奥克托今/3-硝基-1，2，4-三唑-5-酮共晶炸药晶体缺陷的分子动力学研究

为研究晶体缺陷对奥克托今（HMX）/3-硝基-1,2,4-三唑-5-酮（NTO）共晶炸药稳定性、感度、爆轰性能与力学性能的影响,分别建立了“完美”型与含有掺杂、空位与位错缺陷的共晶炸药模型。采用分子动力学方法,预测了“完美”型与缺陷模型的性能,得到了不同模型的结合能、引发键键长分布、键连双原子作用能、内聚能密度、爆轰参数与力学性能参数,并进行了比较。结果表明：由于晶体缺陷的影响,造成炸药结合能减小,稳定性变差;缺陷晶体的引发键最大键长增大,键连双原子作用能与内聚能密度减小,炸药感度升高,安全性减弱;缺陷晶体的密度、爆速与爆压减小,能量密度与威力降低;与“完美”型晶体相比,缺陷晶体的拉伸模量、体积模量与剪切模量减小,柯西压力增大,炸药刚性与硬度减弱,柔性与延展性增强。     

Improved morphology and crystalline quality of MBE CdZnTe/Si

We report on continuing efforts to develop a reproducible process for molecular beam epitaxy of CdZnTe on three-inch, (211) Si wafers. Through a systematic study of growth parameters, we have significantly improved the crystalline quality and have reduced the density of typical surface defects. Lower substrate growth temperatures (∼250–280°C) and higher CdZnTe growth rates improved the surface morphology of the epilayers by reducing the density of triangular surface defects. Cyclic thermal annealing was found to reduce the dislocation density. Epilayers were characterized using Nomarski microscopy, scanning electron microscopy, x-ray diffraction, defect-decoration etching, and by their use as substrates for HgCdTe epitaxy.     

Distributed topology management for wireless multimedia sensor networks: exploiting connectivity and cooperation

In this paper, we propose a distributed topology management algorithm, named T‐Must, which orchestrates coalition formation game between camera and scalar sensor (SS) nodes, for use in wireless multimedia sensor networks. In the proposed solution, connectivity among the peer camera sensor (CS) nodes is maintained, and coverage is ensured between them. Only the scalar data are not sufficient to describe an event in a particular monitored area. In many cases, multimedia data (specifically, video data) are required to provide more precise information about the event. As the CS nodes, which sense and transmit multimedia data, are costlier than the SS nodes, the former are deployed in the monitored area in lesser numbers compared to the latter ones. In case of CS nodes, power consumption due to sensing is also significant, similar to power consumption for the transmission and reception of packets. Therefore, in this work, in order to increase the network lifetime, topology is controlled by forming coalition between the CS and SS nodes. Upon occurrence of an event, the SS nodes send scalar data to their associated CS nodes. If the scalar data received from SS nodes cross a preconfigured threshold, the associated CS node in the coalition starts sensing the event, captures the video data, and forwards the video data toward other coalitions or sink. Copyright © 2014 John Wiley & Sons, Ltd.     

Very Large Photoconduction Enhancement Upon Self‐Assembly of a New Triindole Derivative in Solution‐Processed Films

A new carbazole‐related small molecule exhibiting self‐assembly into ordered nanostructures in solution‐processed cast films has been synthesized and its charge‐photogeneration and ‐transport properties have been investigated. Large photoconductivity was measured in the amorphous state while an enormous improvement in the photoconduction properties was observed when the molecules spontaneously organized. Photocurrents increased upon self‐assembly by up to four orders of magnitude, mostly due to the drastic enhancement of the charge photogeneration. A greatly favorable arrangement of the aromatic cores in the resulting nanostructures, which were characterized by X‐ray analysis, may explain these improvements. Photocurrents of mA cm^?2, on/off ratios of 10⁴ and quantum efficiencies of unity at low field and light intensity, which are among the best values reported to date, along with the simplicity of fabrication, give this readily‐available organic system great potential for use in plastic optoelectronic devices.     

技术标准的前瞻性与实践的互动性讨论

从我国技术标准国际化、产业调整升级和创新发展的推手角度,浅谈技术标准的前瞻性以及实践过程中的互动性,同时说明建立我国洁净室及相关受控环境标准体系的紧迫性。     

石墨烯纳米间隙电极对的制备研究进展

石墨烯的高晶体质量、高电导率、单层结构以及与有机半导体的良好兼容性使其成为纳米器件和分子器件的理想电极材料,纳米间隙电极对是构筑纳米器件的基础,发展了两种制备石墨烯纳米间隙电极对的方法——纳米线和金丝交替掩膜法以及原子力针尖裁剪法,其过程简单,制备的石墨烯间隙为100～200 nm.石墨烯纳米间隙电极对是制备纳米器件、...     

Non-Selective SiGe Graphic Epitaxial by MBE

To handle the thermal budget in SiGe BiCMOS process, a nonselective graphic epitaxial technology using molecular beam epitaxial (MBE) has been developed. SEM, AFM, XRD, and dislocation density measurements are carried out. The SiGe film's RMS roughness is 0.45nm, and dislocation density is 0.3×103cm2～1.2×103cm2. No dislocation accumulation exists on the boundary of the windows; this indicates the high quality of the SiGe film. The experiment results show that the technology presented in this paper meets the fabrication requirements of SiGe BiCMOS.     

Growth of GaAs1−xPx/GaAs and InAsxP1−x/InP strained quantum wells for optoelectronic devices by gas-source molecular beam epitaxy

In this paper we show that pseudomorphically strained heterostructures of InAs _x P_1−x /InP may be an alternative to lattice-matched heterostructures of In_1−x Ga _x As _y P_1−y /InP for optoelectronic applications. We first studied the group-V composition control in the gas-source molecular beam epitaxy (GSMBE) of the GaAs_1-x P _x /GaAs system. Then we studied GSMBE of strained InAs _x P_1−x /InP multiple quantum wells with the ternary well layer in the composition range 0.15 <x < 0.75. Structural and optical properties were characterized by high-resolution x-ray rocking curves, transmission electron microscopy, absorption and low-temperature photoluminescence measurements. High-quality multiple-quantum-well structures were obtained even for highly strained (up to 2.5%) samples. The achievement of sharp excitonic absorptions at 1.06, 1.3 and 1.55μm at room temperature from InAs _x P_1−x /InP quantum wells suggests the possibility of long-wavelength optoelectronic applications.     

Valence band offset in HgTe/Hg1−xCdxTe superlattices

The valence band offset (Λ) between HgTe and CdTe has been determined by means of an optical investigation of (112)B oriented HgTe/Hg_1−xCd_xTe superlattices. Based on the fact that the difference in energy between the first heavy hole and the first light hole subband is to a good approximation due primarily to Λ, it has been shown that Λ=580±40 meV at 5K. In addition Λ has a significant temperature dependence with a linear coefficient of −0.34±0.02 meV/K, i.e., Λ is 480±40 meV at room temperature.     

Arsenic incorporation in MBE grown Hg1−xCdxTe

The p-type doping of Hg_1−xCd_xTe (MCT) has proven to be a significant challenge in present day MCT-based detector technology. One of the most promising acceptor candidates, arsenic, behaves as an amphoteric dopant which can be activated as an acceptor during Hg-rich, low temperature annealing of as-grown molecular beam epitaxy (MBE) samples. This study focuses on developing an understanding of the microscopic behavior of arsenic incorporation during MBE growth. In particular, the question of whether arsenic incorporates as individual As atoms, as As₂ dimers, or as As₄ tetramers is addressed for MBE growth with an As₄ source. A quasithermodynamical model is employed to describe the MCT growth and As incorporation, with parameters fitted to an extensive database of samples grown at the Microphysics Laboratory. The best fits for growth temperatures between 175 and 185°C are obtained for arsenic incorporation as As₄ or possibly as As₄ clusters, with lower probabilities for As₂ and individual As atoms. Based on these results, we investigate the relaxed atomic configurations of As₄ and As₂ in bulk HgTe by ab initio total energy calculations. The calculations are performed in the pseudopotential density-functional framework within the local density approximation, employing supercells with periodic boundary conditions. The lattice distortions due to As₄ and As₂ in bulk HgTe are predicted to be modest due to the small size of these arsenic clusters.