因数为0.897,涂层磨损体积为2.09×10~8μm~3;800℃高温下平均摩擦因数为0.425,涂层磨损体积为3.22×10~8μm~3;封严涂层800℃下有良好的可磨耗性,相应对偶件的磨损较轻;高温下,封严涂层金属基相软化、h-BN的润滑作用和部分金属基相高温下生成自润滑性氧化物,是摩擦因数降低和对偶件磨损较轻的主要原因。NiCrAlYSi/h-BN封严涂层室温的主要磨损机理为涂抹、磨粒磨损和轻微氧化,高温下的主要磨损机理为切削、塑性变形、氧化和粘着磨损。结论等离子喷涂NiCrAlYSi/h-BN高温封严涂层在高温下的可磨耗性能较好。