Thermodynamic and Transport Properties of Liquid HFC-227ea

The thermal conductivity and heat capacity of liquid 1,1,1,2,3,3,3-hepta-fluoropropane (HFC-227ea) have been studied by a high-frequency thermal-wave method over the temperature range of 294 to 345 K at pressures up to 2.8 MPa. The purity of the samples used throughout the measurements is 99.99 mol%. The experimental uncertainties of the thermal conductivity and heat capacity measurements were estimated to be within ±1.5 and ±2%, respectively. The thermal conductivity of HFC-227ea in the liquid phase decreases as temperature increases, while the pressure has an opposite effect.     

CFH-Ⅱ型翻车机传动齿轮轴承座的座脚螺栓联接失效分析与改进

分析了CFH-Ⅱ型翻车机传动齿轮轴承座的座脚螺栓组联接失效(松动)的原因，得出控制和保证合适的螺栓组联接预紧力是防止螺栓联接失效(松动)的关键；依据现场条件，对座脚螺栓进行了设计改进；提出了一种适合现场使用的螺栓预热伸长的装配方法，经实践验证此法是简单可靠的装配方法。     

Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes

The effect of a thin RuO_x layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuO_x/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuO_x/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no formation of a thin RuO_x layer at the RuO_x surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film by pre-annealing leads to the formation of a thin RuO_x layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity of diffusion paths. In particular, the RuO_x layer in a nonstoichiometric state is changed to the RuO₂-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer. Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the RuO_x/TiN/poly-Si/Si contact system.     

Investigation into polishing process of CVD diamond films

A new technique used for polishing chemical vapor deposition (CVD) diamond films has been investigated, by which rough polishing of the CVD diamond films can be achieved efficiently. A CVD diamond film is coated with a thin layer of electrically conductive material in advance, and then electro-discharge machining (EDM) is used to machine the coated surface. As a result, peaks on the surface of the diamond film are removed rapidly. During machining, graphitization of diamond enables the EDM process to continue. The single pulse discharge shows that the material of the coated layer evidently affects removal behavior of the CVD diamond films. Compared with the machining of ordinary metal materials, the process of EDM CVD diamond films possesses a quite different characteristic. The removal mechanism of the CVD diamond films is discussed.     

激光抛光技术的发展与展望

介绍激光抛光技术的发展历史,阐明激光抛光的应用现状及未来的发展前景,论述了激光抛光的工艺特点和作用机理,将激光抛光技术与其它抛光技术进行了全面的对比,指出激光抛光的优势及其存在的问题。     

回热损失对磁斯特林制冷循环制冷率的影响

从铁磁质的磁化强度一般表示式出发，探讨热阻和回热损失对磁斯特林制冷循环性能的影响，导出最大制冷率及其它性能参数。得到了结果适用于以顺磁质为工质的磁斯特林制冷循环。并指出在理想回热条件下的结论也适用于磁卡诺制冷循环。     

含混合金属的羟基镍铝交联蒙托石的合成

用两种方法——取代法和共聚法合成了一系列羟基镍铝交联蒙托石(GNiAl-CLM和NiAl-CLM),首次利用两种方法,交联前和交联后高温老化处理,对交联蒙托石的热稳定性进行改进。结果表明:取代法合成的羟基镍铝交联蒙托石具有均一的(001)面衍射,底面间距d(001)值均为1.8nm左右,而共聚法合成的羟基镍铝交联蒙托石出现两个(001)面衍射,d(001)值分别为1.8nm和1.55nm;高温处理后,热稳定性得到明显改进,热稳定性可高达700℃以上。     

烧结NdFeB合金中的夹杂物

使用金相显微镜、扫描电镜及Ｘ射线能谱和波谱观察并分析了ＮｄＦｅＢ烧结材料中夹杂物的形态、数量和组成。磁粉制备后立即烧结的ＮｄＦｅＢ磁体中的夹杂物是氧化钕；而在不同环境条件下放置后的ＮｄＦｅＢ粉再烧结的材料中发现，除了氧化钕的夹杂物外，还有钕的氮化物及钕的氮氧复合夹杂物。同时还论讨了这些夹杂物对于ＮｄＦｅＢ材料磁性能的影响。     

泡沫夹克管的防水与保温

针对辽河油田应用泡沫夹克管道的情况，从泡沫夹克管的制作和敷设施工直到设计等环节，结合泡沫夹克管防腐保温的机理，并从理论与实践相结合角度出发，提出导致泡沫夹克管腐蚀损坏的最主要原因是管道保温层漏水，进而提出了在设计和施工过程中提高泡沫夹克管质量的措施。     

烧结工艺对液相合成（SrPb）TiO3基陶瓷热敏特性影响的研究

本文在液相合成（ＳｒＰｂ）ＴｉＯ３粉的基础上，研究了升温速率、保温时间、烧结温度及降温方式对（ＳｒＰｂ）ＴｉＯ３基陶瓷的Ｖ型ＰＴＣ热敏特性的影响。实验表明：升温速率对其热敏特性影响不大，保温时间和烧结温度的作用是一致的，具有一最佳范围。而降浊方式对材料的热敏特性影响较大。综合各因素的影响，本配方中，样品的烧结制度定为：以２００℃／ｈ的速率升温，在１２５０℃保温１ｈ，炉冷至９５０℃，保温０．５ｈ，再