全文获取类型
收费全文 | 16672篇 |
免费 | 2237篇 |
国内免费 | 612篇 |
专业分类
电工技术 | 433篇 |
综合类 | 1072篇 |
化学工业 | 4383篇 |
金属工艺 | 1963篇 |
机械仪表 | 406篇 |
建筑科学 | 614篇 |
矿业工程 | 1791篇 |
能源动力 | 172篇 |
轻工业 | 2181篇 |
水利工程 | 186篇 |
石油天然气 | 264篇 |
武器工业 | 94篇 |
无线电 | 894篇 |
一般工业技术 | 1526篇 |
冶金工业 | 3276篇 |
原子能技术 | 83篇 |
自动化技术 | 183篇 |
出版年
2024年 | 75篇 |
2023年 | 302篇 |
2022年 | 524篇 |
2021年 | 665篇 |
2020年 | 695篇 |
2019年 | 503篇 |
2018年 | 527篇 |
2017年 | 575篇 |
2016年 | 627篇 |
2015年 | 694篇 |
2014年 | 949篇 |
2013年 | 1043篇 |
2012年 | 1262篇 |
2011年 | 1233篇 |
2010年 | 920篇 |
2009年 | 914篇 |
2008年 | 704篇 |
2007年 | 1025篇 |
2006年 | 976篇 |
2005年 | 808篇 |
2004年 | 740篇 |
2003年 | 633篇 |
2002年 | 581篇 |
2001年 | 457篇 |
2000年 | 407篇 |
1999年 | 317篇 |
1998年 | 271篇 |
1997年 | 199篇 |
1996年 | 164篇 |
1995年 | 126篇 |
1994年 | 122篇 |
1993年 | 76篇 |
1992年 | 93篇 |
1991年 | 68篇 |
1990年 | 41篇 |
1989年 | 46篇 |
1988年 | 27篇 |
1987年 | 26篇 |
1986年 | 23篇 |
1985年 | 12篇 |
1984年 | 18篇 |
1983年 | 8篇 |
1982年 | 12篇 |
1981年 | 13篇 |
1980年 | 5篇 |
1978年 | 2篇 |
1977年 | 3篇 |
1974年 | 2篇 |
1955年 | 1篇 |
1951年 | 3篇 |
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
11.
The surface chemistry and mineral liberation changes of a porphyry copper ore after high voltage pulse (HVP) electrical comminution have been investigated using X-ray photoelectron spectroscopy (XPS) and mineral liberation analysis (MLA). Previous studies suggest that electrical comminution has the potential to improve downstream flotation recoveries, due to increased mineral liberation. However, until now the effects on the surface chemistry have not been investigated in detail.The mineral liberation results showed that chalcopyrite was more liberated in the electrical comminution product than in mechanical comminution, noticeably in the coarser size fractions. The surface chemistry of pure chalcopyrite was investigated, using XPS, and high resolution scans of iron and sulphur showed that both comminution methods led to iron oxidising preferentially leaving behind a passivating film of copper sulphides. However, the HVP product oxidisation was more severe with more iron oxide being produced and further oxidation of the remaining copper sulphides into copper sulphate. An attrition grinding stage may be useful in removing the oxidised layer from the surface of the particles prior to flotation separation. This paper presents a new application of the HVP technology in hybrid procedures using electrical comminution and mechanical grinding to prepare the flotation feed, rather than using excessive pulse energy to fully disintegrate ore to the flotation size. Better liberation and flotation performance were achieved through the hybrid procedures than the comparative mechanical comminution. 相似文献
12.
Mani Balamurugan Hui‐Yun Jeong Venkata Surya Kumar Choutipalli Jung Sug Hong Hongmin Seo Natarajan Saravanan Jun Ho Jang Kang‐Gyu Lee Yoon Ho Lee Sang Won Im Venkatesan Subramanian Sun Hee Kim Ki Tae Nam 《Small (Weinheim an der Bergstrasse, Germany)》2020,16(25)
The electrochemical reduction of carbon dioxide (CO2) to hydrocarbons is a challenging task because of the issues in controlling the efficiency and selectivity of the products. Among the various transition metals, copper has attracted attention as it yields more reduced and C2 products even while using mononuclear copper center as catalysts. In addition, it is found that reversible formation of copper nanoparticle acts as the real catalytically active site for the conversion of CO2 to reduced products. Here, it is demonstrated that the dinuclear molecular copper complex immobilized over graphitized mesoporous carbon can act as catalysts for the conversion of CO2 to hydrocarbons (methane and ethylene) up to 60%. Interestingly, high selectivity toward C2 product (40% faradaic efficiency) is achieved by a molecular complex based hybrid material from CO2 in 0.1 m KCl. In addition, the role of local pH, porous structure, and carbon support in limiting the mass transport to achieve the highly reduced products is demonstrated. Although the spectroscopic analysis of the catalysts exhibits molecular nature of the complex after 2 h bulk electrolysis, morphological study reveals that the newly generated copper cluster is the real active site during the catalytic reactions. 相似文献
13.
Xi Shen Li-Peng Cao Jian-Fa Zhao Wei-Peng Wang Qing-Qing Liu Yuan Yao Jun-Jie Li Chang-Zhi Gu Ming-Wei Chen Chang-Qing Jin Ri-Cheng Yu 《Journal of the American Ceramic Society》2019,102(11):6469-6474
We propose the question of the modulated structures of copper oxide is caused by the [CuO2] in-plane oxygen vacancy or apical oxygen vacancy. Sr2CuO3+δ single-crystal samples were prepared using high-temperature and high-pressure methods. The major phase of Sr2CuO3+δ (δ = 0.4) single-crystal system is found to be constituted by the 5 a modulated structure with the Fmmm space group, which originates from the [CuO2] in-plane oxygen vacancy appearing in octahedral Cu-O. Besides, the presence of the [CuO2] in-plane oxygen vacancy may obliterate the superconductivity of the system. Experimental results deduce that the oxygen vacancy may appear in the apical oxygen sites in high-temperature copper oxide superconductors. 相似文献
14.
15.
16.
17.
针对甲醇液相氧化羰基化法合成碳酸二甲酯(DMC)工艺,开发了新型Cu基络合催化剂(CuB rnLm)。对CuB rnLm催化剂的活性及其稳定性进行了研究。实验结果表明,采用该催化剂,甲醇转化率和DMC选择性较高;元素价态和物质结构分析表明,CuB rnLm催化剂循环使用5次后仍保持较好的稳定性。采用正交设计和中心响应曲面法设计实验,并使用S tatistica软件进行统计分析,寻求出反应的主要影响因素,并得到优化的工艺条件:反应温度100~110℃、反应压力3.0~3.5M Pa、反应时间4~6h、CuB rnLm催化剂质量浓度(以甲醇的体积计)0.15~0.20g/mL。在此工艺条件下,甲醇转化率可达23%以上,DMC的选择性为96%~98%。 相似文献
18.
本文简要叙述利用流变仪对覆铜箔层压板生产工序中的胶液和半固化片参数进行控制,从而更好地保证胶液和 半固化片性状的一致性,以有利于控制板材流胶和品质。 相似文献
19.
Cu-Mg/Al_2O_3催化乙醇和乙二胺合成N-乙基乙二胺 总被引:1,自引:0,他引:1
在固定床反应器内,乙醇和乙二胺经分子间催化胺化反应合成了N-乙基乙二胺(NEED),考察了一系列铜系催化剂的活性,并筛选出催化性能较好的Cu-Mg/A l2O3催化剂;通过X射线衍射和透射扫描电子显微镜方法表征了助剂Mg对Cu/A l2O3催化剂的改性作用;考察了助催化剂Mg含量、反应温度、反应压力、进料量和乙二胺含量等对Cu-Mg/A l2O3催化剂性能的影响。实验结果表明,Cu-Mg/A l2O3催化剂具有很好的活性和选择性;在200℃、3.0MPa、质量分数20%的乙二胺乙醇溶液、进料量1.0mL/m in的条件下,乙二胺的转化率为71.56%,产物NEED的选择性和收率分别为92.62%和69.86%;经过20 d的连续使用表明,Cu-Mg/A l2O3催化剂具有良好的稳定性。 相似文献
20.
The feature scale planarization of the copper chemical mechanical planarization (CMP) process has been characterized for two
copper processes using Hitachi 430-TU/Hitachi T605 and Cabot 5001/Arch Cu10K consumables. The first process is an example
of an abrasive-free polish with a high-selectivity barrier slurry, while the second is an example of a conventional abrasive
slurry with a low-selectivity barrier slurry. Copper fill planarization has been characterized for structures with conformal
deposition as well as with bumps resulting from bottom-up fill. Dishing and erosion were characterized for several structures
after clearing. The abrasive-free polish resulted in low sensitivity to overpolish and low saturation levels for dishing and
erosion. Consequently, this demonstrated superior performance when compared to the International Technology Roadmap for Semiconductors
(ITRS) 2000 roadmap targets for planarization. While the conventional slurry could achieve the 0.13-μm technology node requirements,
the abrasive-free polish met the planarization requirements beyond the 0.10-μm technology node. 相似文献