首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   86242篇
  免费   10350篇
  国内免费   4817篇
电工技术   4891篇
综合类   6188篇
化学工业   23511篇
金属工艺   9635篇
机械仪表   3613篇
建筑科学   6649篇
矿业工程   1636篇
能源动力   4690篇
轻工业   7655篇
水利工程   901篇
石油天然气   4113篇
武器工业   1308篇
无线电   5775篇
一般工业技术   13154篇
冶金工业   4615篇
原子能技术   922篇
自动化技术   2153篇
  2024年   1500篇
  2023年   1662篇
  2022年   2570篇
  2021年   3079篇
  2020年   3190篇
  2019年   2818篇
  2018年   2766篇
  2017年   3415篇
  2016年   3461篇
  2015年   3635篇
  2014年   4769篇
  2013年   5161篇
  2012年   5909篇
  2011年   6157篇
  2010年   4644篇
  2009年   4860篇
  2008年   4015篇
  2007年   5470篇
  2006年   5186篇
  2005年   4302篇
  2004年   3656篇
  2003年   3068篇
  2002年   2762篇
  2001年   2302篇
  2000年   1994篇
  1999年   1681篇
  1998年   1430篇
  1997年   1162篇
  1996年   1006篇
  1995年   778篇
  1994年   644篇
  1993年   464篇
  1992年   452篇
  1991年   346篇
  1990年   243篇
  1989年   202篇
  1988年   149篇
  1987年   86篇
  1986年   74篇
  1985年   73篇
  1984年   63篇
  1983年   49篇
  1982年   50篇
  1981年   32篇
  1980年   23篇
  1979年   9篇
  1975年   5篇
  1973年   3篇
  1959年   11篇
  1951年   10篇
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
971.
刘恒  张学新  陈正江 《通信技术》2014,(9):1104-1108
本文结合通信电子设备工程实际,阐述了基于Icepak的通信电子设备热设计及优化的过程,探索了一种仿真计算与优化验证的热设计方法。文中通过初步计算选择合理的散热方式及确定散热布局,并详细介绍了利用Icepak软件对散热布局进行仿真计算的过程和散热器的参数化及优化设计过程。这种基于Icepak的热设计方法能明显提高设计效率,解决工程实际问题,对于通信电子设备的热设计具有参考意义。  相似文献   
972.
The effect of drain-source voltage on A1GaAs/InGaAs PHEMTs thermal resistance is studied by experimental measuring and simulation. The result shows that A1GaAs/InGaAs PHEMTs thermal resistance presents a downward trend under the same power dissipation when the drain-source voltage (VDs) is decreased. Moreover, the relatively low VDS and large drain-source current (IDs) result in a lower thermal resistance. The chip-level and package-level thermal resistance have been extracted by the structure function method. The simulation result indicated that the high electric field occurs at the gate contact where the temperature rise occurs. A relatively low VDS leads to a relatively low electric field, which leads to the decline of the thermal resistance.  相似文献   
973.
采用铸造法制备原位自生亚共晶Al-10Mg2Si复合材料,研究Cu和T6热处理对该复合材料组织与力学性能的影响。结果表明:适量Cu的添加能显著减小共晶Mg2Si相晶粒尺寸,使其晶体结构由粗大的长条状和汉字状转变为细小的条状和纤维状;同时使针状的β-Al5Fe Si相转变为细小的不规则富Cu颗粒。经T6热处理后,质量分数为1.5%的Cu复合材料中的共晶Mg2Si相完全球化。质量分数为1.5%的Cu添加同时提高了材料铸态下的抗拉强度(Rm)、屈服强度(Rp0.2)和伸长率(A),达317、169 MPa和2.3%,比未添加Cu提高了42.2%、24.3%和53.3%;经T6热处理的Rm和Rp0.2值分别增至332、181 MPa,而A值保持不变。同时,材料由脆性断裂完全转变为韧性断裂。  相似文献   
974.
LiCoO2 is a prime example of widely used cathodes that suffer from the structural/thermal instability issues that lead to the release of their lattice oxygen under nonequilibrium conditions and safety concerns in Li‐ion batteries. Here, it is shown that an atomically thin layer of reduced graphene oxide can suppress oxygen release from LixCoO2 particles and improve their structural stability. Electrochemical cycling, differential electrochemical mass spectroscopy, differential scanning calorimetry, and in situ heating transmission electron microscopy are performed to characterize the effectiveness of the graphene‐coating on the abusive tolerance of LixCoO2. Electrochemical cycling mass spectroscopy results suggest that oxygen release is hindered at high cutoff voltage cycling when the cathode is coated with reduced graphene oxide. Thermal analysis, in situ heating transmission electron microscopy, and electron energy loss spectroscopy results show that the reduction of Co species from the graphene‐coated samples is delayed when compared with bare cathodes. Finally, density functional theory and ab initio molecular dynamics calculations show that the rGO layers could suppress O2 formation more effectively due to the strong C? Ocathode bond formation at the interface of rGO/LCO where low coordination oxygens exist. This investigation uncovers a reliable approach for hindering the oxygen release reaction and improving the thermal stability of battery cathodes.  相似文献   
975.
A highly reliable conductive adhesive obtained by transient liquid‐phase sintering (TLPS) technologies is studied for use in high‐power device packaging. TLPS involves the low‐temperature reaction of a low‐melting metal or alloy with a high‐melting metal or alloy to form a reacted metal matrix. For a TLPS material (consisting of Ag‐coated Cu, a Sn96.5‐Ag3.0‐Cu0.5 solder, and a volatile fluxing resin) used herein, the melting temperature of the metal matrix exceeds the bonding temperature. After bonding of the TLPS material, a unique melting peak of TLPS is observed at 356 °C, consistent with the transient behavior of Ag3Sn + Cu6Sn5 → liquid + Cu3Sn reported by the National Institute of Standards and Technology. The TLPS material shows superior thermal conductivity as compared with other commercially available Ag pastes under the same specimen preparation conditions. In conclusion, the TLPS material can be a promising candidate for a highly reliable conductive adhesive in power device packaging because remelting of the SAC305 solder, which is widely used in conventional power modules, is not observed.  相似文献   
976.
The shear strength behavior and microstructural effects after aging for 100 h and 1,000 h at 150°C are reported for near-eutectic Sn-Ag-Cu (SAC) solder joints (joining to Cu) made from Sn-3.5Ag (wt.%) and a set of SAC alloys (including Co- and Fe-modified SAC alloys). All joints in the as-soldered and 100-h aged condition experienced shear failure in a ductile manner by either uniform shear of the solder matrix (in the strongest solders) or by a more localized shear of the solder matrix adjacent to the Cu6Sn5 interfacial layer, consistent with other observations. After 1,000 h of aging, a level of embrittlement of the Cu3Sn/Cu interface can be detected in some solder joints made with all of the SAC alloys and with Sn-3.5Ag, which can lead to partial debonding during shear testing. However, only ductile failure was observed in all solder joints made from the Co- and Fe-modified SAC alloys after aging for 1,000 h. Thus, the strategy of modifying a strong (high Cu content) SAC solder alloy with a substitutional alloy addition for Cu seems to be effective for producing a solder joint that retains both strength and ductility for extended isothermal aging at high temperatures.  相似文献   
977.
分别采用物理气相沉积和溶胶-凝胶技术在K9基片上镀制了4块光学厚度相近的SiO2和ZrO2单层膜.分别采用椭偏仪、透射式光热透镜和原子力显微镜对两类薄膜的孔隙率、热吸收和微观表面形貌进行了表征;利用Nd:YAG激光器测试了样品的激光损伤阈值(LIDT;1064 nm/8.1 ns),并用光学显微镜观察了两类薄膜的损伤形...  相似文献   
978.
一种通过改变激光功率密度分布控制熔覆层裂纹的方法   总被引:2,自引:0,他引:2  
为了降低激光熔覆过程中熔覆层热应力从而减少裂纹的生成,提出了一种通过改变激光功率密度分布来控制熔覆层裂纹的方法,并用数值模拟的方法对均布及凸字形光斑熔覆过程进行了热力耦合有限元分析。结果表明,用均布光斑熔覆呈现出激光加工典型的快速加热、快速冷却特征,而采用凸字形光斑可在一定程度上起到预热、缓冷的效果,从而降低了熔覆区与非熔覆区的温度梯度,另外,在熔覆效果相当的前提下,其熔覆层热应力也较小,因而可以有效地减小熔覆层的开裂趋势。  相似文献   
979.
We report on conductivity and optical property of three different types of poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) films [pristine PH1000 film (PH1000-p), with 5 wt.% ethylene glycol additive (PH1000-EG) and with sulfuric acid post-treatment (PH1000-SA)] before and after polyethylenimine (PEI) treatment. The PEI is found to decrease the conductivity of all the PEDOT:PSS films. The processing solvent of 2-methoxyethanol is found to significantly enhance the conductivity of PH1000-p from 1.1 up to 744 S/cm while the processing solvent of isopropanol or water does not change the conductivity of PH1000-p much. As for the optical properties, the PEI treatment slightly changes the transmittance and reflectance of PH1000-p and PH1000-EG films, while the PEI leads to an substantial increase of the absorptance in the spectral region of 400–1100 nm of the PH1000-SA films. Though the optical property and conductivity of the three different types of PEDOT:PSS films vary with the PEI treatment, the treated PEDOT:PSS films exhibit similar low work function. We demonstrate solar cells with a simple device structure of glass/low-WF PEDOT:PSS/P3HT:ICBA/high-WF PEDOT:PSS cells that exhibit good performance with open-circuit voltage of 0.82 V and fill factor up to 0.62 under 100 mW/cm2 white light illumination.  相似文献   
980.
磁控反应溅射SnO2薄膜的气敏特性研究   总被引:3,自引:0,他引:3  
为研究SnO2薄膜的气敏特性,采用直流磁控反应溅射法制备了SnO2薄膜。探讨和分析了SnO2薄膜气敏元件的敏感机理。对SnO2薄膜的电阻和灵敏度的测试以及对实验结果的分析表明:SnO2薄膜厚度在150~400nm为宜,一般膜厚在250nm时较为敏感。在SnO2薄膜中掺入Pd、Pt、Ag等微量杂质可大大提高SnO2薄膜气敏元件的灵敏度,且使灵敏度的峰值向低温方向移动,增强了对H2、CO和C2H5OH等可燃气体的选择性、响应时间由3min缩短到0.5s以下。  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号