高振实密度超细银粉的研制

采用液相化学还原法,通过正交试验优化得到高振实密度超细银粉的制备工艺;制备的超细银粉为球形、表面光洁、无团聚,d90、d50、d10与平均粒径d分别为1.85、0.79、0.34、1.11μm,振实密度高达4.5g/cm3。试验结果表明,在银粉的还原生成反应中,溶剂去离子水用量与分散剂用量是其中两个主要的影响振实密度的因素。     

银汞合金电极的制备及苯加氢性能的研究

利用浸渍还原法在Nafion117离子交换膜上制备银汞合金Nafion膜电极,考察了制备电极的主要因素,通过研究得到了浸渍还原法制备银汞合金Nafion膜电极的优化条件为:氯化汞浓度0.005mol/L,用浓度为0.1mol/LNa2S2O3络合,80℃下浸渍40min,用浓度1%(wt)的SnCl2做还原剂,还原时间2h,所制备的电极电阻较小,银汞结合比较致密,主要分布在膜的内表面.将制备的电极进行电化学性能评价,研究表明银汞比为1:1的电极对苯加氢的催化活性最高,同时生成环己烷的电流效率较高为39.68%,电极具有较好的活性及选择性.     

树脂悬浮光度法测定微量银

在ｐＨ６．９的缓冲溶液中，银与硫代米Ｃｈｉ酮（ＴＭＫ）形成的螯合物在树脂甘油相中悬浮富集，用光度法测定银在波长４６１ｎｍ处有最大吸收，银在０～６μｇ／１０ｍＬ范围内遵守比尔定律，可用于样品中微量银的测定。     

SFT型半硬同轴电缆中内导体的选用

SFT型半硬同轴电缆要求其内导体具有较高的强度和较低的导体损耗。从材料、物理状态、尺寸等方面详细阐述了内导体的选择过程。指出了尺寸一致性较好的银层厚度为3um的30％IACS软态镀银铜包钢线作为SFT型半硬同轴电缆的内导体较为合适。     

Solution‐Processable,High‐Performance Flexible Electroluminescent Devices Based on High‐k Nanodielectrics

Flexible alternating‐current electroluminescent (ACEL) devices have attracted considerable attention for their ability to produce uniform light emission under bent conditions and have enormous potential for applications in back lighting panels, decorative lighting in automobiles, and panel displays. Nevertheless, flexible ACEL devices generally require a high operating bias, which precludes their implementation in low power devices. Herein, solution‐processed La‐doped barium titanate (BTO:La) nanocuboids (≈150 nm) are presented as high dielectric constant (high‐k) nanodielectrics, which can enhance the dielectric constant of an ACEL device from 2.6 to 21 (at 1 kHz), enabling the fabrication of high‐performance flexible ACEL devices with a lower operating voltage as well as higher brightness (≈57.54 cd m^?2 at 240 V, 1 kHz) than devices using undoped BTO nanodielectrics (≈14.3 cd m^?2 at 240 V, 1 kHz). Furthermore, a uniform brightness across the whole panel surface of the flexible ACEL devices and excellent device reliability are achieved via the use of uniform networks of crossaligned silver nanowires as highly conductive and flexible electrodes. The results offer experimental validation of high‐brightness flexible ACELs using solution‐processed BTO:La nanodielectrics, which constitutes an important milestone toward the implementation of high‐k nanodielectrics in flexible displays.     

聚酰亚胺/银红外空芯波导的研制

设计并制备了一种新型的聚酰亚胺／银空芯波导，其实验工作的重点是聚酰亚胺薄膜的制备。采用改进的液相工艺，我们在石英毛细管内制备了表面光滑均一的银膜，然后，再将折射率非常接近理论最佳值（ ）的聚酞亚胺膜涂覆在银管内。通过控制聚酰亚胺膜的厚度，可以对银空芯波导在特定的波长处有降低损耗的作用。除了 ６～９μｍ处的基团吸收外，这种空芯波导在整个中红外区域的损耗都很小。在 １０．６μｍ波长处的损耗为０．４ ｄＢ／ｍ，传输能量为 １０ Ｗ时，可以稳定传输 ２０ ｍｉｎ以上，基本上可以满足 ＣＯ２激光在医疗中的应用。     

Revealing Nanomechanical Domains and Their Transient Behavior in Mixed-Halide Perovskite Films

Halide perovskites are a versatile class of semiconductors employed for high performance emerging optoelectronic devices, including flexoelectric systems, yet the influence of their ionic nature on their mechanical behavior is still to be understood. Here, a combination of atomic-force, optical, and compositional X-ray microscopy techniques is employed to shed light on the mechanical properties of halide perovskite films at the nanoscale. Mechanical domains within and between morphological grains, enclosed by mechanical boundaries of higher Young's Modulus (YM) than the bulk parent material, are revealed. These mechanical boundaries are associated with the presence of bromide-rich clusters as visualized by nano-X-ray fluorescence mapping. Stiffer regions are specifically selectively modified upon light soaking the sample, resulting in an overall homogenization of the mechanical properties toward the bulk YM. This behavior is attributed to light-induced ion migration processes that homogenize the local chemical distribution, which is accompanied by photobrightening of the photoluminescence within the same region. This work highlights critical links between mechanical, chemical, and optoelectronic characteristics in this family of perovskites, and demonstrates the potential of combinational imaging studies to understand and design halide perovskite films for emerging applications such as photoflexoelectricity.     

Maskless Preparation of Spatially-Resolved Plasmonic Nanoparticles on Polydimethylsiloxane via In Situ Fluoride-Assisted Synthesis

Here, a fluoride-assisted route for the controlled in-situ synthesis of metal nanoparticles (NPs) (i.e., AgNPs, AuNPs) on polydimethylsiloxane (PDMS) is reported. The size and coverage of the NPs on the PDMS surface are modulated with time and over space during the synthetic process, leveraging the improved yield (10×) and faster kinetics (100×) of NP formation in the presence of F⁻ ions, compared to fluoride-free approaches. This enables the maskless preparation of both linear and step gradients and patterns of NPs in 1D and 2D on the PDMS surface. As an application in flexible plasmonics/photonics, continuous and step-wise spatial modulations of the plasmonic features of PDMS slabs with 1D and 2D AgNP gradients on the surface are demonstrated. An excellent spatially resolved tuning of key optical parameters, namely, optical density from zero to 5 and extinction ratio up to 100 dB, is achieved with AgNP gradients prepared in AgF solution for 12 minutes; the performance are comparable to those of commercial dielectric/interference filters. When used as a rejection filter in optical fluorescence microscopy, the AgNP-PDMS slabs are able to reject the excitation laser at 405 nm and retain the green fluorescence of microbeads (100 µm) used as test cases.     

Composition-Dependent Photoluminescence Properties and Anti-Counterfeiting Applications of A2AgX3 (A = Rb,Cs; X = Cl,Br, I)

Copper(I) halides are emerging as attractive alternatives to lead halide perovskites for optical and electronic applications. However, blue-emitting all-inorganic copper(I) halides suffer from poor stability and lack of tunability of their photoluminescence (PL) properties. Here, the preparation of silver(I) halides A₂AgX₃ (A = Rb, Cs; X = Cl, Br, I) through solid-state synthesis is reported. In contrast to the Cu(I) analogs, A₂AgX₃ are broad-band emitters sensitive to A and X site substitutions. First-principle calculations show that defect-bound excitons are responsible for the observed main PL peaks in Rb₂AgX₃ and that self-trapped excitons (STEs) contribute to a minor PL peak in Rb₂AgBr₃. This is in sharp contrast to Rb₂CuX₃, in which the PL is dominated by the emission by STEs. Moreover, the replacement of Cu(I) with Ag(I) in A₂AgX₃ significantly improves photostability and stability in the air under ambient conditions, which enables their consideration for practical applications. Thus, luminescent inks based on A₂AgX₃ are prepared and successfully used in anti-counterfeiting applications. The excellent light emission properties, significantly improved stability, simple preparation method, and tunable light emission properties demonstrated by A₂AgX₃ suggest that silver(I) halides may be attractive alternatives to toxic lead halide perovskites and unstable copper(I) halides for optical applications.     

Engineering the Exciton Dissociation in Quantum‐Confined 2D CsPbBr3 Nanosheet Films

Recent years have witnessed a rapid development of all‐inorganic halide perovskite in optoelectronic devices. Ultrathin 2D CsPbBr₃ nanosheets (NSs) with large lateral dimensions have demonstrated exceptional photophysical properties because of their analogous exciton electronic structure to quantum wells. Despite the incredible progress on device performance, the photophysics and carrier transportation parameters of quantum‐confined CsPbBr₃ NSs are lacking, and the fundamental understanding of the exciton dissociation mechanism is far less developed. Here, a ligands rearrangement mechanism is proposed to explain why annealed NS films have an increased charge transfer rate and a decreased exciton binding energy and lifetime, prompting tunneling as a dominant way of exciton dissociation to separate photogenerated excitons between neighboring NSs. This facile but efficient method provides a new insight to manipulate perovskite nanocrystals coupling. Moreover, ultrathin 2D CsPbBr₃ NS film is demonstrated to have a enhanced absorption cross section and high carrier mobility of 77.9 cm² V^?1 s^?1, contributing to its high responsivity of 0.53 A W^?1. The photodetector has a long‐term stability up to three months, which are responsible for reliable perovskite‐based device performance.