勘测关键技术及其综合应用研究

勘测关键技术及其综合应用研究，系国家“八五”科技攻关２０８－０２－０５专题。该专题研究结合锦屏一、二级等工程，专业面广，应用性强，研究工作难度大，是当前水电工程地质勘探技术中的薄弱环节，是关系到前期工作进展和工程经济效益的重大课题。其研究内容包括：岩心定向技术、砂卵石层取心技术，地应力测试与分析新技术，岩体裂隙结构面的计算机处理系统、岩溶探测新技术、高分辨率工程地震勘探技术、３０００系列测井仪的改     

多约束的桥梁结构拓扑优化

基于ESO (Evolutionary Structural Optimization)的拓扑优化方法,本文提出了一种适应于桥梁结构的拓扑优化方法。引进了两种性能指标公式来确定最佳拓扑设计。另外,为了更有效地尝试改进最终设计的细节,而又不进行更精细有限元网格的完整分析,这里提出了一种精细网络设计方案。再者,结合细啃技术,完成了考虑应力、位移、频率约束的斜拉桥优化设计。通过几种桥梁的设计优化,表明该方法的可应用性、简洁性和有效性。     

PVC／NBR（HNBR）／HDPE共混体系相容性研究（Ⅲ）共混体系动态力学行为和结晶行为研究

用ＤＭＡ和ＤＳＣ研究了ＮＢＲ和氢化ＮＢＲ对ＰＶＣ／ＨＤＰＥ共混体系的增容作用。由于增容剂在相界面与ＰＶＣ和ＨＤＰＥ所产生的作用改变了界面分子的作用形式，使体系中ＰＶＣ和ＨＤＰＥ相的内耗峰内移。而ＤＳＣ的结果表明，增容剂降低了体系中结晶相ＨＤＰＥ的熔点，说明增容剂增加了ＰＶＣ／ＨＤＰＥ的相容性。     

Measurements of Stress Intensity Factors of an Interface Crack Under Mixed Mode Loading

The optical method of caustics has been utilised to measure both the stress intensity factor for a crack lying along the interface of an aluminium/epoxy bimaterial specimen, and the mode mixity arising from the difference in the elastic properties across the interface. Measurements were carried out by using a novel modification to the method whereby caustics are produced and measured from both sides of the specimen, so compensating automatically for the distortion induced in the specimen due to misaligned loading fixtures. A flat reflective surface across the interface was obtained by adhering a reflective coating to the specimen. Verification that this coating does not affect measurement accuracy was obtained by comparing stress intensity factors measured from coated and uncoated monolithic aluminium specimens where good agreement was found to exist between both measurements.     

含铝炸药爆压及能量释放过程的研究

利用有机玻璃法计算了不同配方的含铝炸药的爆压，并根据有机玻璃中冲击波的传播轨迹分析比较了不同含铝炸药的能量释放过程。结果表明，RDX/APP比例一定时，铝含量增加，含铝炸药的爆压减小，后期释放的能量增加。铝含量一定时，随RDX/AP比值的增大，含铝炸药的爆压增加，后期释放的能量基本一致。     

聚氨酯/聚(甲基丙烯酸甲酯-甲基丙烯酸丁酯)互穿聚合物网络聚合物的阻尼性能

采用本体聚合法合成出一系列阻尼性能良好的聚氨酯/聚(甲基丙烯酸甲酯-甲基丙烯酸丁酯)(PU/P(MMA-BMA))互穿聚合物网络(IPN)聚合物,通过动态力学分析方法表征了PU/P(MMA-BMA)IPN聚合物的阻尼性能。探讨了加入催化剂、高温后处理、交联剂用量及PU与P(MMA-BMA)的质量比对PU/P(MMA-BMA)IPN聚合物阻尼性能的影响。实验结果表明,经高温后处理后,以二月桂酸二丁基锡为催化剂、交联剂二乙烯基苯用量(占MMA和BMA的摩尔分数)为1.5%、PU与P(MMA-BMA)的质量比接近1或小于1时,PU/P(MMA-BMA)IPN聚合物具有良好的阻尼性能。     

梯恩梯-吉纳、地恩梯-太安装药体系自旋爆轰特性的研究

本文研究了梯恩梯-吉纳(TNT-DINA)和地恩梯-太安(DNT-PETN)体系的自旋爆轰现象,爆轰波是以低频脉冲方式传播.这些体系具有的爆速、爆热分别为DJ=7.3～7.4km/s和Qv=(5.40±0.01)MJ/kg.不同组成的爆速和爆压PJ通过SW程序计算.用扩散区的爆压P3和爆温T3来评估爆轰波的衰减和重新点火.敏化剂含量相同,梯恩梯-黑索金(TNT-RDX)体系的爆压PJ大于TNT-DINA的爆压,TNT-RDX体系的温度T3比TNT-DINA高60～100K.计算值与实验结果吻合较好.     

关于飞行力学的再思考

对多年来国内外有关飞行力学的发展过程、研究范畴、分类，以及问题表述方式等重新进行了一些考察和思考．从学术和实践的观点，对飞行力学的体系结构和问题表述方式等进行了讨论，并提出了个人的一些看法和建议．     

Finite elements in the analysis of pressure vessels and piping-a bibliography (1976–1996)

The paper gives a bibliographical review of the finite element methods (FEMs) applied for the analysis of pressure vessel structures/components and piping from the theoretical as well as practical points of view. The range of applications of FEMs in this area is wide and cannot be presented in a single paper; therefore the aim of this review is to give the reader an encyclopaedic view of the differnt possibilities that exist today for the finite element analysis in the fields of pressure vessels and piping. The bibliography at the end of the paper contains approximately 1900 references to papers, conference proceedings and theses/dissertations on the subject that were published in 1976–1996. These are classified in the following categories: linear and non-linear, static and dynamic, stress and deflection analysis; stability problems; thermal problems; fracture mechanics problems; contact problems; fluid-structure interaction problems; manufacturing of pipes and tubes; welded pipes and pressure vessel components; development of special finite elements for pressure vessels and pipes; finite element software; and other topics. Also finite element software, general purpose and special purpose codes, used for the analysis of pressure vessels and pipes are briefly discussed and presented.     

Plasma immersion ion implantation for SOI synthesis: SIMOX and ion-cut

We have demonstrated feasibility to form silicon-on-insulator (SOI) substrates using plasma immersion ion implantation (PIII) for both separation by implantation of oxygen and ion-cut. This high throughput technique can substantially lower the high cost of SOI substrates due to the simpler implanter design as well as ease of maintenance. For separation by plasma implantation of oxygen wafers, secondary ion mass spectrometry analysis and cross-sectional transmission electron micrographs show continuous buried oxide formation under a single-crystal silicon overlayer with sharp Si/SiO₂ interfaces after oxygen plasma implantation and high-temperature (1300°C) annealing. Ion-cut SOI wafer fabrication technique is implemented for the first time using PIII. The hydrogen plasma can be optimized so that only one ion species is dominant in concentration and there are minimal effects by other residual ions on the ion-cut process. The physical mechanism of hydrogen induced silicon surface layer cleavage has been investigated. An ideal gas law model of the microcavity internal pressure combined with a two-dimensional finite element fracture mechanics model is used to approximate the fracture driving force which is sufficient to overcome the silicon fracture resistance.