新型接触式图像传感器信号处理技术

接触式图像传感器（ＣＩＳ）是一种新图像传感器。由于ＣＩＳ头比ＣＣＤ部件更紧张,因此可使制成的产品体积更小。本文阐述了ＣＩＳ的特点、基本结构和信号处理技术;介绍了自行研制的ＣＩＳ信号处理系统,并给出了一组信号实测波形。     

All‐Carbon Nanotube‐Based Flexible Field‐Emission Devices: From Cathode to Anode

The fabrication of a flexible field‐emission device (FED) using single‐walled carbon nanotube (SWNT) network films as the conducting electrodes (anode and cathode) and thin multi‐walled CNT/TEOS hybrid films as the emitters is reported. P‐type doping with gold ions and passivation with tetraethylorthosilicate (TEOS) made the SWNT network film highly conductive and environmentally stable, and hence a good alternative to conventional indium tin oxide electrodes. CNT/TEOS hybrid emitters showed high current density, low turn‐on field, and long‐term emission stability, compared with CNT emitters; these characteristics can be attributed to the TEOS sol, acting both as a protective layer surrounding the nanotube tip, and as an adhesive layer enhancing the nanotube adhesion to the substrate. All‐CNT‐based flexible FEDs fabricated by this approach showed high flexibility in field emission characteristics and extremely bright electron emission patterns.     

基于神经网络的非线性预测在恒温系统中的应用

针对恒温系统的非线性、大延时等特点,提出了基于RBF神经网络的恒温系统的预测模型,采用非线性预测控制、引入模型误差项和改进后的PI控制器,并且在Matlab7.2/Simulink这个平台下构建了整个系统的仿真模型。仿真结果表明：所建立的模型系统具有良好的动静态性能且增强了系统的抗干扰性。     

高精度PWM输出的温度传感器MAX6666/6667的特性及应用

介绍了MAXIM公司研制的新型高精度PWM输出温度传感器MAX6666/6667的主要性能及其典型应用电路。     

双π型RF EMIF的一种薄膜集成制造方法

基于双兀型电磁干扰滤波器(EMIF)的电路结构,借鉴了集成电路超微细加工技术,提出了与等平面超大规模集成电路工艺完全兼容的双兀型EMIF电路的薄膜集成制造方法.该方法可用于制作满足未来电子系统的高频化、小型化、轻型化和片式化信号处理EMIF电路的应用需求,改善双兀型EMIF电路的信号处理性能,还可将其与VLSI一起片上集成.     

牛奶加工过程中的清洗(二)

五．牛奶厂的清洗。目前，牛奶厂采用的清洗方式主要是CIP清洗(Cleaning in place)，原地清洗或称定置清洗，即在基本不拆卸或挪动机械装置和管线的情况下对生产过程中能与牛奶发生接触的设备表面进行的清洗。其冲刷、清洗、灭菌的整个过程全部实现了自动化因此大大降低了劳动强度。而有一些不     

衬底温度对ZnO薄膜氧缺陷的影响

采用射频磁控溅射在石英玻璃和单晶硅Si(100)衬底上制备了ZnO薄膜，研究了衬底温度对ZnO薄膜中氧缺陷的影响。实验发现，ZnO薄膜c轴取向性随温度的升高而增强；当衬底温度达到550。C时，XRD谱上仅出现一个强的(002)衍射峰和一个弱的(004)衍射峰，显示ZnO具有优异c轴取向性。同时，随着温度的升高，ZnO薄膜的紫外透射截止边带向高波长方向漂移，其电导率也随衬底温度的升高逐渐增大，表明薄膜中的氧缺陷逐渐增多。这种氧缺陷是由于ZnO的氧平衡分压高于Zn所致，可通过提高溅射气体中氧含量来改善。     

Design of Engineered Elastomeric Substrate for Stretchable Active Devices and Sensors

In the field of flexible electronics, emerging applications require biocompatible and unobtrusive devices, which can withstand different modes of mechanical deformation and achieve low complexity in the fabrication process. Here, the fabrication of a mesa‐shaped elastomeric substrate, supporting thin‐film transistors (TFTs) and logic circuits (inverters), is reported. High‐relief structures are designed to minimize the strain experienced by the electronics, which are fabricated directly on the pillars' surface. In this design configuration, devices based on amorphous indium‐gallium‐zinc‐oxide can withstand different modes of deformation. Bending, stretching, and twisting experiments up to 6 mm radius, 20% uniaxial strain, and 180° global twisting, respectively, are performed to show stable electrical performance of the TFTs. Similarly, a fully integrated digital inverter is tested while stretched up to 20% elongation. As a proof of the versatility of mesa‐shaped geometry, a biocompatible and stretchable sensor for temperature mapping is also realized. Using pectin, which is a temperature‐sensitive material present in plant cells, the response of the sensor shows current modulation from 13 to 28 °C and functionality up to 15% strain. These results demonstrate the performance of highly flexible electronics for a broad variety of applications, including smart skin and health monitoring.     

双悬梁光纤布拉格光栅低频加速度传感器

为了实现光纤布拉格光栅（FHG）加速度信号的准确测量,提出了一种新颖的双悬梁FBG加速度传感器。设计了传感器的结构及封装方法,理论分析了传感器的工作原理。实验研究了传感器的线性响应、温度响应、共振频率和方向抗干扰特性,结果表明,传感器的加速度响应灵敏度为7．81pm／m／s2,相对误差为2．62％,加速度与波长具有较好...     

Rapid thermal annealing effects on the photoluminescence properties of molecular beam epitaxy-grown GaIn(N)As quantum wells with Ga(N)As spacers and barriers

This article describes the effects of rapid thermal annealing (RTA) on the photoluminescence (PL) emission from a series of GaIn(N)As quantum wells. Indium compositions of both 20% and 32% were examined with nominal N compositions of 1% or 2%. The N location was varied within our quantum structure, which can be divided into three regions: (1) quantum well, (2) Ga(N)As spacer layers at the barrier-to-well interface and well-to-barrier interface, and (3) barriers surrounding each quantum well. Eight combinations of samples were examined with varying In content, Ga(N)As spacer layer thickness, N content, and N location in the structure. In the best cases, the presence of these Ga(N)As spacer layers improves the PL properties, due to annealing, with a reduction in the emission wavelength blueshift by ～400 Å, a reduction of the decrease in the full-width at half-maximum (FWHM) by ～5 meV, and a threefold reduction of the increase in integrated intensity. It was also observed that relocating N from the quantum wells to the barriers produces a comparable emission wavelength both before and after annealing. Our results further show that the composition of incorporated N in the material is most influential during the stages of RTA in which relatively small amounts of thermal energy is present from our lower annealing times and temperatures. Hence, we believe a low thermal-energy anneal is responsible for the recovery of the plasma-related crystal damage that was incurred during its growth. However, the In composition in the quantum well is most influential during the latter stages of thermal annealing, at increased times and temperatures, where the wavelength blueshift was roughly independent of the amount of incorporated N. As a result, our investigations into the effects of RTA on the PL properties support other reports that suggest the wavelength blueshift is not due to N diffusion.