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51.
The thermal stability of interfaces between metals (Ni, Pt, Ti, Mo) and III-V compound semiconductors has been investigated
by the application of Rutherford backscattering spectrometry. Metal diffusion and interfacial lattice disorder of the semiconductors
were analyzed for various metal/semiconductor samples annealed at temperatures up to 500°C. The interfaces of Ni/GaAs and
Ti/GaAs were found to be more stable than those of Ni/In-based semiconductors and Ti/ In-based semiconductors, respectively.
Faster diffusion of Pt atoms was ob-served in In-and As-containing materials than in P-containing materials. Mo/ semiconductor
interfaces were the most stable. 相似文献
52.
KEITH A. SCHIMMEL ALIEU WURIE SHAMSUDDIN ILIAS JAN E. PEGRAM 《Journal of food science》1996,61(3):577-580
We tested the feasibility of using polymer membranes for a self-hydrating packaging system to reconstitute freeze-dried foods using nonpurified water. Several commercial membranes were screened according to (1) hydration rate, (2) water permeability, (3) passage of microorganisms, (4) salt rejection, and (5) strength. The most promising membranes were used for developing and testing prototype packaging systems. A feasible self-contained rehydration system was a nylon-6 polyamide membrane that rehydrated the freeze-dried food within 30 min while passage of microorganisms was prevented. The temperature was 37°C, and the food contained 0.5g/5g of a low molecular weight solute (salt). Such self-contained membrane rehydration systems must be designed to accommodate expected environmental conditions such as temperature, relative humidity, and nature of the product. 相似文献
53.
将信道传输容量动态分配技术应用于数字用户环路复用设备中,可用效地解决复用设备线路复用率和话音传输质量之间的矛盾,从而使复用设备具有最佳的传输效果。本文介绍了一种性能优良的统计复用信道的数字用户环路复用设备。 相似文献
54.
P. Kurpas A. Oster M. Weyers A. Rumberg K. Knorr W. Richter 《Journal of Electronic Materials》1997,26(10):1159-1163
Reflectance anisotropy spectroscopy (RAS) has been used to study As-by-P exchange during metalorganic vapor phase epitaxy.
The study focuses on the processes occurring during switching from GaAs to GaInP, especially the effect of purging PH3 over a GaAs surface. GaAsP/GaAs superlattices of different periodicity were grown and the P-content was determined by high-resolution
x-ray diffraction and correlated to the RAS spectra. From the temperature dependence of the P-content, an activation energy
of 0.56 eV was estimated for the incorporation mechanism. In addition to the insights into the processes at mixed group-V
heterointerfaces, our study demonstrates the reproducibility of RAS transients that thus can be used for process monitoring. 相似文献
55.
介绍了利用单片机的串、并行接口和专用显示接口 IC 设计显示接口电路的方法,并提供了4种动态和静态显示的硬件接口电路。 相似文献
56.
57.
Marcela Brugnach Andrew Tagg Florian Keil Wim J. de Lange 《Water Resources Management》2007,21(7):1075-1090
The use of computer models offers a general and flexible framework that can help to deal with some of the complexities and
difficulties associated with the development of water management plans as prescribed by the Water Framework Directive. However,
despite the advantages modelling presents, the integration of information derived from models into policy is far away from
being trivial or the norm. Part of the difficulties of this integration is rooted in the lack of confidence policy makers
have on the incorporation of modelling information into policy formulation. In this paper we examine the reasons for this
apparent lack of confidence and explore how some tools, presently in use, address this problem. We conclude that public confidence
in models is highly dependent on the way uncertainties are addressed and suggest possible directions of action to improve
the current situation. Four real case studies illustrate how computer models have been used in The Netherlands for carrying
out management plans at regional and national scale. We suggest that the solution to integrate modelling information into
policy formulation lies on both the modelling and the policy-making communities. 相似文献
58.
59.
K. Chatty T. P. Chow R. J. Gutmann E. Arnold D. Alok 《Journal of Electronic Materials》2002,31(5):356-360
Hall measurements have been used to compare the properties of 4H-SiC inversion-mode MOSFETs with “wet” and “dry” gate oxides.
While the field-effect mobilities were approximately 3–5 cm2/Vs, the Hall mobilities in 4H-SiC MOSFETs in the wet and dry oxide samples were approximately 70–80 cm2/Vs. The dry-oxidized metal oxide semiconductor field effect transistors (MOSFETs) had a higher transconductance, improved
threshold voltage, improved subthreshold slope, and a higher inversion carrier concentration compared to the wet-oxidized
MOSFETs. The difference in characteristics between the wet- and the dry-oxidized MOSFETs is attributed to the larger fixed
oxide charge in the dry oxide sample and a higher interface trap density in the wet oxide sample. 相似文献
60.