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81.
温度对非晶硅薄膜二次晶化的影响   总被引:4,自引:0,他引:4  
为研究温度对固相晶化的影响,用玻璃作衬底,在不同温度下用PECVD法直接沉积非晶硅(a-Si:H)薄膜,把在室温、350℃和450℃下沉积的样品,在600℃和850℃下退火3h,把前后样品用拉曼光谱和扫描电镜分析,发现二次晶化后的晶化效果比直接沉积的薄膜好,850℃下退火的薄膜比600℃好。在450℃下沉积、850℃退火3h,SEM观察,表面最大晶粒尺寸为900nm左右。  相似文献   
82.
A ZnO nanoarchitecture, i.e., ZnO nanosheet (NS) framework, is demonstrated to be a promising electron acceptor and direct electron transport matrix for polymer‐inorganic hybrid solar cells. The ZnO NS framework is constructed on nanoneedles/indium tin oxide substrate via a room‐temperature chemical bath deposition (RT CBD). The framework morphology can be simply tailored by varying the concentration of precursor solution in the RT CBD. The ZnO nanoarchitecture with an appropriate free space between the NSs is consequently demonstrated to facilitate poly(3‐hexylthiophene) (P3HT) infiltration, resulting in superior interface properties, i.e., more efficient charge separation and less charge recombination, in the hybrid. Moreover, apart from the characteristics similar to the ZnO nanorod (NR) array, including vertical feature and single crystalline structure, the ZnO NS framework exhibits a slightly larger absorption edge and a faster electron transport rate. A notable efficiency of 0.88% is therefore attained in the ZnO NS‐P3HT hybrid solar cell, which is higher than that of the ZnO NR‐P3HT hybrid solar cell.  相似文献   
83.
Tristable switching nonvolatile memory (NVM) devices based on graphene quantum dots (GQDs) sandwiched between multi-stacked poly (methyl methacrylate) (PMMA) layers were fabricated on indium-tin-oxide (ITO)-coated glass substrates by using a solution-processed method. Current-voltage (I-V) curves at 300 K for the silver nanowire/PMMA/GQD/PMMA/GQD/PMMA/ITO/glass devices showed tristable switching currents with high-resistance, intermediate-resistance, and low-resistance states. The device's cycling endurance of the three resistance states remained stable with a distinguishable value for each resistance state over 1000 cycles, and the obtained retention results showed well-distinguished resistance states without degradation for up to 1 × 104 s. Schottky emission, Poole-Frenkel emission, trapped-charge limited-current, and ohmic conduction were proposed as the dominant conduction mechanisms for the fabricated NVM devices based on the obtained I-V characteristics. The described energy-band diagrams confirm the proposed conduction band mechanisms.  相似文献   
84.
In this paper, a series of organic-inorganic hybrid materials, consisting of heterocyclic conjugated poly(3-hexylthiophene), P3HT, network, and silica particles, were successfully prepared for electrochromic studies. First, the heterocyclic co-polymer of poly[3-hexylthiophene-co-N-(3-trimethoxysilylpropyl) pyrrole], P(3HT-co-3TPP), containing trimethoxysilyl functional groups in the co-polymer backbone as the sol-gel precursor were prepared by conventional oxidative polymerization. Subsequently, P(3HT-co-3TPP)-silica hybrid sol-gel materials in the form of coatings were prepared by baking the microslides and ITO-coated electrodes that had been cast with homogeneous blending solutions containing co-polymer, acid-dopant, tetraethyl orthosilicate (TEOS), and a few drops of water. The microstructures of silica particles formed in the P(3HT-co-3TPP)-silica hybrid materials were investigated by transmission electron microscopy (TEM). The as-prepared hybrid coatings had improved adhesion capability on inorganic glass substrates relative to the pure P3HT on the basis of electrochemical cyclic voltammetric studies and Scotch tape test evaluations. During potential cycling, the film color of P(3HT-co-3TPP)-silica hybrid materials and P3HT coated on ITO electrode changed from orange yellow (i.e., reduced form) to dark blue (i.e., oxidized form) as the redox reactions proceeded. Effects of the material composition of P3HT along with hybrid materials on the electrochemistry, spectroelectrochemistry, thermal stability, and electrical conductivity were also studied.  相似文献   
85.
6,13-bis(triisopropylsilylethynyl) pentacene (TIPS pentacene) from simple drop casting typically forms crystals with random orientation and poor areal coverage, which leads to device-to-device performance variation of organic thin film transistors (OTFTs). Previously, a temperature gradient technique was developed to address these problems. However, this approach simultaneously introduced thermal cracks due to the thermally induced stress during crystallization. These thermal cracks accounted for a reduction of charge transport, thereby impacting the device performance of TIPS pentacene based OTFTs. In this work, an insulating polymer, poly(α-methyl styrene) (PαMS) was blended with TIPS pentacene to relieve the thermal stress and effectively prevent the generation of thermal cracks. The results demonstrate that the incorporation of PαMS polymer combined with the temperature gradient technique improves both the hole mobility and performance consistency of TIPS pentacene based OTFTs.  相似文献   
86.
以溶致相分离的方法制备了聚甲基丙烯酸甲酯(PMMA)基聚合物分散液晶(PDLC),并对影响其光开关效应的因素做了较为系统的研究。结果表明,液晶含量从40%增到50%使得PDLC体系的透过率从62%升高到80%,从而减弱了光开关效应。进一步增加液晶含量不提高体系的透过率,却使光开关效应愈发不明显;固化温度从室温(22℃)增大到液晶清亮点附近(55℃),则显著提高了光开关效应。  相似文献   
87.
庞少龙  马志刚  吴子贤 《电子科技》2013,26(9):106-109,112
数字下变频器是软件无线电宽带数字接收机的核心组成部分,经典的数字下变频结构难以实现高速率的混频与滤波,因此针对软件无线电系统小型化和低功耗的要求,提出一种新型的宽带数字接收机中数字下变频器的设计与FPGA实现方法,该方法采用基于多相滤波正交化处理从而实现数字接收机。文中分析了其设计原理以及FPGA实现,测试结果表明,设计具有良好的可扩展性和灵活性。  相似文献   
88.
金永龙  张宇  顾宁 《中国激光》2008,35(11):1821-1824
为了方便、快速、低成本地检测样品,提出一种内嵌光纤型微流控芯片的制备方法.利用248 nm的KrF准分子激光在聚甲基丙烯酸甲酯(PMMA)基片上进行微加工,构建芯片结构,并嵌入腐蚀过的直径35μm的单模光纤,从而形成内嵌光纤型芯片.探讨了准分子激光加工参数以及嵌入光纤的方法.结果表明,用准分子激光加工芯片,可控性好、简便可靠、加工过程可实现无人化.内嵌光纤实现了光纤的相互对准以及光纤对流道中央的对准,可以灵敏地获取样品的光学信号.  相似文献   
89.
采用旋涂和干法刻蚀技术,制作了一种新型有机集成微光机械振动传感器,其主要结构是由在硅基上制作的聚甲基丙烯酸甲酯(PMMA)悬臂梁和光波导集成光路组成,探测光路采用强度调制型开环差分探测,利用光-机转换功能,实现对微小振动量的检测。通过对该器件结构参数的优化设计和幅频特性分析表明,所制备的器件具有灵敏度高、线性度好、抗电磁干扰、工艺简单、成本低等优点。  相似文献   
90.
在酸性条件下制备可溶性聚{(3-丙酰基)吡咯-[2,5-二(对硝基苯甲烯)]}(PPPDNBE),并且对PPPDNBE的热稳定性能、光物理性能和电化学性能进行研究.热失重曲线显示,PPPDNBE的初始分解温度为187.41℃.紫外-可见吸收光谱表明,PPPDNBE溶液和薄膜的共轭吸收峰分别位于476 nm和484 nm.PPPDNBE为橙色发光材料,最大发射波长为612 nm.PPPDNBE的光学带隙和电化学带隙分别为1.68 eV和1.62 ev.此外,PPPDNBE还可以用作电容器的阴极材料,随着电压扫描速率增加,储存的电量逐渐增大.  相似文献   
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