电子陶瓷和器件的低温共烧技术

较系统地介绍了电子器件用低温共烧陶瓷(low temperature cofired ceramics,LTCCs)材料,探讨了其工艺中的若干问题。电子器件用低温共烧陶瓷材料包括:玻璃/陶瓷复合材料、结晶化玻璃、晶化玻璃/陶瓷复合材料以及液相烧结陶瓷,其中典型的和最为常用的LTCCs为玻璃/陶瓷(特别是氧化铝)复合材料。正在研究的一些陶瓷介质材料中,Bi基介质材料引起了人们的关注。玻璃/陶瓷复合材料的制备工艺中,应当着重关注和加深了解玻璃的流动性和结晶性、玻璃的起泡、玻璃和陶瓷颗粒间的反应、共烧材料的匹配等问题,从优选材料配方和优化工艺着手,从而获得优质可靠的材质和器件。     

Pore structure of bulk tungsten carbide powder catalysts

Bulk tungsten carbide catalysts are prepared by direct carburization/reduction of tungsten trioxide in methane-hydrogen mixtures. The catalytic properties of such catalysts have been studied by several authors. The porous structure of these catalysts is studied by adsorption of N₂, Kr, CF₄ and neohexane. Adsorption isotherms and hysteresis loops for the catalysts suggest the presence of a microporous structure made of parallel plates distant approximately by 20 Å. These results are compared to those obtained using such catalysts for hydrogen oxidation and where condensation in the porous structure was observed.     

Molten salts/ceramic-foam matrix composites by melt infiltration method as energy storage material

A new type of high temperature energy storage material was obtained through the melt infiltration method, using compounding SiC ceramic foam as matrix and Na₂SO₄ as phase change material. The resulting composite material was measured by XRD, SEM, TG-DSC methods. The experimental results indicate that the composite is composed of silicon carbide, sodium sulfate and square quartz, and no chemical reactions occurs between Na₂SO₄ and SiC matrix. Na₂SO₄ has a good bonding with the SiC ceramic foam matrix. As the composite material is characterized by high thermal energy storage density and high thermal conductivity, it is suit for energy storage under high temperature. Funded by the “863” Hi-Tech Research and Development Program of China (2008AA05Z418)     

铝电解槽添加锂镁盐工业试验研究

本文论述了在20kA侧插自熔铝电解槽中添加锂盐、镁盐及锂镁盐复合剂的试验过程和技术经济效果。认为在铝电解槽中添加上述盐类在技术上是可行的,在经济上是有利的。对提高铝电解槽的电流效率和降低直流电单耗具有显著作用。     

Intergranular oxidation of silicon in 20Cr-25Ni niobium-stabilized stainless steel at 1140–1230 K

The kinetics of intergranular oxidation of silicon in a 20Cr-25Ni Nb-stabilized stainless steel are reported, at temperatures in the range 1140–1230 K, in CO₂ at 40 bar pressure. The depth of attack increased parabolically with respect to time, with an activation energy of 335±30 kJ/mol. The mechanism of growth is discussed in terms of classical internal-oxidation theories, and an alternative explanation based on an available-space theory is developed. The internal oxidation rates in a number of different alloys are compared with diffusivities of metals in the base alloy. It is proposed that intergranular oxidation in the 20–25 Nb steel is controlled by the rate of outward diffusion of iron or chromium in the alloy.     

Evolution of insoluble eutectic Si particles in anodic oxidation films during adipic-sulfuric acid anodizing processes of ZL114A aluminum alloys

The effects of insoluble eutectic Si particles on the growth of anodic oxide films on ZL114A aluminum alloy substrates were in-vestigated by optical microscopy (OM) and scanning electron microscopy (SE...     

Recent progress of CERN RD50 Collaboration

The objective of the CERN RD50 Collaboration is to develop radiation hard semiconductor detectors for very high luminosity colliders, in particular, for the upgrade of the large hadron collider （LHC） which itself is scheduled to be operational in 2007. The approach of the RD50 has two major research lines, material engineering and device engineering. These are further subdivided into projects covering defect characterization and engineering, new detector materials, detector characterization, new detector structures and full detector systems. Presently, 264 members from 53 institutes are actively participating in the RD50 Collaboration. Detectors made of defect engineered substrates, e.g. high resistivity magnetic Czochralski （MCz-Si）, epitaxial silicon （Epi-Si） on Czochralski silicon （Cz-Si） substrate, intentionally thermal donor （TD） compensated p-type MCz-Si and oxygen enriched （DOFZ） silicon, have been demonstrated by the RD50 Collaboration. An overview and highlights of the results of these defect engineering techniques were given in this report.     

High-temperature oxidation of pure titanium in CO2 and Ar-10%CO2 atmospheres

The oxidation behavior of pure titanium has been investigated in the temperature range of 1000 K to 1300 K in CO₂ or Ar-10%CO₂. Optical microscopy, electron probe microanalyses, and X-ray measurements on the oxide scales formed during oxidation indicate that their structures are nearly independent of temperature and the corrosion atmosphere. The scales consisted of two layers, an external one and an internal one, having a rutile (TiO₂) structure. The parabolic rate law was confirmed for growth of the external scale and the permeation depth of oxygen in titanium with apparent activation energies of 266 and 226 kJ/mol, respectively. The rate-determining diffusion species in the oxidation processes are discussed.     

Experimental investigations of machining characteristics and removal mechanisms of advanced ceramics in high speed deep grinding

Machining characteristics and surface integrity of advanced ceramics, including alumina, alumina–titania, and yttria partially stabilized tetragonal zirconia, were studied under high speed deep grinding conditions. Material removal mechanisms involved in the grinding processes were explored. The material removal in the grinding of alumina and alumina–titania was dominated by grain dislodgement or lateral cracking along grain boundaries. The removal for zirconia was via both local micro fracture and ductile cutting. It was found that under a feed rate of 500 mm/min and for all the wheel speeds used, an increase in the wheel depth of cut (DOC) from 0.1–2 mm slightly improved the ground surface finish, but greatly prolonged the wheel life. This increase did not deepen the subsurface damage layer for the alumina and alumina–titania, but resulted in a slightly deeper damage layer for the zirconia.     

用双层辉光等离子法在钛表面制备的Ti-Pd合金层性能研究

采用双层辉光等离子冶金技术在纯钛表面制备了Ti—Pd合金层。其深度大约为90μm，Pd含量呈梯度变化，并出现了TiPd3，TiPd2，Ti2Pd3，Ti3Pd5，TiPd，Ti4Pd等6种化合物相和Pd相。合金层在100℃的NaCl饱和溶液＋HCl溶液以及40℃的8．6％H2SO4溶液中的耐缝隙腐蚀性能优于Ti0．2Pd合金；在室温80％H2SO4的溶液中，腐蚀速率仅为0．682mm／a，是Ti0．2Pd合金的18．2％：在室温30％HCl的溶液中，表面Ti—Pd的腐蚀速率仅为0．004mm／a，是Ti0．2Pd合金的12．5％。