Monitoring the Dynamic Process of Formation of Plasmonic Molecular Junctions during Single Nanoparticle Collisions

The capability to study the dynamic formation of plasmonic molecular junction is of fundamental importance, and it will provide new insights into molecular electronics/plasmonics, single‐entity electrochemistry, and nanooptoelectronics. Here, a facile method to form plasmonic molecular junctions is reported by utilizing single gold nanoparticle (NP) collision events at a highly curved gold nanoelectrode modified with a self‐assembled monolayer. By using time‐resolved electrochemical current measurement and surface‐enhanced Raman scattering spectroscopy, the current changes and the evolution of interfacial chemical bonding are successfully observed in the newly formed molecular tunnel junctions during and after the gold NP “hit‐n‐stay” and “hit‐n‐run” collision events. The results lead to an in‐depth understanding of the single NP motion and the associated molecular level changes during the formation of the plasmonic molecular junctions in a single NP collision event. This method also provides a new platform to study molecular changes at the single molecule level during electron transport in a dynamic molecular tunnel junction.     

Reliability analysis on systems with self-healing and self-repairing under different environments and shock models

Inspired by the process of self-healing of biological damage, high technology materials with self-healing and self-repairing mechanisms have been developed for high reliability and long lifetime. Therefore, the reliability modeling on intelligent systems with healing performance has become a research hotspot. Based on the diversity of healing mechanisms, this paper proposes a two-phase reliability model method on self-healing and self-repairing systems. Impacts of environments, shock loads, self-healing, and self-repairing mechanisms are taken into account in this novel model. Besides, system lifetime and some reliability indexes under two shock models are derived, respectively. Moreover, Monte Carlo simulations are conducted to verify the accuracy of reliability under two models. Finally, an engineering case of metallized film capacitor is provided to illustrate the effectiveness and applicability of the proposed models by comparing numerical results and simulation results.     

电力有源滤波器控制器的研究与仿真分析

建立了包括有源电力滤波器（ＡＰＦ）在内的公共连接点（ＰＣＣ）的数学模型;针对实际控制器计算过程中的时间延迟,提出对负载电流值进行预测的两种算法,对逆变器的开关元件提出一种新型脉宽调制（ＰＷＭ）控制方案,并采用电力电子仿真软件包进行了仿真验证。     

LiveROMS: A virtual environment for ocean numerical simulations

LiveROMS is a bootable DVD that contains an Linux-based computer operating system which has a complete, functioning version of the ROMS ocean circulation model and an Octave version of ROMSTOOLS. It allows students and scientists to experiment with this ocean numerical model, with just a basic knowledge of Linux.     

高层建筑结构力学模型仿真系统

该文介络了高层建筑结构力学模型仿真的理论基础、关键技术和实现途径,并简述了高层建筑结构多媒体仿真系统MSTB的设计特点。     

媒体舆论引导仿真

使用multi-Agent的建模思想,以现实为基础建立了一个舆论涌现的仿真模型.该模型主要由个体和媒体以及它们之间的规则组成.个体的属性包括了个体之间的信任度、个体观点的可信度和个体的从众性;媒体的属性包括媒体的影响范围和权威度.规则包括个体交互规则和个体与媒体的交互规则.通过仿真证明了模型是合理的,并且用该模型来仿真媒体对舆论演化的引导作用,从媒体的数量和报道频率2个方面研究媒体在舆论形成过程中的引导作用,结果发现积极媒体的数量越多对舆论的引导作用越强,媒体的报道频率增加会对舆论的形成产生积极效果,但是超过一定次数时对舆论的影响作用有限.最后通过对模拟结果的分析,提出了通过媒体来引导舆论的方式.     

一类多输入多输出系统的冗余设计

分析了多输入多输出多变量系统在某环节失效时系统的整体性,给出了针对开环传递函数矩阵以及解耦后新对象均为本质稳定对象时系统的冗余设计方法.该方法有效解决了某环节失效后对系统稳定性的影响,实现了复杂系统的容错控制.仿真结果表明,该冗余设计方法可行,能够实现系统的容错控制.     

Recovery of sensor embedded washing machines using a multi-kanban controlled disassembly line

Product recovery involves the recovery of materials and components from returned or end-of-life products. Disassembly, an element of product recovery, is the systematic separation of an assembly into its components, subassemblies or other groupings. Stricter environmental regulations together with dramatic decrease in natural resources and landfills have increased the importance of disassembly as all product recovery options require some level of disassembly. Due to changes made during the lifetime of a product by customers or service personnel, the number and the version of components prior to disassembly is unknown. Customers may also discriminate between and demand different versions of components. The existence of non-functional components further adds to the uncertainty associated with disassembly yield. Sensors implanted into products during their production can address this uncertainty by providing information on the number, condition and version of components prior to disassembly. In this study, we evaluate the impact of sensor embedded products (SEPs) on the various performance measures of a washing machine (WM) disassembly line controlled by a multi-kanban system, which takes into consideration the highly stochastic behavior of the line while managing material and kanban flows. First, separate design of experiments studies based on orthogonal arrays are performed for conventional products and SEPs. In order to observe the response of each experiment, detailed discrete event simulation (DES) models for both types of products are developed considering the precedence relationships among the components of a WM. Then, pair-wise t-tests are conducted to compare the two cases based on different performance measures. According to the results, SEPs provide significant reductions in all costs (viz., backorder, holding, disassembly, disposal, testing and transportation) while increasing revenue and profit.     

Quantum hydrodynamic simulation of discrete-dopant fluctuated physical quantities in nanoscale FinFET

Impact of the discrete dopants on device performance is crucial in determining the behavior of nanoscale semiconductor devices. Atomistic quantum mechanical device simulation for studying the effect of discrete dopants on device's physical quantities is urgent. This work explores the physics of discrete-dopant-induced characteristic fluctuations in 16-nm fin-typed field effect transistor (FinFET) devices. Discrete dopants are statistically positioned in the three-dimensional channel region to examine associated carrier's characteristic, concurrently capturing “dopant concentration variation” and “dopant position fluctuation”. An experimentally validated quantum hydrodynamic device simulation was conducted to investigate the potential profile and threshold voltage fluctuations of the 16-nm FinFET. Results of this study provide further insight into the problem of fluctuation and the mechanism of immunity against fluctuation in 16-nm devices.