复合聚全氟乙丙烯材料的介电及高频击穿性能研究

在聚全氟乙丙烯(FEP)中添加 TiO_2和 Al_2O_3,通过热压成型的方法制备了 FEP/TiO_2复合材料和 FEP/Al_2O_3复合材料,研究了氧化物添加量对复合材料介电常数、介电损耗和高频击穿性能的影响。结果表明,随氧化物含量的增加,复合材料的介电常数和介电损耗均增加;在同一添加量下,TiO_2对复合体系的介电性能影响较大。FEP/TiO_2复合材料的高频击穿性能随 TiO_2含量的增加而下降,在 TiO_2含量为4.0%(质量分数,下同)时,复合材料的损伤阈值已降为 FEP 材料损伤阈值的48.9 %。而 FEP/Al_2O_3复合材料的高频击穿性能随 Al_2O_3含量的增加而升高,当 Al_2O_3含量为1.2%时,复合材料的损伤阈值已增大到 FEP 材料损伤阈值的2倍,达到313 J/m~2。     

Influence of the Preheat Treatment on the Microstructure and Properties of X37CrMoV5-1 Steel

The technological properties of the hot-work tool steels depend on their microstructural quality induced by the production process and the heat treatment. One of the frequently applied methods to improve microstructure is preheat treatment. The treatment of carbonitriding X37CrMoV5-1 steel has been investigated in fluidized bed furnaces. Thickness and phase composition have been conducted using optical microscopy Neophot 32 and scanning microscopy, JEOL 5400, after etching in nital.     

坨五站中间乳化层快速增长原因及治理方案

胜利采油厂坨五站高含水(95％)原油化学预脱水中，二级沉降罐内油水相之间的中间乳化层增长迅速，引起了一系列问题。现场调查和大量室内测试结果表明，产生这一现象的原因有：油溶性破乳剂WD-1加入点不合理。有2／3的含水原油在通过油水分离器之后才与破乳剂混合；二级沉降罐进油口伸入油相内，油流的冲击达不到中间层；WD-1对坨五站混合原油中的稠油破乳脱水性能欠佳，不能适应坨五站混合原油组成和含水的变化。针对上述各种原因筛选出了性能更好的一种破乳剂1916。根据确定的几种原因采取了相应的措施：将破乳剂加入点改在3个并联油水分离器之前；将二级沉降罐的进油口移到水相内；改用筛选出的破乳剂1916，结果使中间乳化层的增长受到了抑制。图2表4参2。     

不同加工工艺的锑化镓晶片损伤研究

用透射电子显微镜、扫描电镜对锑化镓材料切、磨、抛等加工工艺引入的表面损伤进行观察和检测。结果表明：切割加工是锑化镓单晶晶片表面损伤层引入的主要工序；锑化镓单晶切割片表面极不平整，有金刚砂所引起的较粗桔皮皱纹；其表面损伤层深度≤30μm；双面研磨的锑化镓晶片表面仍有较粗桔皮皱纹，但比切割片的要细，而且桔皮皱纹的深浅随磨砂（Al2O3)粒径的减小而变细变浅；晶片的表面损伤层深度（≤5μm）也随着磨砂粒径的减小而减小。一般情况下，其损伤层的深度约为磨砂粒径的1/2。机械化学抛光加工的锑化镓晶片表面的SEM像观察不到桔皮皱纹；其损伤层深度约55nm。     

针对混合应用业务的ARQ改进方案

在高速无线通信中,自动请求重传(ARQ)是链路层不可缺少的技术,它通过重传向上层屏蔽无线链路上包的丢失。随着无线网络的发展,无线传输速率不断提高,应用的业务类型也越来越广泛。目前,众多ARQ技术的研究都集中在如何提高该技术的确认效率,以适应更高的传输速率,但鲜有研究着手于如何使ARQ能够更好地应用于混合业务环境。针对混合业务环境下的ARQ改进提出了2种方案,并给出其中1种在实际应用中的改善效果。     

The flame retardant mechanism of polyolefins modified with chalk and silicone elastomer

This paper presents the current understanding of the flame retardant mechanism of Casico?. The study includes the flame retardant effect of each individual component: ethylene–acrylate copolymer, chalk and silicone elastomer, as well as the formation of an intumescent structure during heating. The flame retardant properties were investigated by cone calorimetry and oxygen index tests. To obtain insight into the flame retardant mechanism, heat treatment under different conditions has also been performed. The results indicate that the flame retardant mechanism of Casico is complex and is related to a number of reactions, e.g. ester pyrolysis of acrylate groups, formation of carbon dioxide by reaction between carboxylic acid and chalk, ionomer formation and formation of an intumescent structure stabilized by a protecting char. Special emphasis is given to the formation of the intumescent structure and its molecular structure as evaluated from ¹³C MAS‐NMR and ²⁹Si MAS‐NMR, ESCA and XRD analysis. After treatment at 500°C the intumescent structure consists mainly of silicon oxides and calcium carbonate and after treatment at 1000°C the intumescent structure consists of calcium silicate, calcium oxide and calcium hydroxide. Copyright © 2003 John Wiley & Sons, Ltd.     

无线网状网技术与应用

无线网状网(WMNs)由网状路由器节点和客户机节点组成,其中的网状路由器节点组成了无线网状网的网络骨干,其移动性很小。他们一起为无线网状网和其他常规无线网络的客户机节点提供网络的无线接入。WMNs技术结合了中心式控制的蜂窝网与分布式控制的无线自组织网的优点,可有效克服这两种技术的缺陷并显著提高无线网络的性能,已经成为下一代无线通信网络的研究热点之一。WMNs可为无线个域网、局域网、校园网、城域网的一系列应用提供高速无线宽带接入服务。虽然目前WMNs技术发展很快,但其协议栈各层仍存在许多有待研究的课题。首先简要介绍了无线网状网的结构与特点;随后重点分析了其主要的几个应用领域;最后探讨了WMNs各协议层的研究现状与关键技术,并分析了该技术存在的问题及未来的研究方向。     

HART协议物理层设备的测试（II）

本文介绍HART协议物理层设备的测试要求、测试设备、测试方法及测试时的一些特别说明。     

Rutile-type TiO2 thin film for high-k gate insulator

We investigated rutile-type titanium dioxide (TiO₂) films for possible use as a high-k gate insulator. The TiO₂ thin films were directly deposited on Si substrates using a RF magnetron sputtering method with a sintered oxide target. A single phase of rutile-type TiO₂ whose dielectric constant of approximately 75 was obtained when the film was deposited in an inert gas atmosphere and annealed at 800 °C in an oxidizing gas atmosphere. The oxygen ions were deficient in the as-deposited film, and consequently, a sufficient oxygen supply was needed to crystallize the film to a single phase of rutile during the post-annealing. However, the interfacial SiO₂ layer between the TiO₂ and the Si substrate simultaneously grew thicker than 2 nm. As the interfacial SiO₂ grew, the leakage current was decreased and the equivalent oxide thickness was increased, in the Au/rutile-type TiO₂/Si capacitor. Therefore, we concluded that the growth of the interfacial SiO₂ layer thicker than 2 nm is inevitable to form the single phase of rutile-type TiO₂ and to decrease the leakage.     

W‐band physical layer design issues in the context of the DAVID–DCE experiment

This paper aims at focusing on the aspects concerning the physical layer design for an innovative satellite communication experiment. Such an experiment, denoted by the acronym DAVID–DCE (Data and Video Interactive Distribution—Data Collection Experiment) is based on the exploitation of the W‐band (75–110 GHz) for high‐bit‐rate satellite transmission. The potential advantages of using of the W‐band are mainly related to the great bandwidth availability, and to the absence of interference. Moreover, an expected result of the experiment is a substantive improvement in the communication system's performances in the presence of meteorological phenomena (e.g. rain) as compared with the more conventional Ka‐band satellite transmission. On the other hand, problems to be faced concern the non‐ideal behaviours of hardware devices employed for high‐frequency digital transmission. In particular, carrier recovery and timing recovery are the most crucial signal‐processing tasks to be carefully considered in the design of the physical level of the system, because they considerably suffer from hardware impairments. The purpose of this work is to illustrate the proposed solutions in terms of the most critical modulation, demodulation and synchronization design issues, together with the effects of non‐ideal behaviours of hardware components on BER performances. Copyright © 2004 John Wiley & Sons, Ltd.