Magnetic effects of direct ion implantation of Mn and Fe into p-GaN

In p-GaN implanted with Mn (3×10¹⁶ cm⁻² at 250 keV), the material after annealing shows ferromagnetic properties below 250 K. Cross-sectional transmission electron microscopy (TEM) revealed the presence of platelet structures with hexagonal symmetry. These regions are most likely Ga_xMn_1−xN, which produce the ferromagnetic contribution to the magnetization. In p-GaN implanted with Fe, the material after annealing showed ferromagnetic properties at temperatures that were dependent on the Fe dose, but were below 200 K in all cases. In these samples, TEM and diffraction analysis did not reveal any secondary phase formation. The results for the Fe implantation are similar to those reported for Fe doping during epitaxial growth of GaN.     

真空微电子荧光平板显示器件的实验研究

真空微电子荧光平板显示器件的实验研究刘杰明，李志能，陈秀峰（浙江大学信息与电子工程学系）关键词：真空微电子，反应离子刻蚀一、引言近十年来，随着真空微电子学的崛起，利用微细加工技术，使真空元器件集成化和高性能化已成为可能，一种新型场致发射阵列真空荧光平...     

双波长稳频CO_2激光模糊控制系统的建模与优化

报导一种模糊逻辑控制系统的建模与优化方法。以此方法设计的模糊逻辑控制器，用于双波长稳频ＣＯ２激光器的控制得到令人满意的结果。     

离子注入中污染的产生及防护

本文概述了离子注入过程中污染产生的原因和防止污染的措施，特别强调了对微粒污染和金属污染的防护以满足ＵＬＳＩ加工对离子注入的要求。     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.     

新型低压抽屉式开关柜在冶金系统的应用

介绍新型低压抽屉式开关柜的结构性能和特点，并与早期低压柜作了比较。阐述了新型低压抽屉式开关柜在冶金系统应用中的几点改进情况。     

氧化锌压敏电阻的老化机理

研究了ZnO压敏电阻的老化现象,提出了一种新的老化机理-线性链理论。该理论认为,在外电场作用下,压敏电阻势垒高度降低;当降低到一定值时,晶界可变电阻转化为线性晶界电阻,从而压敏链转化为线性链。线性链是稳定的,因而压敏电阻老化到一定程度后其电性能将不能完全恢复。     

荷能束辐照致使Cu/Ag表面偏析的研究

本文研究了金属(Cu)/金属(Ag衬底)系统的荷能束辐照引起的表面偏析现象。观察到Cu在多晶Ag衬底上溅射淀积过程中,Ag原子在Cu膜表面的偏析,且淀积Cu原子能量越大,Ag原子偏析程度越大,即观察到了淀积Cu原子10~(-1)～1eV量级的平均能量差异对膜层表面偏析行为的影响。对溅射淀积所得膜层进行keV量级的离子束辐照,Ag原子的表面偏析程度更甚。     

双塔脱丙烷工艺技术

对扬子乙烯装置双塔脱丙烷系统低压塔液泛、高压塔再沸器堵塞等问题进行了技术分析,提出了工艺流程修改方案,完善了双塔脱丙烷技术,对同类装置有参考价值。     

再生用碱的质量对阴离子交换树脂性能的影响

我国许多电厂在再生阴离子交换树脂时都习惯采用隔膜法生产的工业氢氧化钠，这种氢氧化钠中的杂质离子含量较高，会对阴离子交换树脂的性能产生很大的影响。就碱中杂质成分对阴离子交换树脂的影响，通过比较两种不同纯度的碱再生后的阴离子交换树脂的技术经济性，提出再生阴离子交换树脂时应优先选择纯度较高的碱。