Synthesis of ZnO nanowalls on Al2O3 (0001) by catalyst-free metalorganic chemical vapor deposition

We report the synthesis of epitaxially aligned ZnO nanowalls on Al₂O₃ (0001) by metalorganic chemical vapor deposition without using any metal catalyst. ZnO nanowalls of 60–150 nm thickness are uniformly assembled on the substrate. A small amount of ZnO nanowires additionally grow and are coupled with the ZnO nanowalls. Interestingly, the crystals in the ZnO nanowalls are aligned in both the out-of-and in-plane direction. A strong UV emission at around 380 nm, observed in a room temperature photoluminescence spectrum, indicates excellent optical quality of the ZnO nanowalls.     

高温PTC陶瓷研究进展

概述了高温ＰＴＣ陶瓷近几年来的研究进展，着重介绍了（Ｂａ、Ｐｂ）ＴｉＯ３高温ＰＴＣ陶瓷体系中Ｐｂ对居里点移动的影响，以及掺杂种类和陶瓷制备工艺等方面的研究进展，简要论述了ＰＴＣＲ的唯象分析理论，展望了高温ＰＴＣ陶瓷的研究前景。     

Preparation and Photoelectric Conversion Mechanism of Semiconducting ITO/Cu2O Electrodes

Semiconducting cuprous oxide films were electrodeposited onto conducting glasses coated with Indium Tin Oxide (ITO) using potentiostatic method. The electrodes were examined by means of X-Ray Diffraction (XRD) and X-ray Photoelectron Spectrum (XPS). The results indicate that the prepared films are cubic Cu2O crystals, and annealing enhances the size and preferred orientation of the films. The photoelectric conversion mechanism of semiconducting ITO/Cu2O electrodes in 0.1 mol/L potassium sulfate (K2SO4) solution is further discussed by using Linear Sweep Voltammetry (LSV) method. The differences of photoelectric conversion of electrodes are reasonably deduced and proved through surfactant modifying, annealing or not, respectively.     

Cd1–xMnxS Diluted Magnetic Semiconductors as Nanostructured Guest Species in Mesoporous Thin‐Film Silica Host Media

Recently, we demonstrated the possibility of synthesizing ordered nanowires of diluted magnetic II/VI semiconductors inside the channels of mesoporous silica host structures. Here, we expand this procedure from mesoporous powders to mesoporous thin films. Diluted magnetic semiconductors Cd_1–xMn_xS were synthesized within the pores of mesoporous thin‐film silica host structures by a wet‐impregnation technique using an aqueous solution of the respective metal acetates, followed by drying steps and a conversion to sulfide by thermal H₂S treatment. The presence of Cd_1–xMn_xS nanoparticles inside the pores was proved by powder X‐ray diffraction, infrared and Raman spectroscopy, and transmission electron microscopy. Photoluminescence excitation measurements clearly demonstrate the quantum size effect of the incorporated nanostructured guest species. The quality of the nanoparticles incorporated into the mesoporous films is comparable to that of those inside the mesoporous powders.     

电子束蒸发方法研究Mg2Si的薄膜及其光学带隙

Mg_2Si材料作为一种新型环境友好半导体材料,其薄膜制备方法及其光学性质的研究对其应用研发起到基础性作用.采用电子束蒸发方法在Si(111)衬底上沉积Mg膜,在氩气环境下进行热处理以制备Mg_2Si半导体薄膜.采用X射线衍射仪(XRD)、扫描电镜(SEM)、分光光度计对制备的Mg_2Si薄膜进行表征.在氩气环境、温度500℃、压强200 Pa下,研究热处理时间(时间3-7 h)对Mg_2Si薄膜形成的影响.XRD和SEM结果表明:通过电子束蒸发沉积方法在500℃、热处理时间为3~7 h能够得到Mg_2Si薄膜.热处理温度是500时,最佳热处理时间是4 h,得到致密度好的薄膜.通过对薄膜的红外透射谱测试,得到了Mg_2Si薄膜的光学带隙,其间接光学带隙值为0.9433 eV,直接光学带隙值为1.1580 eV.实验数据为Mg_2Si薄膜的研发在制备工艺和光学性质方面提供参考.     

Biocompatible D–A Semiconducting Polymer Nanoparticle with Light‐Harvesting Unit for Highly Effective Photoacoustic Imaging Guided Photothermal Therapy

The development of nanotheranostic agents that integrate diagnosis and therapy for effective personalized precision medicine has obtained tremendous attention in the past few decades. In this report, biocompatible electron donor–acceptor conjugated semiconducting polymer nanoparticles (PPor‐PEG NPs) with light‐harvesting unit is prepared and developed for highly effective photoacoustic imaging guided photothermal therapy. To the best of our knowledge, it is the first time that the concept of light‐harvesting unit is exploited for enhancing the photoacoustic signal and photothermal energy conversion in polymer‐based theranostic agent. Combined with additional merits including donor–acceptor pair to favor electron transfer and fluorescence quenching effect after NP formation, the photothermal conversion efficiency of the PPor‐PEG NPs is determined to be 62.3%, which is the highest value among reported polymer NPs. Moreover, the as‐prepared PPor‐PEG NP not only exhibits a remarkable cell‐killing ability but also achieves 100% tumor elimination, demonstrating its excellent photothermal therapeutic efficacy. Finally, the as‐prepared water‐dispersible PPor‐PEG NPs show good biocompatibility and biosafety, making them a promising candidate for future clinical applications in cancer theranostics.     

Development of a shear‐force scanning near‐field cathodoluminescence microscope for characterization of nanostructures’ optical properties

An original scanning near‐field cathodoluminescence microscope for nanostructure characterization has been developed and successfully tested. By using a bimorph piezoelectric stack both as actuator and detector, the developed setup constitutes a real improvement compared to previously reported SEM‐based solutions. The technique combines a scanning probe and a scanning electron microscope in order to simultaneously offer near‐field cathodoluminescence and topographic images of the sample. Share‐force topography and cathodoluminescence measurements on GaN, SiC and ZnO nanostructures using the developed setup are presented showing a nanometric resolution in both topography and cathodoluminescence images with increased sensitivity compared to classical luminescence techniques.     

Effects of Pre-annealing on Firing Stability of Atomic Layer-Deposited Al2O3

Al₂O₃ layers fabricated with atomic layer deposition (ALD) show high levels of surface passivation on p- and n-type silicon wafers. In order to form front and rear electrodes, Al₂O₃ layers should undergo a firing process at a high peak temperature. Therefore, the Al₂O₃ layer must be stable under these conditions to maintain a high level of surface passivation during the firing process. In this study, Al₂O₃ layers fabricated with ALD were pre-annealed to enhance their thermal stability during the firing process. From quasi-steady state photoconductance (QSSPC) measurements, the difference between the implied V_oc values of the pre-annealed and fired samples was found to be smallest (3 mV) when the sample was pre-annealed at 620 °C. The surface recombination rate calculated from capacitance-voltage (C-V) measurements of metal-Al₂O₃-Si (metal-insulator-semiconductor) structures was shown to be low when the sample was pre-annealed at 600–650 °C. Thus, firing stability was achieved with pre-annealing at 620 °C by reducing the surface recombination rate. We conclude that it is necessary to pre-anneal the Al₂O₃ passivation layer at this specific temperature to reduce the degradation of the passivation quality of Al₂O₃ after the firing process.     

Photoluminescence properties of ZnSe_(1-x)Te_x thin films on GaAs/ITO substrates by electron beam evaporation technique

Zinc chalcogenide which includes zinc selenide,zinc sulphide,zinc telluride and mixed crystals of these shows a great potential as an optoelectronic device material. Zinc selenotelluride is a suitable material for visible light emitting devices which are expected to cover the spectral range from yellow to blue. In our present study the composition controlled ZnSe1-xTex films with different Te content x = 0,0.2,0.4,0.6,0.8 and 1.0 were deposited by electron beam (EB) evaporation technique. GaAs films were de...