Coatings against corrosion and microbial adhesion

A systematic study on anti‐corrosion and anti‐fouling effect of hydrophobic Langmuir–Blodgett and self‐assembled molecular layers deposited on metal surfaces, as well as anti‐microbial adhesion properties of coatings with biocide is presented. Both types of efficiencies produced by LB films are enhanced by Fe³⁺ ions built in the molecular film. The quaternary ammonium type biocide embedded into the cross‐linked gelatin decreased significantly the microbial adhesion, the biofilm formation.     

Highly Efficient Three Primary Color Organic Single‐Crystal Light‐Emitting Devices with Balanced Carrier Injection and Transport

Organic single crystals have a great potential in the field of organic optoelectronics because of their advantages of high carrier mobility and high thermal stability. However, the application of the organic single crystals in light‐emitting devices (OLEDs) has been limited by single‐layered structure with unbalanced carrier injection and transport. Here, fabrication of a multilayered‐structure crystal‐based OLED constitutes a major step toward balanced carrier injection and transport by introducing an anodic buffer layer and electron transport layer into the device structure. Three primary color single‐crystal‐based OLEDs based on the multilayered structure and molecular doping exhibit a maximum luminance and current efficiency of 820 cd cm^?2 and 0.9 cd A^?1, respectively, which are the highest performance to date for organic single‐crystal‐based OLEDs. This work paves the way toward high‐performance organic optoelectronic devices based on the organic single crystals.     

Isolation, DNA sequence and regulation of a new cell division cycle gene from the yeast Saccharomyces cerevisiae

A new complementation group of temperature-sensitive mutants of the yeast Saccharomyces cerevisiae (ts26-1 and ts26-2) has been isolated and characterized. This mutation maps at 40.7 cM from arg8 and 48.9 cM from arg1 on the left arm of chromosome XV of yeast, providing that it is a newly identified gene. The dumbbell-shape terminal morphology of the mutant cells at the restrictive temperatures is a characteristic of mutants defective in DNA replication. To study the defect of macromolecule synthesis in the mutant cells, DNA, RNA, and protein synthesis were measured at both permissive and restrictive temperatures. The data suggest that the primary defect of this mutation is at the initiation step of DNA synthesis. The gene has been cloned from an S. cerevisiae genomic library by rescue of the conditional lethality of the mutants. It is present as a single copy in the haploid genome. DNA-RNA hybridization of the gene has identified 1 kb RNA, which is under cell-division-cycle control. DNA sequence analysis of the gene has identified an open reading frame capable of encoding a protein of molecular weight 25,055 (214 amino acids).     

Dihydroazulene Photoswitch Operating in Sequential Tunneling Regime: Synthesis and Single‐Molecule Junction Studies

Molecular switches play a central role for the development of molecular electronics. In this work it is demonstrated that the reproducibility and robustness of a single‐molecule dihydroazulene (DHA)/vinylheptafulvene (VHF) switch can be remarkably enhanced if the switching kernel is weakly coupled to electrodes so that the electron transport goes by sequential tunneling. To assure weak coupling, the DHA switching kernel is modified by incorporating p‐MeSC₆H₄ end‐groups. Molecules are prepared by Suzuki cross‐couplings on suitable halogenated derivatives of DHA. The synthesis presents an expansion of our previously reported bromination–elimination–cross‐coupling protocol for functionalization of the DHA core. For all new derivatives the kinetics of DHA/VHF transition has been thoroughly studied in solution. The kinetics reveals the effect of sulfur end‐groups on the thermal ring‐closure of VHF. One derivative, incorporating a p‐MeSC₆H₄ anchoring group in one end, has been placed in a silver nanogap. Conductance measurements justify that transport through both DHA (high resistivity) and VHF (low resistivity) forms goes by sequential tunneling. The switching is fairly reversible and reenterable; after more than 20 “ON‐OFF” switchings, both DHA and VHF forms are still recognizable, albeit noticeably different from the original states.     

Molecular beam epitaxial growth of Cd<Subscript>1−y</Subscript>Zn<Subscript>y</Subscript>Se<Subscript>x</Subscript>Te<Subscript>1−x</Subscript> on Si(211)

We report on the first successful growth of the quaternary alloy Cd_1−yZn_ySe_xTe_1−x(211) on 3-in. Si(211) substrates using molecular beam epitaxy (MBE). The growth of CdZnSeTe was performed using a compound CdTe effusion source, a compound ZnTe source, and an elemental Se effusion source. The alloy compositions (x and y) of the Cd_1−yZn_ySe_xTe_1−x quaternary compound were controlled through the Se/CdTe and ZnTe/CdTe flux ratios, respectively. Our results indicated that the surface morphology of CdZnSeTe improves as the Zn concentration decreases, which fits well with our previous observation that the surface morphology of CdZnTe/Si is poorer than that of CdSeTe/Si. Although the x-ray full-width at half-maximums (FWHMs) of CdZnSeTe/Si with 4% of Zn + Se remain relatively constant regardless of the individual Zn and Se concentrations, etched-pit density (EPD) measurements exhibit a higher dislocation count on CdZnSeTe/Si layers with about 2% Zn and Se incorporated. The enhancement of threading dislocations in these alloys might be due to an alloy disorder effect between ZnSe and CdTe phases. Our results indicate that the CdZnSeTe/Si quaternary material with low Zn or low Se concentration (less than 1.5%) while maintaining 4% total Zn + Se concentration can be used as lattice-matching composite substrates for long-wavelength infrared (LWIR) HgCdTe as an alternative for CdZnTe/Si or CdSeTe/Si.     

Dual-band infrared detectors made on high-quality HgCdTe epilayers grown by molecular beam epitaxy on CdZnTe or CdTe/Ge substrates

In this paper, we present all the successive steps for realizing dual-band infrared detectors operating in the mid-wavelength infrared (MWIR) band. High crystalline quality HgCdTe multilayer stacks have been grown by molecular beam epitaxy (MBE) on CdZnTe and CdTe/Ge substrates. Material characterization in the light of high-resolution x-ray diffraction (HRXRD) results and dislocation density measurements are exposed in detail. These characterizations show some striking differences between structures grown on the two kinds of substrates. Device processing and readout circuit for 128×128 focal-plane array (FPA) fabrication are described. The electro-optical characteristics of the devices show that devices grown on Ge match those grown on CdZnTe substrates in terms of responsivity, noise measurements, and operability.     

分子筛脱水装置在轻烃回收系统中的应用

安塞油田轻烃回收系统利用原料伴生气采用高压低温、加压分馏的工艺回收液化气和轻烃。针对原料气及混合液烃中含水较高,冬季易产生冻堵的难题,重点介绍了分子筛的结构、特点、吸附工作原理和方法,脱水装置理论参数计算、工艺选择,以及在安塞油田轻烃回收系统现场使用情况,并对其使用前后的效果进行对比分析。分子筛脱水效果显著,解决了因原料气含水冻堵装置的问题,并且提高了产品产量和质量。     

Negative giant surface potential of vacuum-evaporated tris(7-propyl-8-hydroxyquinolinolato) aluminum(III) [Al(7-Prq)3] film

Negative giant surface potential was realized in a vacuum-evaporated film of tris(7-propyl-8-hydroxyquinolinolato) aluminum(III) [Al(7-Prq)₃]. Electroabsorption response of the film presented an inverted polarity to that of tris(8-hydroxyquinolinolato) aluminum (Alq₃), suggesting opposite noncentrosymmetry of molecular orientation. Asymmetric dice model with molecular geometric effect has been proposed, and propyl substitution at 7 position of the ligands was indicated to affects the molecular posture on the surface to invert the polarity of noncentrosymmetry. Our results opened a new possibility of controlling molecular orientation in a film for device applications.     

经典分子动力学模拟的主要技术

综述了分子动力学模拟的基本原理、发展过程及主要应用,介绍了原子间势函数的发展及势参数的确定,给出了分子动力学模拟中相关的有限差分算法、初始条件及边界条件的选取、平衡态系综及其调控、感兴趣量的提取及主要过程。最后还指出了分子动力学模拟方法本身进一步的研究方向。     

短/中波双色碲镉汞红外探测器制备研究

报道了基于分子束外延的短/中波双色碲镉汞材料及器件的最新研究进展.采用分子束外延方法制备出了高质量的短/中波双色碲镉汞材料,并通过提高材料质量将其表面缺陷密度控制在300 cm-2以内.在此基础上进一步优化了芯片制备工艺,尤其是在减小像元中心距方面作了优化.基于上述多项材料及器件工艺制备出了320×256短/中波双色碲...