Ni基催化剂载体对甲烷自热重整制氢反应的影响

考察了不同载体及Zr添加量对甲烷自热重整制氢反应的影响。结果表明，载体为ZrAlO时，Ni基催化剂的催化性能最好，且CH₄转化率和H₂收率随着反应温度的升高而增大，850 ℃时CH₄转化率保持在100％，H₂收率达到79％。对不同Zr添加量的Ni基催化剂XRD谱图分析结果发现，随着Zr的添加量的增加，Al₂O₃和NiAl₂O₄的衍射峰逐渐变得弥散，而ZrO₂的衍射峰逐渐尖锐，且主要以四方相的亚稳态晶相存在。新生成的Zr₅Al₃O_0.5物种占据了本可以生成NiAl₂O₄尖晶石的位置，提高了NiO的分散性，从而提高了催化剂的活性。     

溶胶-凝胶法制备Na_2WO_4~-Mn/SiO_2催化剂及其甲烷氧化偶联反应性能的研究

采用溶胶-凝胶法制备了一系列5%Na2WO4-2%Mn/SiO2催化剂;用XRD、XPS、BET、O2-TPD和CO2-TPD等方法对催化剂进行了表征,并考察了对甲烷氧化偶联反应的催化性能。结果表明,与常规浸渍法相比,采用溶胶-凝胶法制备的Na2WO4-Mn/SiO2催化剂中W和Mn的原子浓度在催化剂表面和体相分布较为接近,而且两种制备方法所得的催化剂具有相似的催化性能,Na2WO4与α-方石英之间的相互作用,催化剂释放晶格氧的能力,碱性强弱是影响甲烷氧化偶联活性的关键因素。     

PECVD沉积SiO2和SiNX对p-GaN的影响

在等离子增强化学气相沉积法(PECVD)沉积SiO2和SiNX掩蔽层过程中，分解等离子体中浓度较高的H原子使Mg-受主钝化，同时在p-GaN材料表面发生反应形成浅施主特性的N■■空位。高能量离子轰击造成的材料深能级缺陷增多以及沉积形成致密的SiO2和SiNX材料，阻碍了H原子向外扩散，使H原子在Ni/Au电极与p-GaN的界面处聚集，造成p-GaN近表面附近区域Mg-H络合物密度的提高，空穴浓度急剧下降，导致Ni/Au透明电极I-V特性严重恶化。选择较低的射频功率(15 W,13.56 MHz)沉积模式，经过适当的退火，可以减小沉积SiO2过程对p-GaN的影响。     

Aging study on interfacial microstructure and solder-ball shear strength of a wafer-level chip-size package with Au/Ni metallization on a Cu pad

Eutectic solder balls (63Sn-37Pb) joined to Cu pads with an Au/Ni metallization have been widely used in wafer-level chip-size package (WLCSP) technology for providing electrical and mechanical interconnections between components. However, some reliability issues must be addressed regarding the intermetallic compounds (IMCs). The formation of a brittle IMC layer between the solder/Cu pad interface impacts considerably upon the solder-ball shear strength. In addition, it will degrade the long-term operating reliability of the WLCSP. This study investigates, by means of experiments, the growth of the IMC layer under isothermal aging for the eutectic Sn-Pb solder reflowed on a Cu pad with an Au/Ni metallization. Forming the Cu pad with an Au/Ni metallization was achieved by a simple semiconductor-manufacturing process. The effects of the intermetallic layer on solder-ball shear strength were examined for various parameters, including the thickness of the Au layer, solder-ball size, and the diameter of the Cu pad. Experimental results indicate that two IMC layers, Au_0.5Ni_0.5Sn₄ and Ni₃Sn₄, form at the solder/Cu pad interface after aging. The Au_0.5Ni_0.5Sn₄ intermetallic layer dominates the total thickness of the IMC layer and grows with aging time while the solder-ball shear strength decreases after aging. The degradation of the solder-ball shear strength was found to be caused mainly by the formation of the Au_0.5Ni_0.5Sn₄ layer. The experimental results established that a thinner Au layer on Cu pad can effectively control the degradation of solder-ball shear strength, and this is especially true for smaller ball sizes.     

自对准硅化物工艺研究

对适用于深亚微米CMOS器件的各种自对准硅化物工艺进行了讨论，并对不同硅化物薄膜的特性进行了分析。结果表明，随着大规模集成电路特征尺寸的不断缩减及其对器件性能要求的不断提高，常规Ti和Co的自对准硅化物工艺已经不能满足器件特征尺寸进一步缩小的需要；Ni的自对准硅化物工艺可以很好地满足超深亚微米及纳米器件对硅化物的需求。     

1Cr18Ni9Ti不锈钢摩擦过程中的扩散与相变

对 1 Cr1 8Ni9Ti奥氏体不锈钢摩擦过程中的组织与成分变化进行了研究。结果表明 :1 Cr1 8Ni9Ti不锈钢经摩擦之后碳元素和其它合金元素在表面发生了明显的富集与扩散。但(马氏体 )相变只有在转速和压力比较低、摩擦时间较长、磨损速率较小各合金元素充分扩散的条件下才会发生。晶粒细化的程度受摩擦条件变化的影响     

高可靠镀Ni／Au工艺及其在微波PTFE电路上的应用

介绍了高可靠电镀Ｎｉ／Ａｕ工艺在ＰＴＦＥ微波印制电路上的应用，并分析了氨基磺酸盐镀软镍和亚硫酸盐镀软金工艺的影响因素及提高Ｎｉ／Ａｕ镀层之间附着力的措施。通过实验及应用证明了与直接镀金工艺相比，在软基材ＰＴＦＥ敷铜箔板上镀Ｎｉ／Ａｕ工艺能大大提高微波电路的可焊性，高温稳定性和长期可靠性，并且用其所制作的微波器件的高频性能也优于直接镀金工业。     

焊缝及焊接材料中Ni元素可见光谱快速分析方法研究

使用数字化技术对部分合金钢焊材和焊缝中Ni元素可见光谱进行了分析测定.研究了Ni485.54nm分析谱线组的数字化处理技术,探索了利用Ni元素可见光谱分析技术进行焊材和焊缝Ni元素含量分析及牌号鉴别的方法.结果可用于常用合金钢焊材和焊缝中Ni元素的定性、定量分析和材料牌号鉴别.     

精炼30Cr2Ni4MoV低压转子材料在超超临界机组上的应用

采用Ansys有限元方法计算了超超临界机组低压转子的温度场,并整理了精练30Cr2N i4MoV低压转子材料的物理化学特性。通过对两者的分析对比,认为超超临界机组的低压转子采用精练30Cr2N i4MoV完全可以满足设计要求。     

Synthesis and electrochemical studies of the 4 V cathode, Li(Ni2/3Mn1/3)O2

Layered Li(Ni_2/3Mn_1/3)O₂ compounds are prepared by freeze-drying, mixed carbonate and molten salt methods at high temperature. The phases are characterized by X-ray diffraction, Rietveld refinement, and other methods. Electrochemical properties are studied versus Li-metal by charge–discharge cycling and cyclic voltammetry (CV). The compound prepared by the carbonate route shows a stable capacity of 145 (±3) mAh g⁻¹ up to 100 cycles in the range 2.5–4.3 V at 22 mA g⁻¹. In the range 2.5–4.4 V at 22 mA g⁻¹, the compound prepared by molten salt method has a stable capacity of 135 (±3) mAh g⁻¹ up to 50 cycles and retains 96% of this value after 100 cycles. Capacity-fading is observed in all the compounds when cycled in the range 2.5–4.5 V. All the compounds display a clear redox process at 3.65–4.0 V that corresponds to the Ni^2+/3+–Ni^3+/4+ couple.