Photo‐/Thermal‐Responsive Field‐Effect Transistor upon Blending Polymeric Semiconductor with Hexaarylbiimidazole toward Photonically Programmable and Thermally Erasable Memory Device

It is shown that the semiconducting performance of field‐effect transistors (FETs) with PDPP4T (poly(diketopyrrolopyrrole‐quaterthiophene)) can be reversibly tuned by UV light irradiation and thermal heating after blending with the photochromic hexaarylbiimidazole compound (p‐NO₂‐HABI). A photo‐/thermal‐responsive FET with a blend thin film of PDPP4T and p‐NO₂‐HABI is successfully fabricated. The transfer characteristics are altered significantly with current enhanced up to 10⁶‐fold at V_G = 0 V after UV light irradiation. However, further heating results in the recovery of the transfer curve. This approach can be extended to other semiconducting polymers such as P3HT (poly(3‐hexyl thiophene)), PBTTT (poly(2,5‐bis(3‐tetradecylthiophen‐2‐yl)thieno[3,2‐b] thiophene)) and PDPPDTT (poly(diketopyrrolopyrrole‐dithienothiophene)). It is hypothesized that TPIRs (2,4,5‐triphenylimidazolyl radicals) formed from p‐NO₂‐HABI after UV light irradiation can interact with charge defects at the gate dielectric–semiconductor interface and those in the semiconducting layer to induce more hole carriers in the semiconducting channel. The application of the blend thin film of PDPP4T and p‐NO₂‐HABI is further demonstrated to fabricate the photonically programmable and thermally erasable FET‐based nonvolatile memory devices that are advantageous in terms of i) high ON/OFF current ratio, ii) nondestructive reading at low electrical bias, and iii) reasonably highly stable ON‐state and OFF‐state.     

Taming Charge Transport in Semiconducting Polymers with Branched Alkyl Side Chains

The solid‐state packing and polymer orientation relative to the substrate are key properties to control in order to achieve high charge carrier mobilities in organic field effect transistors (OFET). Intuitively, shorter side chains are expected to yield higher charge carrier mobilities because of a denser solid state packing motif and a higher ratio of charge transport moieties. However our findings suggest that the polymer chain orientation plays a crucial role in high‐performing diketopyrrolopyrrole‐based polymers. By synthesizing a series of DPP‐based polymers with different branched alkyl side chain lengths, it is shown that the polymer orientation depends on the branched alkyl chain lengths and that the highest carrier mobilities are obtained only if the polymer adopts a mixed face‐on/edge‐on orientation, which allows the formation of 3D carrier channels in an otherwise edge‐on‐oriented polymer chain network. Time‐of‐flight measurements performed on the various polymer films support this hypothesis by showing higher out‐of‐plane carrier mobilities for the partially face‐on‐oriented polymers. Additionally, a favorable morphology is mimicked by blending a face‐on polymer into an exclusively edge‐on oriented polymer, resulting in higher charge carrier mobilities and opening up a new avenue for the fabrication of high performing OFET devices.     

Systematic Study of Widely Applicable N‐Doping Strategy for High‐Performance Solution‐Processed Field‐Effect Transistors

A specific design for solution‐processed doping of active semiconducting materials would be a powerful strategy in order to improve device performance in flexible and/or printed electronics. Tetrabutylammonium fluoride and tetrabutylammonium hydroxide contain Lewis base anions, F^? and OH^?, respectively, which are considered as organic dopants for efficient and cost‐effective n‐doping processes both in n‐type organic and nanocarbon‐based semiconductors, such as poly[[N,N′‐bis(2‐octyldodecyl)‐naphthalene‐1,4,5,8‐bis(dicarboximide)‐2,6‐diyl]‐alt‐5,5′‐(2,2′‐bithiophene)] (P(NDI2OD‐T2)) and selectively dispersed semiconducting single‐walled carbon nanotubes by π‐conjugated polymers. The dramatic enhancement of electron transport properties in field‐effect transistors is confirmed by the effective electron transfer from the dopants to the semiconductors as well as controllable onset and threshold voltages, convertible charge‐transport polarity, and simultaneously showing excellent device stabilities under ambient air and bias stress conditions. This simple solution‐processed chemical doping approach could facilitate the understanding of both intrinsic and extrinsic charge transport characteristics in organic semiconductors and nanocarbon‐based materials, and is thus widely applicable for developing high‐performance organic and printed electronics and optoelectronics devices.     

Applications of Secondary Electron Composition Contrast Imaging Method in Microstructure Studies on Heterojunction Semiconductor Devices and Multilayer Materials

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XLPE电缆绕组外半导电层的暂态电压分布测量

通过对无金属外屏蔽及护套的XLPE电缆绕组芯线加冲击电压测取外半导电层上电压分布的方法,得出了在冲击电压作用下,无论绕组开路或短路,绕组前部的外半导电层是最薄弱部位的结论。为新型电力设备的设计、保护及试验技术提供了依据。     

半导体陶瓷型薄膜气敏传感器的研究进展

半导体陶瓷型薄膜气敏传感器,具有灵敏度高、与气体反应快、制备成本较低等优点,已经成为近年传感器研究和开发的重点．是未来气敏传感器的发展方向之一。本文介绍了陶瓷型半导体薄膜气敏传感器常见的器件结构、薄膜材料的主要制备方法．部分主要的半导体金属氧化物薄膜气敏材料．以及近期相关的研究进展,并扼要分析了今后的发展方向。