一种基于感光干膜-铟锡氧化物电极的简易细胞阻抗传感器实现细胞形态学和阻抗信息同时检测

加工一种基于感光干膜-铟锡氧化物DFP-ITO( Dry Film Photoresist-Indium Tin Oxide)电极的细胞阻抗生物传感器并实现细胞形态学和阻抗信息同时检测。35μm厚的感光干膜层压在ITO导电玻璃表面上作为绝缘层,通过照相制版技术在感光干膜绝缘层上蚀刻不同直径圆孔;以DFP-ITO作为工作电极,通过夹具和测量小池与Ag/AgCl参比电极、Pt丝对电极相连构成三电极阻抗测量系统;考察了不同直径DFP-ITO工作电极阻抗谱特征;通过细胞粘附实验及细胞毒性实验考察了感光干膜细胞生物相容性;通过光学显微镜和阻抗谱技术分别对接种在DFP-ITO电极上人肺癌细胞株A549粘附、增殖过程中的形
　　态学和阻抗信息进行检测和分析。研究结果发现不同直径DFP-ITO电极具有相似的阻抗特性;充分固化的感光干膜表面适宜A549细胞粘附且无明显的细胞毒性;基于DFP-ITO电极构建的细胞阻抗传感器能够通过光学显微镜获取A549细胞形态学数据,同时通过阻抗谱技术能够解析A549细胞粘附、增殖过程中的细胞质膜电容、细胞-细胞间隙电阻、细胞-ITO电极间隙电阻变化。本文发展了基于DEP-ITO电极的细胞阻抗传感器结构简单,可实现细胞形态学和阻抗信息的双通道获取,未来可用于细胞生理病理学行为和药物细胞毒性研究。     

Highly conducting indium tin oxide (ITO) thin films deposited by pulsed laser ablation

Highly conducting and transparent indium tin oxide (ITO) thin films were prepared on SiO₂ glass and silicon substrates by pulsed laser ablation (PLA) from a 90 wt.% In₂O₃-10 wt.% SnO₂ sintered ceramic target. The growths of ITO films under different oxygen pressures (P_O2) ranging from 1×10⁻⁴–5×10⁻² Torr at low substrate temperatures (T_s) between room temperature (RT) and 200°C were investigated. The opto-electrical properties of the films were found to be strongly dependent on the P_O2 during the film deposition. Under a P_O2 of 1×10⁻² Torr, ITO films with low resistivity of 5.35×10⁻⁴ and 1.75×10⁻⁴ Ω cm were obtained at RT (25°C) and 200°C, respectively. The films exhibited high carrier density and reasonably high Hall mobility at the optimal P_O2 region of 1×10⁻² to 1.5×10⁻² Torr. Optical transmittance in excess of 87% in the visible region of the solar spectrum was displayed by the films deposited at Po₂≥1×10⁻² Torr and it was significantly reduced as the P_O2 decreases.     

微乳液法纳米SnO2材料的合成、结构与气敏性能

本文研究了由阴离子表面活性剂组成的微乳液在纳米ＳｎＯ２气敏材料合成中的应用,研究了阴离子表面活性剂类型及肋表面活性对纳米ＳｎＯ２材料平均晶粒度的影响。     

武钢镀锡板如何实现专业化生产与规模化效益

根据国内镀锡板市场需求与其工艺技术发展的客观分析,结合武钢镀锡板的生产现状与宝钢镀锡板发展的成功之路,探讨武钢镀锡板如何实现专业化生产和规模化效益。     

Effect of Sm on Gas-Sensing Properties of SnO2 with Different Oxygen Vacancy Concentrations

In recent years, chemical modification ofsuffice has been widely used to improve gas.sensing property of SnOZ ...,..[1]. There aremany researches on chemical surface modification by rare earth .l....t,[2'3]. The deviationof oxygen from stoichiometric can be adjustedby process conditions, especially the temperature and atmosphere during SnOZ-- x preparation. The x value in SnOZ -- x presents the concentration of oxygen vacancy in SnO2. Theoxygen vacancy can form the donor level andaffect t…     

银铜锌锡合金中银铜锡的联合测定

用浓硫酸和浓硝酸溶样,分别用硫氰酸盐滴定法、碘量法和络合滴定法测定银、铜和锡。实现了银、铜、锡的联合测定。     

Nanostructured Silicon Matrix for Materials Engineering

Tin-containing layers with different degrees of oxidation are uniformly distributed along the length of silicon nanowires formed by a top-down method by applying metalorganic chemical vapor deposition. The electronic and atomic structure of the obtained layers is investigated by applying nondestructive surface-sensitive X-ray absorption near edge spectroscopy using synchrotron radiation. The results demonstrated, for the first time, a distribution effect of the tin-containing phases in the nanostructured silicon matrix compared to the results obtained for planar structures at the same deposition temperatures. The amount and distribution of tin-containing phases can be effectively varied and controlled by adjusting the geometric parameters (pore diameter and length) of the initial matrix of nanostructured silicon. Due to the occurrence of intense interactions between precursor molecules and decomposition by-products in the nanocapillary, as a consequence of random thermal motion of molecules in the nanocapillary, which leads to additional kinetic energy and formation of reducing agents, resulting in effective reduction of tin-based compounds to a metallic tin state for molecules with the highest penetration depth in the nanostructured silicon matrix. This effect will enable clear control of the phase distributions of functional materials in 3D matrices for a wide range of applications.     

Study of the substrate treatment effect on initial growth of indium tin-oxide films on polymer substrate using in situ conductance measurement

Changes in the initial growth mode of ion beam sputtered indium tin oxide (ITO) films on polycarbonate (PC) substrates were investigated by an in situ measurement of electrical conductance. The PC substrates were irradiated with l keV Ar ions in an oxygen environment (ion assisted reaction: IAR), prior to the film deposition for changing the surface energy. The electrical conduction modes in ITO films were discussed in terms of the film thickness and the surface energy of PC substrates. It was found that, in the initial part of the film growth, ITO nucleation density increased with the increase of the surface energy of PC. The change of the growth mode was discussed in both viewpoints of thermodynamics and atomic kinetics theories and verified by AFM (atomic force microscope) observations. Thermal stability of ITO films was investigated to observe the effect of the growth mode change by IAR pre-treatment of polymer substrate.     

Low-temperature processing of transparent conductive indium tin oxide nanocomposites using polyvinyl derivatives

We report on the influence of additives on the electrical, optical, morphological and mechanical properties of transparent conductive indium tin oxide (In₂O₃:Sn; ITO) nanoparticle films by the use of polymers as matrix material. Key issues to fabricate layers suitable for use in electronic device applications are presented. Polyvinyl derivatives polyvinyl acetate, polyvinyl alcohol (PVA) and polyvinyl butyral were applied and their suitability to form transparent conductive ITO nanocomposite coatings at a maximum process temperature of 130 °C was investigated. A low-temperature treatment with UV-light has been developed to provide the possibility of curing ITO thin films deposited on substrates which do not withstand high process temperatures. Compared to best pure ITO layers (0.2 Ω^− 1 cm^− 1), the ITO-PVA nanocomposite coatings show a conductance value of 4.1 Ω^− 1 cm^− 1 and 5.9 Ω^− 1 cm^− 1 after reducing in forming gas. Sheet resistance of ca. 1200 Ω/□ with coexistent transmittance of 85% at 550 nm for a layer thickness of about 1.45 μm was achieved. The conductance enhancement is a consequence of nanoparticulate ITO network densification due to the acting shrinkage forces caused by the polymer matrix during film drying and additionally UV-induced crosslinking of PVA.     

The role of transparent conducting oxides in metal organic chemical vapour deposition of CdTe/CdS Photovoltaic solar cells

A systematic study is made between the relationship of Cd_0.9Zn_0.1S/CdTe photovoltaic (PV) device properties for three different commercial transparent conducting oxide (TCO) materials and some experimental CdO to determine the role of the TCO in device performance. The resistance contribution from the TCO was measured after depositing the gold contact architectures directly onto the TCOs. These were compared with the Cd_0.9Zn_0.1S/CdTe device properties using the same contact arrangements. Series resistance for the commercial TCOs correlated with their sheet resistance and gave good agreement with the PV device series resistance for the indium tin oxide (ITO) and fluorine doped tin oxide (FTO) 15 Ω/Sq. superstrates. The devices on the thicker FTO 7 Ω/sq superstrates were dominated by a low shunt resistance, which was attributed to the rough surface morphology causing micro-shorts. The device layers on the CdO substrate delaminated but devices were successfully made for ultra-thin CdTe (0.8 μm thick) and compared favourably with the comparable device on ITO. From the measurements on these TCOs it was possible to deduce the back contact resistance and gave an average value of 2 Ω.cm². The correlation of fill factor with series resistance has been compared with the predictions of a 1-D device model and shows excellent agreement. For high efficiency devices the combined series resistance from the TCO and back contact need to be less than 1 Ω.cm².