Science in High Magnetic Fields: What Could Be Learned?

High magnetic fields are one of the most powerful tools available to scientists for the study, modification and control of matter. This includes the knowledge on correlations effects, interaction mechanisms, structural information and understanding of mesoscopic effects. In this context, a review of recent scientific achievements at the Grenoble High Magnetic Laboratory is given to illustrate, on specific examples, the power of the Magnetic Field probe.     

Curie Temperatures of III–V Diluted Magnetic Semiconductors Calculated from First-Principles in Mean Field Approximation

Electronic structure and ferromagnetism in III–V compound-based diluted magnetic semiconductors (DMS) are investigated based on first-principles calculations by using the Korringa-Kohn-Rostoker method combined with the coherent-potential-approximation. The stability of the ferromagnetic phase in GaN-, GaAs-, GaP-, GaSb-based DMS is investigated systematically. The calculations show that 3d-impurities from the first-half of the transition metal series favor the ferromagnetic state, while impurities from the latter-half of the series exhibit spin-glass behavior. This chemical trend in the magnetism is explained by the double exchange mechanism taking the local symmetry at the impurity gap states into account. Curie temperatures of GaAs- and GaN-based DMS are estimated by using the Heisenberg model in a mean field approximation with the parameters calculated from first-principles. It is suggested that room-temperature ferromagnetism can be realized in these systems.     

厚膜永磁阵列微致动器的磁路研究

研究了厚膜永磁阵列微致动器中的磁场分布，并研究了永磁阵列单元几何尺寸对微致动器电磁力的影响。结果表明，厚膜永磁阵列单元高宽比和磁体单元间隔对微致动器电磁力影响较大磁徕单元高宽比为0．7是一个比较合适的尺寸。     

流量比对等离子体基团分布和薄膜结构的影响

使用光强标定的发射光谱(AOES)测量了CHF3／C6H6混合气体的微波电子回旋共振(ECR)放电等离子体中基团的分布状态。实验发现随着CHF3流量的增加，成膜基团CF、CF2、CH等的相对密度增大，而刻蚀基团F的密度也会增加，从而使得a—C：F薄膜的沉积速率降低。同时红外吸收谱(IR)分析表明，在高CHF3流量下沉积的a—C：F薄膜中含有更高的C—F键成分。可见在a—C：F薄膜的制备中CHF3／(CHF3 C6H6)流量比是重要的控制参量。     

Low Temperature Physics at the Laboratoire National des Champs Magnétiques Pulsés in Toulouse

An overview over past and present activities and future developments at the Toulouse pulsed magnetic field facility is given, both as far as technical developments of the infrastructure, as well as low temperature physics performed at the LNCMP are concerned.     

Noise-Assisted Signal Reception in Threshold Neuron

1IntroductionSometi mes,noise can i mprove signal transmission orsignal processing in a nonlinear system.This phe-nomenonis the so-called Stochastic Resonance(SR)[1].Most studies of SRinvolve asubthresholdsignal througha single nonlinear systemand the non…     

Fe3O4/PSt/TiO2多层包覆电磁响应微球的制备

首先采用分散聚合法将自制的Fe3O4磁流体和苯乙烯反应合成有磁核的Fe3O4/PSt磁性聚合物微球，然后，用非均匀成核水解反应在Fe3O4/PSt微球外包覆无定形二氧化钛，获得Fe3O4/PSt/TiO2复合微粒。用红外光谱、扫描电镜和热分析对粒子的形貌和结构进行了表征。并测试了微粒的介电性能和磁性，结果表明，所制得复合微粒有良好的电、磁响应性。     

磁浸没透镜的宽束曲轴像差分析的微分代数方法研究

微分代数是计算机数值分析领域中的一个非常有效的方法,可以实现任意高阶微分的准确计算.本文根据微分代数方法的基本原理,将其引入到磁浸没透镜的宽束曲轴像差的分析计算中,得到了任意阶曲轴像差的微分代数表达式.文中针对轴上磁场具有某种解析表达式的一个实际的磁浸没透镜系统,利用微分代数的曲轴像差分析方法,计算了它的曲轴像差,并给出了全部二阶和三阶几何像差的分布图形.     

电子电路中抗EMI设计

电磁干扰(EMI)可分为传导干扰和辐射干扰,消除干扰的方法可以采用硬件方法和软件方法,硬件方法主要有屏蔽、接地、隔离和滤波等,而软件方法主要是滤波。笔者对各种方法进行总结,并指出各种方法所存在的问题以及适用场合,并对一些常用方法提出改进措施。     

Magnetic effects of direct ion implantation of Mn and Fe into p-GaN

In p-GaN implanted with Mn (3×10¹⁶ cm⁻² at 250 keV), the material after annealing shows ferromagnetic properties below 250 K. Cross-sectional transmission electron microscopy (TEM) revealed the presence of platelet structures with hexagonal symmetry. These regions are most likely Ga_xMn_1−xN, which produce the ferromagnetic contribution to the magnetization. In p-GaN implanted with Fe, the material after annealing showed ferromagnetic properties at temperatures that were dependent on the Fe dose, but were below 200 K in all cases. In these samples, TEM and diffraction analysis did not reveal any secondary phase formation. The results for the Fe implantation are similar to those reported for Fe doping during epitaxial growth of GaN.