高温处理对镍诱导晶化硅上的薄膜晶体管性能的影响

采用标准双栅 CMOS工艺在镍诱导非晶硅横向晶化形成的多晶硅上制造了高性能的薄膜晶体管 ,并详细研究了器件制备前高温预处理对薄膜晶体管性能的影响 .实验发现不同的温度处理 ,将引起器件性能的显著变化 .在10 0 0℃预处理温度下获得了最好的器件性能 .10 0 0℃在 NMOS管中测得的电子迁移率达 314 cm2 / (V· s) ,分别比在 110 0℃和未做高温处理下的大 10 %和 2 2 % .10 0 0℃下器件的最大开关电流比也达到了 3× 10 8.对器件的进一步重复性研究证实了上述结果的可靠性     

化学成分对ASTMA890双相不锈钢组织的影响

研究化学成分对ASTM A890双相不锈钢组织的影响,利用金相显微镜对试样进行组织观察,结合体视学定量金相,利用最小二乘法对所测得数据进行拟合,建立双相不锈钢的组织及相比例与化学成分之间的直接联系。结果表明:铬当量Creq=26.68%、镍当量Nieq=11.89%时,可使双相不锈钢的相比例达到理想的1∶1,从而获得良好的综合性能。     

金属Ni诱导横向晶化的结构及工艺进程的优化

研究了用Ni进行金属诱导横向晶化(MILC)制备大尺寸多晶硅晶粒的结构改进和工艺条件优化,改进了MILC的结构,通过在埋层氧化层上开出与衬底相连的籽晶区,减少了大晶粒多晶硅中的缺陷分布;同时在前人的基础上优化了退火温度及时间,用Secco腐蚀液观察了晶粒大小和间界分布,最后得到了质量更好的大晶粒多晶硅,其大小在70～80μm左右.同时讨论了MILC后生成的NiSi2的去除方法,成功地去除了高温退火后生成的NiSi2,大大减小了Ni在多晶硅层中的分布,保证了将MILC方法成功应用于实现深亚微米器件的研究中.     

金属Ni诱导横向晶化的结构及工艺进程的优化

研究了用Ni进行金属诱导横向晶化(MILC)制备大尺寸多晶硅晶粒的结构改进和工艺条件优化,改进了MILC的结构,通过在埋层氧化层上开出与衬底相连的籽晶区,减少了大晶粒多晶硅中的缺陷分布;同时在前人的基础上优化了退火温度及时间,用Secco腐蚀液观察了晶粒大小和间界分布,最后得到了质量更好的大晶粒多晶硅,其大小在70～80μm左右.同时讨论了MILC后生成的NiSi2的去除方法,成功地去除了高温退火后生成的NiSi2,大大减小了Ni在多晶硅层中的分布,保证了将MILC方法成功应用于实现深亚微米器件的研究中.     

(Ca,Sr)(Zr,Ti)O_3系抗还原高频介质瓷料的研究

采用固相合成法制备了(Ca,Sr)(Zr,Ti)O3(简称CSZT)系电容器陶瓷材料,研究了主晶相组分对所制材料介电性能的影响。结果表明:通过调整主晶相CSZT中各组分的配比,再加入适量的烧结助剂,能得到一种可在还原气氛中烧结的高频介质瓷料,该瓷料可与镍内电极共烧,其相对介电常数约为89,介质损耗(tanδ)小于5×10–4,绝缘电阻达到1012Ω,介电常数温度系数为–1 037×10–6/℃。     

Shape‐Assisted 2D MOF/Graphene Derived Hybrids as Exceptional Lithium‐Ion Battery Electrodes

Herein, a novel polymer‐templated strategy is described to obtain 2D nickel‐based MOF nanosheets using Ni(OH)₂, squaric acid, and polyvinylpyrrolidone (PVP), where PVP has a dual role as a structure‐directing agent, as well as preventing agglomeration of the MOF nanosheets. Furthermore, a scalable method is developed to transform the 2D MOF sheets to Ni₇S₆/graphene nanosheet (GNS) heterobilayers by in situ sulfidation using thiourea as a sulfur source. The Ni₇S₆/GNS composite shows an excellent reversible capacity of 1010 mAh g^?1 at 0.12 A g^?1 with a Coulombic efficiency of 98% capacity retention. The electrochemical performance of the Ni₇S₆/GNS composite is superior not only to nickel sulfide/graphene‐based composites but also to other metal disulfide–based composite electrodes. Moreover, the Ni₇S₆/GNS anode exhibits excellent cycle stability (≈95% capacity retention after 2000 cycles). This outstanding electrochemical performance can be attributed to the synergistic effects of Ni₇S₆ and GNS, where GNS serves as a conducting matrix to support Ni₇S₆ nanosheets while Ni₇S₆ prevents restacking of GNS. This work opens up new opportunities in the design of novel functional heterostructures by hybridizing 2D MOF nanosheets with other 2D nanomaterials for electrochemical energy storage/conversion applications.     

占空比和羰基铁含量对镍铁氧体@羰基铁核壳粉体吸波性能的影响

针对镍铁氧体@羰基铁核壳粉体–石蜡复合体系,探讨了占空比和核壳粉体中羰基铁体积分数对其等效介电常数的影响,并预测了其吸波性能。研究结果表明:随着占空比和羰基铁体积分数的提高,复合体系的等效介电常数会有明显的增大;在相同的占空比下,随着羰基铁体积分数的提高,体系反射率有一个先减小后增大的过程,当羰基铁体积分数为30%时,反射率最小,达到–34 dB,吸收峰逐渐向低频移动;当羰基铁体积分数相同时,随着占空比的提高,反射率会逐渐变大,同时吸收峰也会朝低频移动。     

Low‐Noise Multispectral Photodetectors Made from All Solution‐Processed Inorganic Semiconductors

Infrared, visible, and multispectral photodetectors are important components for sensing, security and electronics applications. Current fabrication of these devices is based on inorganic materials grown by epitaxial techniques which are not compatible with low‐cost large‐scale processing. Here, air‐stable multispectral solution‐processed inorganic double heterostructure photodetectors, using PbS quantum dots (QDs) as the photoactive layer, colloidal ZnO nanoparticles as the electron transport/hole blocking layer (ETL/HBL), and solution‐derived NiO as the hole transport/electron blocking layer (HTL/EBL) are reported. The resulting device has low dark current density of 20 nA cm^‐2 with a noise equivalent power (NEP) on the order of tens of picowatts across the detection spectra and a specific detectivity (D*) value of 1.2 × 10¹² cm Hz^1/2 W^‐1. These parameters are comparable to commercially available Si, Ge, and InGaAs photodetectors. The devices have a linear dynamic range (LDR) over 65 dB and a bandwidth over 35 kHz, which are sufficient for imaging applications. Finally, these solution‐processed inorganic devices have a long storage lifetime in air, even without encapsulation.     

Study of NiSi/Si Interface by Cross-Section Transmission Electron Microscopy

采用不同硅化工艺制备了NiSi薄膜并用剖面透射电镜(XTEM)对样品的NiSi/Si界面进行了研究.在未掺杂和掺杂(包括As和B)的硅衬底上通过物理溅射淀积Ni薄膜,经快速热处理过程(RTP)完成硅化反应.X射线衍射和喇曼散射谱分析表明在各种样品中都形成了NiSi.还研究了硅衬底掺杂和退火过程对NiSi/Si界面的影响.研究表明:使用一步RTP形成NiSi的硅化工艺,在未掺杂和掺As的硅衬底上,NiSi/Si界面较粗糙;而使用两步RTP形成NiSi所对应的NiSi/Si界面要比一步RTP的平坦得多.高分辨率XTEM分析表明,在所有样品中都形成了沿衬底硅〈111〉方向的轴延-NiSi薄膜中的一些特定晶面与衬底硅中的(111)面对准生长.同时讨论了轴延中的晶面失配问题.     

Effect of Nickel Contamination on Formation of Denuded Zone in Czochralski Silicon

研究了过渡族金属镍在快速热处理作用下对直拉单晶硅中洁净区形成的影响.实验结果发现:硅中魔幻洁净区(MDZ)形成后,氧沉淀及其诱生缺陷能有效地吸杂金属镍;而沾污金属镍的硅中,随后的快速热处理工艺不能形成MDZ,硅片近表面出现大量沉淀.采用传统的内吸杂工艺,镍沾污的次序对洁净区的形成没有影响.实验表明由于硅片表面形成的镍硅化合物的晶格常数比硅小,所以在硅片近表面产生高浓度的空位,导致近表面的氧依然能够在MDZ工艺中形成沉淀.