基于模糊控制的傅立叶变换红外光谱仪定镜动态校正研究

通过分析圆形通光孔径下动镜倾斜角度对干涉调制度和相位误差的影响,设计了定镜动态校正方案。传统的比例-积分-微分（PID）控制器严格依赖于动态校正系统的数学模型,在实际的闭环系统中无法精确获取模型所有参数。系统采用了模糊PID控制策略,选择模糊输入输出论域的隶属度函数,制定模糊规则库,再经过模糊推理、清晰化处理,给出了闭环控制系统实现方法。通过实验,验证了此种校正方法的可行性,有效的摆脱了对校正系统准确的数学模型的依赖,能够将激光干涉调制度从0.6提升到0.99,相位差降低到0.1°左右,且相对于传统PID控制,稳定性能较好、调整时间较短。     

GCRP: Grid-cycle routing protocol for wireless sensor network with mobile sink

Energy conservation is a critical issue in resource constraint wireless sensor networks. Employing mobile sink to deliver the sensed data becomes pervasive approach to conserve sensors’ limited energy. However, mobile sink makes data delivery a hard nut to crack since nodes need to know its latest location. Providing sink’s latest location by traditional flooding, erode the energy conservation goal. In this paper, we propose a Grid-Cycle Routing Protocol (GCRP) with the aim of minimizing the overhead of updating the mobile sink’s latest location. In GCRP, sensor field is partitioned into grid of cells and for each cell a grid cell head (GCH) is elected. Cycles of four GCHs is formed. Cycle(s) involving border GCHs is called exterior cycle and said to belong to a region. Another cycle involving non-boundary GCHs is called interior cycle, connecting GCHs of different regions. When sink stays at one location, it updates the nearest GCH, which in turn updates the other GCHs through exterior and interior cycle. Moreover, we propose a set of sharing rules that govern GCHs when and with who share sink’s latest location information. The performance of GCRP is evaluated at different number of nodes and compared with existing work using NS-2.31.     

利用CMOS技术实现pH-ISFET传感器集成化的设计

在对离子敏场效应晶体管(ISFET)基本结构及电学特性分析的基础上,提出了一种基于CMOS技术实现ISFET与信号处理电路集成化的设计方法.模拟仿真的结果表明,所采用的ISFET/MOSFET"互补对"结构的信号读取电路形式能够抑制"温漂"和克服"硅衬底体效应"对器件测量灵敏度的影响,是一种适用于ISFET集成设计的信号读取方式.     

基于修正SSIM的SAR干扰效果评估方法

该文提出了一种基于修正结构相似度的合成孔径雷达干扰效果评估方法。该方法不仅巧妙地利用了结构相似度作为主客观评价的连接纽带,而且结合梯度模与人眼视觉系统多通道特性相匹配的特点,通过非线性处理得到了修正的评估指标GSSIM。仿真结果表明,GSSIM较均方误差、峰值信噪比及相关系数等传统评估指标具有明显的优势,不仅能够更好地反映出干扰对图像ROI的影响,而且能够与人类视觉系统保持高度一致,进一步提升了整套评估系统的效率和准确率。     

Physics of Gate Modulated Resonant Tunneling (RT)-FETs: Multi-barrier MOSFET for steep slope and high on-current

A new concept of nanoscale MOSFET, the Gate Modulated Resonant Tunneling Transistor (RT-FET), is presented and modeled using 3D Non-Equilibrium Green’s Function simulations enlightening the main physical mechanisms. Owing to the additional tunnel barriers and the related longitudinal confinement present in the device, the density of state is reduced in its off-state, while remaining comparable in its on-state, to that of a MOS transistor without barriers. The RT-FET thus features both a lower RT-limited off-current and a faster increase of the current with V_G, i.e. an improved slope characteristic, and hence an improved I_on/I_off ratio. Such improvement of the slope can happen in subthreshold regime, and therefore lead to subthreshold slope below the kT/q limit. In addition, faster increase of current and improved slope occur above threshold and lead to high thermionic on-current and significant I_on/I_off ratio improvement, even with threshold voltage below 0.2 V and supply voltage V_dd of a few hundreds of mV as critically needed for future technology nodes. Finally RT-FETs are intrinsically immune to source-drain tunneling and are therefore promising candidate for extending the roadmap below 10 nm.     

Ga掺杂ZnO薄膜的MOCVD生长及其特性

利用低压MOCVD技术在(0002)蓝宝石上外延获得高质量的ZnO∶Ga单晶薄膜,并研究了Ga的不同掺杂浓度对材料电学和光学特性的影响．当Ga/Zn气相摩尔比为3.2 at%时,ZnO(0002)峰半高宽仅为0.26°,载流子浓度高达2.47e19cm－3,透射率高于90%;当载流子浓度升高时,吸收边出现明显的Burstein-Moss蓝移效应．同时室温光致发光谱显示,紫外峰位随载流子浓度的增加而发生红移,峰形展宽,这和Ga高掺杂所引起的能带重整化效应有关．当Ga/Zn比达到6.3 at%时,由于高掺杂浓度下Ga的自补偿效应导致载流子浓度下降．     

SBS激光器实验研究

YAG棒激光器的热效应可引起波前畸变，利用受激布里渊散射(SBS)相位共轭镜(PCM)能补偿这些畸变。实验研究SBS对激光棒热效应的影响。通过SBS振荡腔的新颖设计，在抽运能量为17J，重复频率为5Hz时，得到稳定输出的能量为19mJ、脉宽为10．7ns的高质量激光脉冲。     

Hybrid cascode feedforward compensation for nano-scale low-power ultra-area-efficient three-stage amplifiers

A modified frequency compensation technique is proposed for low-power area-efficient three-stage amplifiers driving medium to large capacitive loads. Coined hybrid cascode feedforward compensation (HCFC), the total compensation capacitor is divided and shared between two internal high-speed feedback loops instead of only one loop as is common in prior art. Detailed analysis of this technique shows significant improvement in terms of bandwidth and stability. This is verified for a 1.2-V amplifier driving a 500-pF capacitive load in 90-nm CMOS technology, where HCFC reduces the total capacitor size and improves the gain-bandwidth by at least 30% and 40% respectively, compared to the prevailing schemes.     

电注入退火条件对铸造单晶硅PERC电池抗LID效应影响的研究

铸造单晶硅太阳电池由于性价比高,在晶硅太阳能市场占有越来越重要的地位。文章以B和Ga共掺杂的铸造单晶硅钝化发射和背面(PERC)电池为研究对象,采用现有工业生产的电注入退火方法,分别进行了260和180℃温度下的不同电注入条件退火处理和随后的光致衰减(LID)效应分析。分析表明:经180℃的电注入退火处理,电池效率的变化率为-0.64%,经60kW·h的光照后,电池效率比退火前降低了2.79%。而经过260℃的电注入退火处理后,电池效率提高1.12%,且经60kW·h的光照后,电池效率比退火前仅下降1.96%。这些结果说明,260℃的电注入退火条件更适用于铸造单晶硅电池的抗LID处理。