COM组件接口方法参数的数据类型的选择

论述了在用 Visual C+ +建造 COM组件时 ,如何选择接口方法参数的数据类型的问题。结合客户程序是 ASP应用程序的情景 ,讨论利用 Visual C+ +和 ATL ,如何在组件程序的一端选择相应的数据类型。     

主动约束层阻尼板结构动力学建模研究

将有限元法和GHM法相结合，给出了建立主动约束层阻尼（ACLD）板结构动力学模型的新方法。建模时，考虑到粘弹材料（VEM）的纵向位移影响，采用GHM方法描述VEM的本构关系，解决了VEM的力学特性随温度和频率变化的难点，避免因VEM的复杂本构关系而产生的微分积分方程。算例表明本文给出的建模方法是准确的，ACLD结构能够有效控制结构振动。     

挡土墙填土曲线破裂面的地震主动土压力分析

在地震作用影响下，墙后填土处于极限平衡状态时，假定破裂面为一条通过墙趾的旋轮线。从墙后土楔中取出一微薄水平层，研究其在水平惯性力下的平衡，得到的地震土压力分布和土压力合力作用点位置均与实验结果相吻合。     

InGaAsP/InP有源双稳放大器的实验研究

本文报导了室温下F—P型InGaAsP/InP双异质结半导体激光放大器的双稳态效应,放大器的增益为20dB。     

化学镀SiCp／Ni－P复合镀层与基体结合强度及其影响因素

论述了ＳｉＣｐ／Ｎｉ－Ｐ复合镀层与钢基体的结合强度及其影响因素。复合镀层中离界面５μｍ厚度以内区域的组成及应力状态对镀层／基体的界面结合有决定性作用，在该区域以外ＳｉＣ粒径变化不影响镀层的结合强度。适当的热处理可提高界面结合力。     

CAD OF MILLIMETER WAVE OSCILLATORS WITH THE FDHB TECHNIQUE

In this paper the modelling, analysis and optimization of millimeter wave oscillatorsare investigated by using the a frequency-domain harmonic balance technique (FDHB), where theexternal-circuit impedances looking outside from the active device are calculated with a combinedtechnique of modes expansion, Galerkin, and collocation methods. The optimization results arein agreement with the experimental ones, which show the reliability of the presented model andoptimization.     

Structure-activity studies of human tumour necrosis factors

The mechanism by which tumour necrosis factors (TNF and lymphotoxin,also called TNFß and TNFß respectively) exerttheir cytotoxic activity on many malignant cells, remains largelyunknown. Furthermore, the broad array of differentiation (geneinduction) and mitogenic activities towards many primary cellsis still a subject of intensive investigation. TNF is an importantmediator in inflammation, immune responses and infection-relatedphenomena and these activities contribute to the severe toxidtyseen when TNF is used as an anticancer agent. The first stepin the mechanism of action is the specific binding of the ligandto its receptors and dissection of the molecular mechanism involvedin this interaction is the subject of this review. The reasonsfor the interest in this aspect are obvious: first, the developmentof strong antagonistic TNF analogues can be useful in dampeningthe potentially lethal or debilitating effects of an overproductionof the cytokine (as in septic shock or rheumatoid arthritis).Secondly, since two distinct TNF receptors exist, constructionof TNF muteins that distinguish between both types may leadto derivatives of this plekrtropic agent with a more restrictedbiological activity pattern. Ideally, one would like to developa TNF mutant that has retained its cytotoxic action on tumourcells without inducing the deleterious systemic toxteity. Suchan optimized TNF molecule could become a potent anticancer agent     

片式多层电容电阻复合元件的研制

采用低温共烧陶瓷(LTCC)技术将电容、电阻元件集成在多层陶瓷基板里,构成了一种新型的片式多层复合元件,并研究了其制造工艺性能和频率特性。结果表明,片式多层电容电阻复合元件制造工艺适合批量化生产,并为片式多层LC滤波器、LTCC基板及器件的研发提供了极好的参考价值。     

Studies on nucleation kinetics of InxGa1−xN/GaN heterostructures

Nucleation kinetics during the growth of In_xGa_1−xN on a GaN substrate have been studied. The behavior of nonequilibrium between the In_xGa_1−xN and the GaN substrate has been analyzed, and hence, the expression derived for the stress-induced supercooling/superheating has been numerically evaluated. The maximum amount of stress-induced supercooling is found to be 1.017 K at x=0.12. These values are incorporated in the classical heterogeneous nucleation theory. Using the regular solution model, the interfacial tension between the nucleus and substrate and, hence, the interfacial tension between nucleus and mother phase and thermodynamical potential of the compounds have been calculated. The amount of driving force available for the nucleation has been determined for different compositions and degrees of supercooling. It has been shown that the value of the interaction parameter of InN-GaN plays a dominant role in nucleation and growth kinetics of In_xGa_1−xN on a GaN substrate. These values have been used to evaluate the nucleation parameters. It is shown that the nucleation barrier for the formation of a In_xGa_1−xN nucleus on a GaN substrate is minimum in the range of x=0.12 to x=0.17, and it has been qualitatively proved that good quality In_xGa_1−xN on GaN can be grown only in the range 0<x≤0.2.     

基于目录服务的跨平台账户管理

讨论了多重帐户问题在计算机网络管理中诸多弊端。提出以目录服务（Novell NDS）为基础，实现跨平台（NetWare、WindowsNT和Solaris）的帐刻统一管理的方案及详细实施实例。