异丙氧基官能化聚芳酰胺高温热处理高效制备聚对苯撑苯并双噁唑

针对高性能纤维聚对苯撑苯并双噁唑（PBO）现有制备方法单体合成困难、聚合工艺复杂及纺丝难度大等问题,采用高温热处理方法制备PBO. 合成4,6-二异丙氧基-1,3-二氨基苯作为单体,将其与对苯二甲酰氯缩聚制得PBO前驱体-异丙氧基官能化聚芳酰胺;该前驱体通过静电纺丝制成纳米纤维薄膜,并在350 ℃与氩气气氛等条件下,通过热处理成功实现了前驱体主链的分子内环化、制得目标PBO,制备出的PBO具有高达562 ℃的热降解温度。该方法摆脱了对传统易氧化4,6-二氨基-间苯二酚单体的依赖,显著降低了聚合和成型难度,丰富了PBO的制备方法学。     

GAP基自修复粘结剂的制备及性能

为了延长粘结剂的储存寿命,采用一步法将具有可自修复性能的双硫官能团引入叠氮粘结剂中,首次合成了具有自修复性能的聚叠氮缩水甘油醚(GAP)基自修复粘结剂。通过傅里叶红外光谱(FTIR)、X射线衍射(XRD)和光学显微镜对其结构和表面形貌进行表征,在此基础上,通过自修复前后拉伸强度的变化,考察了不同自修复温度和不同自修复时间下的自修复效率。结果显示:合成的GAP基自修复粘结剂具有聚氨酯结构,60℃下24 h后表面裂纹基本愈合完全。提高自修复温度和延长自修复时间,均有助于提高体系的自修复效率。同时随着交联剂质量分数的增加,自修复效率先提高后降低,其中交联剂质量分数为8%的配方,自修复效率可达98.2%,相对于自修复效率为61.7%的对比样,表明双硫官能团的引入能够提高体系的自修复效率。     

通信电源用电缆及其通信行业标准

本文重点解读通信电源用交联聚烯烃绝缘电缆通信行业标准的主要内容,介绍了交联聚烯烃绝缘的技术特点.评述了聚氯乙烯（PVC）绝缘电缆在环保和安全方面存在的不足.通过比较说明了交联聚烯烃绝缘电缆相对于PVC绝缘电缆和非交联的无卤低烟阻燃聚烯烃绝缘电缆所具有的优势.本文还介绍了低压电缆制造技术,特别是交联工艺路线、电缆料添加剂及电缆料配混技术进展等方面的内容,对未来通信电源用电缆的发展以及标准修改内容提出了建议.     

A Simple and Effective Modification of PCBM for Use as an Electron Acceptor in Efficient Bulk Heterojunction Solar Cells

[6,6]‐phenyl‐C‐61‐butyric acid methyl ester (PCBM) and poly(3‐hexylthiophene) (P3HT) are the most widely used acceptor and donor materials, respectively, in polymer solar cells (PSCs). However, the low LUMO (lowest unoccupied molecular orbital) energy level of PCBM limits the open circuit voltage (V_oc) of the PSCs based on P3HT. Herein a simple, low‐cost and effective approach of modifying PCBM and improving its absorption is reported which can be extended to all fullerene derivatives with an ester structure. In particular, PCBM is hydrolyzed to carboxylic acid and then converted to the corresponding carbonyl chloride. The latter is condensed with 4‐nitro‐4’‐hydroxy‐α‐cyanostilbene to afford the modified fullerene F . It is more soluble than PCBM in common organic solvents due to the increase of the organic moiety. Both solutions and thin films of F show stronger absorption than PCBM in the range of 250–900 nm. The electrochemical properties and electronic energy levels of F and PCBM are measured by cyclic voltammetry. The LUMO energy level of F is 0.25 eV higher than that of PCBM. The PSCs based on P3HT with F as an acceptor shows a higher V_oc of 0.86 V and a short circuit current (J_sc) of 8.5 mA cm^?2, resulting in a power conversion efficiency (PCE) of 4.23%, while the PSC based on P3HT:PCBM shows a PCE of about 2.93% under the same conditions. The results indicate that the modified PCBM, i.e., F , is an excellent acceptor for PSC based on bulk heterojunction active layers. A maximum overall PCE of 5.25% is achieved with the PSC based on the P3HT: F blend deposited from a mixture of solvents (chloroform/acetone) and subsequent thermal annealing at 120 °C.     

Temperature gradient controlled crystal growth from TIPS pentacene-poly(α-methyl styrene) blends for improving performance of organic thin film transistors

6,13-bis(triisopropylsilylethynyl) pentacene (TIPS pentacene) from simple drop casting typically forms crystals with random orientation and poor areal coverage, which leads to device-to-device performance variation of organic thin film transistors (OTFTs). Previously, a temperature gradient technique was developed to address these problems. However, this approach simultaneously introduced thermal cracks due to the thermally induced stress during crystallization. These thermal cracks accounted for a reduction of charge transport, thereby impacting the device performance of TIPS pentacene based OTFTs. In this work, an insulating polymer, poly(α-methyl styrene) (PαMS) was blended with TIPS pentacene to relieve the thermal stress and effectively prevent the generation of thermal cracks. The results demonstrate that the incorporation of PαMS polymer combined with the temperature gradient technique improves both the hole mobility and performance consistency of TIPS pentacene based OTFTs.     

π共轭聚吡咯衍生物非线性响应时间的测量

合成一种新型π共轭聚吡咯衍生物———聚吡咯 { 2 ,5 二 [(对硝基 )苯甲烯 ]} (PPNB) ,制备了该高分子的N 甲基 2 吡咯烷酮 (NMP)溶液和聚乙烯醇 (PVA)复合薄膜。用 5 32nm ,8ns脉冲激光作抽运光源 ,氦氖激光 (6 32 8nm ,CW)为探测光源 ,测量了该高分子的非线性光学响应过程 ,测得PPNB/NMP溶液和PPNB/PVA薄膜的激光诱导折射率的建立时间分别为 4μs和 5 μs,恢复时间分别为 30ms和 5ms。引起这种非线性效应的机制可能主要是热光非线性效应。     

Spontaneous Phase Separation of Poly(3‐hexylthiophene)s with Different Regioregularity for a Stretchable Semiconducting Film

Highly regioregular (RR) poly(3‐hexylthiophene)s PHTs are known to exhibit excellent electrical properties in comparison to chemically identical but regiorandom (rr) PHTs. In this study, distinct RR (97% and 55%)‐graded PHTs are subjected to solution blending to spontaneously separate the high‐RR PHT chains from the low‐RR PHT media and develop highly conjugated nanodomains in both solution and film. In the spun‐cast blend films, the rr PHT matrix imparts sufficient deformability of the channel layer required for stretchable organic thin‐film transistors (OTFTs), compared to neat RR PHTs and blends with a deformable polymer. OTFTs including RR PHT/rr PHT blend films show excellent hole mobility (µ) values up to 0.13 cm² V^?1 s^?1, surpassing that of the best RR PHT films (0.026 cm² V^?1 s^?1) fabricated by ultrasound solution pretreatment. Furthermore, a 50% stretched RR PHT/rr PHT film maintains ≈55% of its µ value at no strain, while RR PHT films show a sudden decrease in µ even at 10% stretch. The simple blending approach imparts deformability to π‐conjugated polymer films for application in stretchable OTFTs.     

Efficient Polymer Solar Cells Based on Poly(3‐hexylthiophene):Indene‐C70 Bisadduct with a MoO3 Buffer Layer

Polymer solar cells (PSCs) with poly(3‐hexylthiophene) (P3HT) as a donor, an indene‐C₇₀ bisadduct (IC₇₀BA) as an acceptor, a layer of indium tin oxide modified by MoO₃ as a positive electrode, and Ca/Al as a negative electrode are presented. The photovoltaic performance of the PSCs was optimized by controlling spin‐coating time (solvent annealing time) and thermal annealing, and the effect of the spin‐coating times on absorption spectra, X‐ray diffraction patterns, and transmission electron microscopy images of P3HT/IC₇₀BA blend films were systematically investigated. Optimized PSCs were obtained from P3HT/IC₇₀BA (1:1, w/w), which exhibited a high power conversion efficiency of 6.68%. The excellent performance of the PSCs is attributed to the higher crystallinity of P3HT and better a donor–acceptor interpenetrating network of the active layer prepared under the optimized conditions. In addition, PSCs with a poly(3,4‐ethylenedioxy‐thiophene):poly(styrenesulfonate) (PEDOT:PSS) buffer layer under the same optimized conditions showed a PCE of 6.20%. The results indicate that the MoO₃ buffer layer in the PSCs based on P3HT/IC₇₀BA is superior to that of the PEDOT:PSS buffer layer, not only showing a higher device stability but also resulting in a better photovoltaic performance of the PSCs.     

Localized Ligand Induced Electroless Plating (LIEP) Process for the Fabrication of Copper Patterns Onto Flexible Polymer Substrates

The “ligand induced electroless plating (LIEP) process” is a simple process to obtain localized metal plating onto flexible polymers such as poly(ethylene terephtalate) and polyvinylidene fluoride sheets. This generic and cost‐effective process, efficient on any common polymer surface, is based on the covalent grafting by the GraftFast process of a thin chelating polymer film, such as poly(acrylic acid), which can complex copper ions. The entrapped copper ions are then chemically reduced in situ and the resulting Cu⁰ species act as a seed layer for the electroless copper growth which, thus, starts inside the host polymer. The present work focuses on the application of the LIEP process to the patterning of localized metallic tracks via two simple lithographic methods. The first is based on a standard photolithography process using a positive photoresist masking to prevent the covalent grafting of PAA in designated areas of the polymer substrate. In the second, the patterning is performed by direct printing of the mask with a commercial laser printer. In both cases, the mask was lifted off before the copper electroless plating step, which provides ecological benefits, since only the amount of copper necessary for the metallic patterning is used.