双目视觉中的角点检测算法研究

为了实现双目视觉中的特征提取与立体匹配,在研究现有角点检测算法的基础上,提出一种改进的Harris角点检测算法。该算法首先采用图像分块和邻近角点剔除的策略,实现了阈值的自适应调节,并保证角点分布的均匀和避免角点聚簇的产生。结合Forstner检测算法,将精度提高到亚像素级。编程计算结果验证了该方法的准确性和稳定性。     

论LED信息显示设备的等效发光面积

人们对信息的获得百分之九十以上来自于眼睛,LED具有颜色丰富、亮度可大范围调节、功耗低、可靠性高、寿命长等特点,以LED为发光光源的信息显示设备在监控系统、信息发布系统中得到越来越广泛的应用。设计LED信息显示,需考虑的问题之一是点距,文章从讨论人眼的视觉特性着手,研究了LED信息显示设备的等效发光面积及点距的设计。     

Performance and Modeling of the MWIR HgCdTe Electron Avalanche Photodiode

The operation of the mid-wave infrared (MWIR) HgCdTe cylindrical electron injection avalanche photodiode (e-APD) is described. The measured gain and excess noise factor are related to the collection region fill factor. A two-dimensional diffusion model calculates the time-dependent response and steady-state pixel point spread function for cylindrical diodes, and predicts bandwidths near 1 GHz for small geometries. A 2 μm diameter spot scan system was developed for point spread function and crosstalk measurements at 80 K. An electron diffusion length of 13.4 μm was extracted from spot scan data. Bandwidth data are shown that indicate bandwidths in excess of 300 MHz for small unit cells geometries. Dark current data, at high gain levels, indicate an effective gain normalized dark density count as low as 1000 counts/μs/cm² at an APD gain of 444. A junction doping profile was determined from capacitance–voltage data. Spectral response data shows a gain-independent characteristic.     

A 640 by 480 Pixels Readout Circuit for IR Imaging

A readout circuit for a 640 × 480 pixels FPA (focal plane array) has been successfully designed, fabricated and tested. The circuit solution is based on a per pixel source-follower direct injection (SFDI) pre-amplifier. Signal multiplexing is performed in both X and Y direction. The pixel size is 25 m × 25m. The chip is optimized for a QWIP (quantum well infrared photodetector) operating at a temperature of 70 K. The circuit has been realized in a standard 0.8 m CMOS process.     

Feedback supported isolation structure for blocking of minority leakage carriers in power integrated circuits

A combination of two conventional junction isolation structures is used to produce a device, which significantly improves the blocking of minority carriers injected into the substrate of a power IC due to switching of an inductive load. Simulation results show that the connection scheme employed greatly enhances the efficiency of the structures. A substrate current reduction of up to four orders of magnitude compared to conventional junction isolation structures is achieved. The significance of doping profiles in the p-sinker region is evaluated.     

PMOLED发光特性的研究

为了研究PMOLED器件的物理特性。在Alq3主体材料中掺杂C545制备了PMOLED发光器件．其单象素结构为TO（120nm）／CuPc（12nm）／NPB（50nm）／Alq3：C545（30nm）／LiF（1nm）／Al（200nm），色坐标为（0．276，0．589）。该器件的载流予注入模型，在起亮前符合热发射注入模型；起亮后满足遂穿注入模型。PMOLED能较好地满足朗伯定律，并具有响应速度快，视角宽，色彩保真度高等特性。     

双向电缆网络的设计要点和方法步骤

通过对CATV双向电缆网络反向回传通道中汇集噪声和汇集均衡的产生、影响和解决办法的探讨,说明双向电缆传输网络的设计要点和方法步骤.     

On SCP Overload Control in Mobile Intelligent Network Based on Queue Size

1IntroductionIntelligent network,an affiliated network over com-munication network,is introduced for the quick provi-sion of newservices[1 ~2].In the structure of intelligentnetwork,a Service Control Point(SCP) serves a lot ofService Switch Point(SSPs)[3 ~4].It is a veryi mportanttopic that howto guarantee the Qos of SCP (e .g.thenumber of successfully processed calls per unit ti me)whenthe network becomes overloadedinthis centralizednetwork structure . There were many studies about the…     

信令网MAP业务过程双路由问题分析报告

移动网络随着竞争的需要和移动互联网的发展,原有CS业务网络也逐步向IP化方向发展。目前,信令网络中存在由LSTP／HSTP点组成的E1信令链路网和NGN软交换组成的IP路由、本文对移动网中存在的双路由业务情况进行了深入的分析说明,对于信令网维护人员有一定参考价值,对提高信令监测系统数据的完整性有促进作用。     

New implementation of high linear LNA using derivative superposition method

New implementation of a high linear low-noise amplifier (LNA) using the improved derivative superposition (DS) method is proposed. The input stage is formed by two transistors connected in parallel. One transistor is biased in the strong inversion region as usual and another one is biased in the moderate inversion region instead of the weak inversion region, thus allowing a feasible source degeneration inductance at the sources of the two transistors to achieve a good input impedance matching and low noise figure (NF) while keeping high third-order input intercept point (IIP3) improvement with the DS method. The new implementation has been used in a 0.18-μm CMOS high linear LNA. The measured results show that the LNA achieves +11.92 dBm IIP3 with 9.36 dB gain, 2.25 dB NF and 7.5 mA at 1.8 V power consumption.