超细活性氧化锌在轿车子午线轮胎胎面胶中的应用

对超细活性氧化锌在轿车子一轮胎胎面胶中的活尼效果分两组配方做了实验。结果表明,超细活性氧化锌由于活性高、等效用量小,与普通氧化锌相比有加快硫化速度的效果,并能改善胶料的加工性能,提高硫化胶的扯断永久变形、耐老化性和耐疲劳性能;超细活性氧化锌胶料加入活性碳酸钙后,能胶料生产成本,提高经济效益。     

AlGaAs/GaAs tunnel junctions in a 4-J tandem solar cell

TheⅢ-Ⅴcompound tandem solar cell is a third-generation new style solar cell with ultra-high efficiency. The energy band gaps of the sub-cells in a GaInP/GaAs/InGaAs/Ge 4-J tandem solar cell are 1.8,1.4,1.0 and 0.7 eV,respectively.In order to match the currents between sub-cells,tunnel junctions are used to connect the sub-cells.The characteristics of the tunnel junction,the material used in the tunnel junction,the compensation of the tunnel junction to the overall cell’s characteristics,the tunnel junction’s influence on the current density of sub-cells and the efficiency increase are discussed in the paper.An AlGaAs/GaAs tunnel junction is selected to simulate the cell’s overall characteristics by PC1D,current densities of 16.02,17.12,17.75 and 17.45 mA/cm² are observed,with a V_oc of 3.246 V,the energy conversion efficiency under AM0 is 33.9%.     

Hillock and Whisker Growth on Sn and SnCu Electrodeposits on a Substrate Not Forming Interfacial Intermetallic Compounds

Intermetallic compound (IMC) formation at the interface between the tin (Sn) plating and the copper (Cu) substrate of electronic components has been thought to produce compressive stress in Sn electrodeposits and cause the growth of Sn whiskers. To determine if interfacial IMC is a requirement for whisker growth, bright Sn and a Sn-Cu alloy were electroplated on a tungsten (W) substrate that does not form interfacial IMC with the Sn or Cu. At room temperature, conical Sn hillocks grew on the pure Sn deposits and Sn whiskers grew from the Sn-Cu alloy electrodeposits. These results demonstrate that interfacial IMC is not required for initial whisker growth.     

环氧塑封料的性能和应用研究

介绍了环氧塑封料的国内外发展概况,着重论述了其物理性能、机械性能、热性能、导热性能、电性能、化学性能、阻燃性能、贮存性能、封装性能,以及应用中封装工艺、缺陷的解决办法,并就发展前景发表了自己的看法.     

改善经编复合灯箱布横向模量的研究

分析了导致经编复合灯箱布的衬纬纱屈曲的原因,通过改变骨架织物结构和与ＰＶＣ热粘合过程提高灯箱布的横向模量,从而改善国产灯箱布的使用质量。     

Wetting interaction between Sn-Zn-Ag solders and Cu

The wetting interaction of Sn-(7.1–9)Zn-(0–3)Ag solders with Cu was investigated from 230°C to 300°C. The wetting time, wetting forces, and activation energy of the wetting reaction were studied. The wetting time decreases with increasing temperature and increases with Ag content. The wetting force exhibits a disproportional correlation to temperature rise, while no trend was observed with respect to Ag content. The wetting behavior was ascribed to the interaction between Cu and Zn. The AgZn₃ compound was formed at the interface when the solder contains 0.3% Ag and above, while it was formed within the bulk solder at 2% Ag and above.     

铜钼化合物氢还原制备铜钼复合粉研究

通过对铜钼化合物氢还原过程进行热力学分析,找到了制备均匀细颗粒铜钼复合粉的热力学途径。设计了封闭还原系统,用此系统进行氢气热还原,不仅使氢气得到充分利用,而且容易判断反应终点。通过系统内的特殊装置除水,降低了还原温度,在650℃下还原得到了混合均匀的铜钼复合粉。系统能彻底快速除去反应生成的水分,使反应物的湿度大大降低,确保能得到细颗粒的铜钼复合粉,其平均粒径小于70nm。     

铝基复合材料结构遥感器设计分析

空间遥感器光学反射镜的高刚度、支撑结构的合理性以及良好的热尺寸稳定性是保证其成像的关键因素。遥感器的重量对于运载平台也是至关重要的。针对这些问题,提出一种支撑杆的连接方式,能够减轻遥感器的重量。反射镜和背板采用高体份铝基复合材料,不仅保证高度、强度,而且因采用同一种材料从而避免了热环境对遥感器结构变形的影响。通过采用有限元仿真分析,在重力和10°温升情况下各反射镜的面形PV值〈55nm,满足〈1/10λ（λ=632.8nm）指标要求,整个结构的前三阶模态为115Hz,120Hz,203Hz。结果表明,采用支撑杆以及铝基复合材料的遥感器结构能够满足空间环境要求,为进一步工程应用提供了理论依据。     

Effect of Electromigration on the Mechanical Performance of Sn-3.5Ag Solder Joints with Ni and Ni-P Metallizations

The effect of moderate electric current density (1 × 10³ to 3 × 10³ A/cm²) on the mechanical properties of Ni-P/Sn-3.5Ag/Ni-P and Ni/Sn-3.5Ag/Ni solder joints was investigated using a microtensile test. Thermal aging was carried out at 160°C for 100 h while the current was passed. The interfacial microstructure and intermetallic compound (IMC) growth were analyzed. It was found that, at these levels of current density, there were no observable voids or hillocks. Samples aged at 160°C without current stressing failed mostly inside the bulk solder with significant prior plastic deformation. The passage of current was found to cause brittle failure of the solder joints and this tendency for brittle failure increased with increasing current density. Fractographic analysis showed that, in most of the electrically stressed samples, fracture occurred at the interface region between the solder and the joining metals. The critical current density that caused brittle fracture was about 2 × 10³ A/cm². Once brittle fracture occurred, the tensile toughness, defined as the energy per unit fractured area, was usually lower than ~5 kJ/m², compared with the case of ductile fracture where this value was typically greater than ~9 kJ/m². When comparing the two types of joint, the brittle failure was found to be more severe with the Ni than with the Ni-P joint. This work also found that the passage of electric current affects the IMC growth rate more significantly in the Ni than in the Ni-P joint. In the case of the Ni joint, the Ni₃Sn₄ IMC at the anode side was appreciably thicker than that formed at the cathode side. However, in the case of electroless Ni-P metallization, this difference was much smaller.