卤水结晶除杂工艺技术研究

介绍利用结晶器进行卤水除杂的一种工艺。旧工艺碳酸钠和氢氧化钠直接加入卤水除杂,容易产生碳酸钙和氢氧化镁胶体沉淀,难以过滤。采用结晶除杂工艺,减小钙镁的反应浓度,同时减小除杂剂离子的浓度,使生成杂质晶体的过饱和度得到控制。该工艺很好地控制杂质沉淀结晶的粒径,较好地解决盐泥的固液分离。实验验证了影响杂质结晶生长的因素。实验结果对比了卤水结晶除杂与传统除杂的盐泥分离效果,得到的结晶除杂盐泥抽滤速度比传统盐泥抽滤快30倍。     

Influence of the Surface and Structural Characteristics of Activated Carbons on Adsorptive Removal of Halo-Olefinic Impurities from 1,1,1,3,3-Pentafluoropropane

abstract Halo-olefinic impurities in 1,1,1,3,3-pentafluoropropane (HFC-245fa) product used as blowing agents, etc. could damage the human body and must be removed. Activated carbon was treated by HCl, ...     

原料中杂质对异丁烷脱氢Pt-Sn-K/Al2O3催化剂性能的影响

采用固定床法考察了原料异丁烷中乙硫醇、甲醇、正丁烷和1-丁烯等杂质对Pt-Sn-K/Al₂O₃催化剂上异丁烷脱氢制异丁烯反应性能影响,反应产物使用气相色谱进行分析.实验结果表明,在异丁烷脱氢制异丁烯正常反应条件下,即温度580℃、压力0.1MPa、进料组成H₂/i-C₄H₁₀(体积比)= 2、总空速GHSV = 2000h^-1、GHSV(i-C4H10)= 667h^-1,乙硫醇、甲醇、正丁烷和1-丁烯对Pt-Sn-K/Al₂O₃催化剂的异丁烷转化率和异丁烯选择性均有较大的影响,且杂质含量越高,对催化剂的转化率和选择性影响越大.并对杂质造成催化剂失活的原因进行了分析.     

含间隙元素Ti-Al合金的熔点及同素异型转变温度计算

应用固体与分子经验电子理论的平均晶胞和平均原子模型分析计算了间隙元素对ＴｉＡｌ合金价电子结构的影响,同时根据该理论的键能公式计算了间隙元素影响下的熔点及同素异型转变温度变化。间隙元素提高了合金元素的原子杂价,引起键结构各向异性严重,导致熔点降低。     

基于智能视觉的透明液体可见异物检测软件设计

目前在国内的透明液体生产线上,液体通常采用人工检测,效率低、准确率,所以基于图形处理算法以及QT,设计了一套基于智能视觉的透明液体杂质颗粒检测软件,重点实现了软件与算法的改进优化;获取的连续图像经自适应中值滤波预处理去除图像噪声后,通过改进的序列图像二次差分算法提取出序列图中的细小的异物,然后根据通过SIFT特征度量的MeanShift目标跟踪算法,跟踪液体图像中的细小异物;并根据异物的运动轨迹及大小,检测到有无异物以及异物的类型,进而进一步判断透明药品质量是否合格;结果测试表明,软件的准确率达到95%以上,检测分辨率达到了44μm,基本可以替代透明液体生产线上的人工检测。     

基于卡尔曼滤波改进的精子图像序列分割方法

图像分割是精子图像识别的一项关键技术,在精子运动能力分析中起着至关重要的作用。本文对采集的连续精子图像序列进行灰度化、去噪等预处理后,采用Otsu算法对首幅动物精子图像二值化,对后续图像采用Kalman Filter确定二值化阈值范围,改进Otsu算法求出每一幅图像的适当阈值并进行二值化,缩短算法时间并能保证分割精度。应用形态学消除精子尾部和部分精子之间的粘连现象,通过计算和比较目标面积、形状因子,去除小颗粒杂质以及形状及灰度和精子相似的杂质,为精子运动能力检测提供高质量的分割图像。     

微量元素对镀锌层微观结构的影响

研究了硫酸盐镀锌液中常见金属微量元素离子Pb^2 ,Cu^2 ,In^ ,Fe^2 对沉积层的外观形貌，显微组织，结晶择优取向和耐蚀性的影响，研究表明，不同的要质对镀层的外观，显微组织以及晶面的择优取向的影响不同，铅离了孤引入降低了镀层的外观质量和（002）晶面的强度，镀离子的引入使镀层的外观质量和（002）昌面的强度均得到提高，起到了无机光亮剂的作用。     

Search for Anisotropic Effects of HCP Solid Helium on Optical Lines of Cesium Impurities

The anisotropic effect of a hcp ⁴He solid matrix on cesium atoms has been proposed as a tool to reveal the parity violating anapole moment of its nucleus. It should also result in splitting the D₂ optical excitation line in a way depending on the light polarization. An experimental investigation has been set up using oriented hcp helium crystals in which cesium metal grains are embedded. Atoms are created by laser sputtering from this grains. Optical absorption spectra of the D₂ line have been recorded in the temperature range of 1.0 to 1.4 K at liquid/solid coexistence pressure by monitoring the fluorescence on the D₂ line at 950 nm. No significant effect of the light polarization has been found, suggesting a statistically isotropic disordered solid environment for the cesium atoms.      

Effects of impurities on removal of polysilicon in chemical-mechanical polish

The effects of impurities on the removal of doped polysilicon in the chemical-mechanical polishing (CMP) process is discussed. It has been found that the Si-CMP is seriously retarded in the presence of boron impurities. In this paper, effects of several usually used n-and p-type impurities for polysilicon are investigated. Successive polishing was performed to reveal the correlation between the removal rate and the dopant concentration along the depth of polysilicon layer. The removal is seriously retarded for p-type samples and slightly enhanced for n-type samples. After excluding the interference from surface roughness, linear relationship was found between the resultant removal rate and the doping concentration. In this study, electrostatic interaction between the reactant ions and the ionized impurities at the silicon surface is proposed to be the primary factor to change the removal reaction rates. For p-type polysilicon etched in an alkaline aqueous solution, transport of OH⁻ anions is hindered because OH⁻ anions experience a repelling force in front of the negative-charged acceptors. Following the same principle, the removal reaction forn-type polysilicon is enhanced. However, the removal rate forn-type polysilicon is rather limited by surface reaction than by transport of reactant ions. As a consequence, the enhancement of removing n-type polysilicon is not so prominent as compated to the retardation effect found for removal of p-type polysilicon.     

工业用丙烯中烃类杂质的气相色谱分析

用优化后的色谱分析条件 ,分析工业用高纯丙烯中烃类杂质。采用与标准样品对照法进行定性 ;用峰面积外标法进行定量。此法可一次进样较好地分离检测含多组份的烃类物质。方法操作简单 ,省时 ,精确度高 ,重复性好。