室温离子注氢CeO2的微结构及价态研究

利用高分辨透射电子显微镜(HRTEM)及电子能量损失谱(EELS)对室温下注入氢离子的CeO2烧结体的显微组织结构和价态进行了原位观察和分析。结果表明：室温注氢，虽可以使严重损伤区内氧的状态发生明显改变，却不能引起CeO2的相转变及Ce的价态改变；这一结果可能与氢离子因尺寸太小不能占据CeO2的正常格点位置从而无法有效形成氧空位以及室温下CeO2中Ce和O的扩散比较困难等因素有关。     

纳米Fe粉的制备研究

总结了纳米Fe粉的制备方法,重点介绍了一种新的制备方法——封闭循环氢还原法。该方法以FeSO·47H2O和NaOH为原料,采用沉淀方法制备粒径为30～70nm的Fe2O3粉末,其反应条件为:反应温度50℃,反应终点pH值大于12,陈化时间1h。用封闭循环氢还原法,在400℃下还原Fe2O3得到了Fe粉。其粒径在20～50nm之间,含量为99.16%。     

膜分离法回收合成氨弛放气中氢气

介绍了膜分离的原理和应用。实践表明该方法具有效率高、流程简单、操作灵活容易、纯度高和收率高等优点。     

Hydrogen Absorption and Release Behavior in Hydrogen Decrepitation Process of Nd-Fe-B Alloys

The behavior of hydrogen absorption and release in hydrogen decrepitation (HD) process of Nd-Fe-B alloys were investigated. The results reveal that the reactivity and the amount of hydrogen absorption in HD process are related to the surface activity of the alloy so that the fresh and active surface has a higher efficiency. The presence of Nd-rich phase at the grain boundary is an essential factor of the HD activity of the alloy at room temperature. On degassing, hydrogen is released from the HD powder continuously with increasing temperature. And the residual hydrogen is as low as 0.0015% at 1073K, which shows that the hydrogen is almost exhaused. It is feasible to remove the hydrogen from the HD powder by heating treatment at the temperature of 523-723K for 1h prior to the magnetic field forming in order to decrease the harmful effect of hydrogen on the easy axis alignment of HD magnet.     

镁基储氢材料的研究进展

本文回顾和总结了近几十年来，特别是近十年来镁基储氢材料的发展情况，重点综述了机械合金化Mg-Ni2合金体系的研究情况及其近期的进展，从储氢材料成份及配比，制造工艺改进以及材料的组织结构对材料性能的影响等各方面进行一定的分析和归纳，对储氢材料研究中出现的问题以及今后的发展方向都作了探讨。     

SiCp/2024复合材料的氢脆敏感性研究

在浸泡、阴极极化、阴极极化同时迭加拉伸变形、添加As₂O₃毒化剂等常见致氢条件下,通过慢应变速率拉伸试验研究了SiC_p/2024复合材料的力学性能,考察了断口形貌.测定了该材料在按几种常用充氢条件充氢后的氢含量.发现虽然强烈阴极极化使材料力学性能下降,但其原因在于阴极极化引起的碱性腐蚀,与氢脆无关.获得了不同于前人研究的新结论:在本文试验条件下SiC_p/2024材料不发生氢脆,也不发生不可逆氢损伤,其原因与该材料难以充入氢有关.     

ERD facility for analysis of hydrogen and deuterium in solids

Hydrogen is the lightest element in nature, and so, its detection and quantitative analysis is difficult by the conventional methods utilized for other elements. In the recent years the technique of elastic recoil detection analysis (ERD) using 1–2 MeV He⁺ beam has been developed to quantitatively and simultaneously analyze hydrogen and its isotopes in solids. Such a facility has been set up using the 2 MeV Van-de-Graaff accelerator at IIT Kanpur. It facilitates H and D analysis in a material up to a depth of ∼ 1μm with a detection sensitivity of 0·1 at.% and depth resolution of about 300 ?. The application potential of this setup is illustrated by presenting the results of measurements performed on Al:H:D systems prepared by plasma source ion implantation and highT _c YBCO pellets exposed to humid atmosphere.     

Plasma immersion ion implantation for SOI synthesis: SIMOX and ion-cut

We have demonstrated feasibility to form silicon-on-insulator (SOI) substrates using plasma immersion ion implantation (PIII) for both separation by implantation of oxygen and ion-cut. This high throughput technique can substantially lower the high cost of SOI substrates due to the simpler implanter design as well as ease of maintenance. For separation by plasma implantation of oxygen wafers, secondary ion mass spectrometry analysis and cross-sectional transmission electron micrographs show continuous buried oxide formation under a single-crystal silicon overlayer with sharp Si/SiO₂ interfaces after oxygen plasma implantation and high-temperature (1300°C) annealing. Ion-cut SOI wafer fabrication technique is implemented for the first time using PIII. The hydrogen plasma can be optimized so that only one ion species is dominant in concentration and there are minimal effects by other residual ions on the ion-cut process. The physical mechanism of hydrogen induced silicon surface layer cleavage has been investigated. An ideal gas law model of the microcavity internal pressure combined with a two-dimensional finite element fracture mechanics model is used to approximate the fracture driving force which is sufficient to overcome the silicon fracture resistance.     

Selective partial oxidation of light paraffins with hydrogen peroxide on thin-layer supported Nafion-H catalysts

Thin-layer carbon supported Nafion-H catalysts were found to be active and highly selective (S>98%) for the partial oxidation of C₁-C₃ alkanes, in a three phase catalytic membrane reactor (3PCMR), under mild conditions and in the presence of H₂O₂. The influences of the catalyst teflon loading and H₂O₂ concentration on the reaction rate have been evaluated. A reaction pathway, based on the electrophilic hydroxylation of the C-H bond of alkanes with protonated hydrogen peroxide (H₃O ₂ ⁺ ), is discussed.     

Hydrogen incorporation in Ni–P films prepared by electroless deposition

Electroless NiP films, with 12 to 16 wt % P, were deposited from a moderately acid solution. Thermogravimetric analysis indicates the presence of occluded hydrogen in the layers, which desorbs upon heating. The amount of incorporated hydrogen decreases when the pH of the solution or the nickel sulfate concentration is increased; by contrast it increases with hypophosphite concentration. Cyclic voltammetry, using an electrochemical quartz crystal microbalance, confirms the existence of parasitic reactions, namely the reduction of protons of the solvent during the cathodic process and oxidation of hydrogen during the dissolution of the layers. This behaviour is in qualitative agreement with the proposed reaction scheme.