CMOS电路中抗Latch-up的保护环结构研究

闩锁是CMOS集成电路中的一种寄生效应,这种PNPN结构一旦被触发,从电源到地会产生大电流,导致整个芯片的失效。针对芯片在实际测试中发现的闩锁问题,介绍了闩锁的测试方法,并且利用软件Tsuprem4和Medici模拟整个失效过程,在对2类保护环(多子环/少子环)作用的分析,以及各种保护结构的模拟基础之上,通过对比触发电压和电流,得到一种最优的抗Latch up版图设计方法,通过进一步的流片、测试,解决了芯片中的闩锁失效问题,验证了这种结构的有效性。     

小高层剪力墙结构开洞设计探讨

小高层建筑需通过剪力墙开洞(结构开洞)降低侧向刚度,本文对开洞部位以及墙肢和连梁设计提出一些看法,供设计人员参考。     

在ad hoc网络中一种新的节能路由切换模型

提出了一种基于能量消耗的路由切换模型(ERHM),它在路由维护中利用切换技术来使路由的能量消耗最小.仿真结果表明采用切换技术的ERHM模型的能量节省量要比不采用切换技术节约1.5～7.5倍,且节点的移动性越大,能量节约越多.     

贯流式水轮发电机集电环短路原因分析及改善措施

白石窑水电厂1～4号发电机组在投运初期,集电环曾多次出现绝缘降低甚至短路的非正常现象。通过分析,引发故障的原因主要是碳刷架、集电环绝缘结构设计欠妥、运行环境恶劣以及机组的振动过大。针对上述原因,改进了绝缘结构设计上的不足,加强巡视和维护检查,装设工业电视监控,加装碳粉回收装置,对受油器进行防漏油或喷油技术处理,加强清污力度、提高发电水头以便减少机组振动,从内外因加以防范和改善后,问题得到了标本兼治,取得了理想的效果。     

Dynamic stiffness vibration analysis using a high‐order beam model

This work presents the derivation of the exact dynamic stiffness matrix for a high‐order beam element. The terms are found directly from the solutions of the differential equations that describe the deformations of the cross‐section according to the high‐order theory, which include cubic variation of the axial displacements over the cross‐section of the beam. The model has six degrees of freedom at the two ends, one transverse displacement and two rotations, and the end forces are a shear force and two end moments. Using the dynamic stiffness matrix exact vibration frequencies for beams with various combinations of boundary conditions are tabulated and compared with results from the Bernoulli–Euler and Timoshenko beam models. Copyright © 2003 John Wiley & Sons, Ltd.     

正交参数与平纹面

本文证明了一族闭曲线C(t),t∈I,称变闭曲线,在光滑性条件下,具有正交参数u,即当C(t)表为(?)=(?)(u,t)时,有(?)·(?)≡0.接着,文中提出了一种“降维法”,即用一族平行平面将空间曲面截成平面变曲线,并讨论其若干整体性质.     

鱼类耳石扫描电镜样品制备与观察

本文介绍了一种鱼类耳石样品的扫描电镜制样方法，通过对草鱼耳石进行包埋，抛磨，并用合适的腐蚀剂处理，用ＳＥＭ成功地观察了耳石的日轮及超微结构，该方法简便易行，保证所观察耳石样品的微观结构完整与清晰。     

分析恒载效应的有限元方法

本文在Takabatake关于恒载对梁静、动力影响的研究工作的基础上,导出了梁考虑恒载效应的动力分析有限元公式,提出了荷载影响刚度矩阵的概念。分析了分布和集中两种恒载型式对简支梁和悬臂梁自振特性的影响。计算结果表明,用本文方法与Takabatake应用Galerkin方法和近似闭合解方法的结果吻合良好。同时由于本文采用了矩阵形式,不仅便于编制计算机程序,且使方法有更广泛的适用性和灵活性,可更方便地用于各种不同的构造和边界条件下的实际结构。     

Photo-reversible Reaction in Polymer Langmuir-Blodgett Films

Preparation of photoreactive Langmuir-Blodgett (LB) films was carried out using polymers/oligomers prepared from long-chain dialkyl esters of di-and tetra-olefins and having cyclobutane rings in the main chain. These polymers/oligomers formed stable monolayers on a water surface when mixed with arachidic acid. These monolayers could be deposited onto a substrate successfully forming Y-type films. The oligomer LB films were polymerized on irradiation. The polymer LB films showed a photo-reversible process between polymers and oligomers, depending on wavelength of the irradiating light. On the basis of spectral data and molecular weight change, this behaviour was found to be caused by cleavage and formation of cyclobutane rings.     

A new approach to the mechanism of chlorine evolution: Separate examination of the kinetic steps using ac impedance on a rotating thin ring electrode

In the absence of a bulk diffusion effect, it is shown for the first time that the impedance spectra for the chlorine evolution reaction on a rotating thin ring electrode comprise three consecutive semicircles in the capacitive half of the complex plane. The first (highest frequency) semicircle is due to the charge-transfer resistance for chloride discharge and the simultaneous chlorine adsorption coupled to the double-layer capacitance. The second semicircle (around 5 Hz) is due to the adsorption and desorption of a chlorine intermediate. The third (lowest frequency, around 0.5 Hz) semicircle is due to the relaxation of surface oxygen species. The impedance data allow the steps of the overall reaction to be examined individually. On a Pt surface the rate of chloride discharge and simultaneous chlorine adsorption (the admittance of the first semicircle) is first order with respect to chloride concentration and has a potential-dependence close to 58 mV/decade. The rate of the adsorption and desorption process (the admittance of the second semicircle) is second order with respect to chloride concentration, and has a potential dependence close to 30 mV/decade. The time constant for the adsorption/desorption processes is ca 20 ms, independent of electrode potential in the range studied. These features are consistent with a mechanism in which a faster discharge reaction (Cl⁻ Cl_ad + e) is followed by a slower surface combination reaction (2Cl_ad → Cl₂), but inconsistent with mechanisms in which ion + atom desorption is predominant, the initial chloride discharge is slow, or a unipositively charged chlorine species is involved.