Ⅲ-Ⅴ族半导体化合物快速热退火扩Zn方法研究

以GaAs和InP材料为例,对化合物半导体材料中的快速热退火扩Zn可行性进行比较分析,研究表明,化合物半导体材料中快速热退火扩Zn可行性与化合物半导体材料的分解温度有着密切关系。化合物半导体材料分解温度越低,对扩散源、帽层和阻挡层要求越高。针对InP材料高于360℃就分解、低温Zn扩散困难的特点,提出了直接溅射Zn层在410℃低温扩散的方法。对InP快速热退火扩散结果进行分析,初步分析表明其掺杂机理是形成合金结。     

复合光路光学镀膜宽光谱膜厚监控系统

介绍一种复合光路宽光谱膜厚监控系统及其软硬件开发,对系统结构组成和工作原理进行说明。通过增加中间通光孔式的分光镜的复合光路,基于LabVIEW平台开发宽光谱膜厚监控软件,实现了基于宽光谱扫描法的宽光谱膜厚监控和基于极值法的光学膜厚监控的兼容并用,提高了光学镀膜膜厚监控的精确性和自动化,为传统光学镀膜设备的升级改造提出了一种可行性技术。     

Ad Hoc网络密钥分发效率对比及OPNET仿真

无线Ad-Hoc网络密钥分发可以基于多种基本结构和混合结构。为寻找到更加高效的密钥分发结构,在研究基本结构和原混合结构密钥分发效率的基础上,组合两种密钥分发效率高的基本结构得到两种新混合结构,研究了它们的密钥分发算法和通信量公式,通过对比得出新混合结构密钥分发效率高于原混合结构的密钥分发效率,然后通过OPNET仿真所得到图形和数据验证了上面结论和公式的正确性。     

Noun Sense Identification of Korean Nominal Compounds Based on Sentential Form Recovery

In a machine translation system, word sense disambiguation has an essential role in the proper translation of words when the target word can be translated differently depending on the context. Previous research on sense identification has mostly focused on adjacent words as context information. Therefore, in the case of nominal compounds, sense tagging of unit nouns mainly depended on other nouns surrounding the target word. In this paper, we present a practical method for the sense tagging of Korean unit nouns in a nominal compound. To overcome the weakness of traditional methods regarding the data sparseness problem, the proposed method adopts complement‐predicate relation knowledge that was constructed for machine translation systems. Our method is based on a sentential form recovery technique, which recognizes grammatical relationships between unit nouns. This technique makes use of the characteristics of Korean predicative nouns. To show that our method is effective on text in general domains, the experiments were performed on a test set randomly extracted from article titles in various newspaper sections.     

Effect of Electromigration on the Mechanical Performance of Sn-3.5Ag Solder Joints with Ni and Ni-P Metallizations

The effect of moderate electric current density (1 × 10³ to 3 × 10³ A/cm²) on the mechanical properties of Ni-P/Sn-3.5Ag/Ni-P and Ni/Sn-3.5Ag/Ni solder joints was investigated using a microtensile test. Thermal aging was carried out at 160°C for 100 h while the current was passed. The interfacial microstructure and intermetallic compound (IMC) growth were analyzed. It was found that, at these levels of current density, there were no observable voids or hillocks. Samples aged at 160°C without current stressing failed mostly inside the bulk solder with significant prior plastic deformation. The passage of current was found to cause brittle failure of the solder joints and this tendency for brittle failure increased with increasing current density. Fractographic analysis showed that, in most of the electrically stressed samples, fracture occurred at the interface region between the solder and the joining metals. The critical current density that caused brittle fracture was about 2 × 10³ A/cm². Once brittle fracture occurred, the tensile toughness, defined as the energy per unit fractured area, was usually lower than ~5 kJ/m², compared with the case of ductile fracture where this value was typically greater than ~9 kJ/m². When comparing the two types of joint, the brittle failure was found to be more severe with the Ni than with the Ni-P joint. This work also found that the passage of electric current affects the IMC growth rate more significantly in the Ni than in the Ni-P joint. In the case of the Ni joint, the Ni₃Sn₄ IMC at the anode side was appreciably thicker than that formed at the cathode side. However, in the case of electroless Ni-P metallization, this difference was much smaller.     

基于电流与电压复合控制的压电陶瓷驱动器

针对电压控制型压电陶瓷驱动器存在动态性能差的问题,及电流控制型压电陶瓷驱动器存在在静态下易充电饱和、难以获得稳定输出的问题,该文设计了基于电流与电压控制的复合型压电陶瓷驱动器.该驱动器具有电流电压双闭环反馈,使驱动器可兼具良好的静态和动态特性.在此基础上,分析了复合型驱动器的性能特点和各参数对其性能的影响,通过调整参数可改变驱动器性能,以满足不同需求.实验结果表明,该驱动器驱动行程为10 μm的压电陶瓷时,0～100 V阶跃信号响应时间小于400 μs,满行程带宽可达1.5 kHz,给定直流信号下可获得良好的稳定输出.     

一种新的双偶氮化合物的三阶非线性光学性能

合成了一种新的双偶氮化合物2,6-双[(2,4-二羟基苯基)偶氮]蒽醌,用IR,1 H NMR和元素分析表征了其结构.采用飞秒激光,运用简并四波混频法,研究了化合物在非共振状态下的三阶非线性光学性能.它的三阶非线性光学极化率χ(3)为3.37×10-13 esu,非线性折射率n2为6.21×10-12 esu,分子二阶超极化率γ为4.02×10-31 esu,响应时间τ为101 fs.分析了化合物的分子结构对三阶非线性光学性能的影响.增长共轭链,形成供吸供构型,增大取代基的吸或供电子能力等因素有利于获得较大的三阶非线性光学性能.     

化合物半导体光伏产品发展趋势探讨

目前世界上能源消耗以化石燃料为主。化石燃料消耗所带来的能源供应危机以及环境污染,使人类社会的可持续发展承受着越来越重的压力,因此,新能源的推广应用已成为全球共识。太阳能有可能成为满足未来能源需求的战略性能源。其中化合物半导体光伏产品是未来地面太阳能应用的重要发展方向,而铜铟镓硒（CIGS）体系由于其本身的优点,是新一代化合物半导体光伏产品的重要发展方向。该体系在产业化技术方面已经取得很大的进展,并已逐步开始大规模产业化实践。     

A MEANS TO REDUCE FORMATION OF PRECURSORS OF 2-TRANS-NONENAL IN BREWING*

A method is described whereby the precursors of 2-trans-nonenal may be estimated in worts and beers. Treatment of malt grist or malt with a variety of polar substances is shown to reduce or eliminate the production of nonenal precursors during mashing. Beers made from worts so treated have enhanced flavour stability over those made conventionally.     

Microstructure coarsening during static annealing of 60Sn40Pb solder joints: III intermetallic compound growth kientics

The growth of the total (Cu₃Sn+Cu₆Sn) intermetallic compound layer in Cu-60Sn40Pb solder joints during static annealing at 50°C to 150°C was described by the equation hi=h_o+A_o exp(−Q_a/RT)t^p with h_o=0–0.3 μm, p=0.38–0.70, A_o=1.9×10⁻⁴–3.4×10⁻⁴ m/s^p, and Q_a=25.5–30.9 kJ/mole. These constants are within the range of those obtained by others and give values of D_o and Q which are in reasonable accord with those for the diffusion coefficients in Cu₃Sn and Cu₆Sn₅ determined in diffusion couples. The deviation of the values of the time exponent p from the ideal of 0.5 for diffusion growth may be due to inaccuracies or errors pertaining to the measured thickness (especially h_o) and the complex nature of the diffusion process.